Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.

Download or read book Quantum Well Intersubband Transition Physics and Devices written by Hui C. Liu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer. This book was released on 1998-07-31 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. This reference work is based on the International Workshop that was held at National Cheng Kung University in Tainan, Taiwan in December 15-18, 1997. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 mum). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covering most aspects of the intersubband transition phenomena including: the basic intersubband transition process, multiquantum well infrared photodetector (QWIP) physics, large format (640×480) GaAs QWIP (with 9.0 mum cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long-wavelength quantum cascade (QC) lasers such as short (lambda = 3.4 mum) and long (lambda = 11.5 mum) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15.5 mum wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. Intersubband Transitions in Quantum Wells: Physics and Devices will be of interest to researchers from universities and industrial laboratories working on physics and devices of nanostructures, and researchers in the infrared (IR) community.

Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Download or read book Intersubband Transitions in Quantum Well Infrared Photodetector written by Chin Wei Cheah and published by . This book was released on 2001 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Download or read book The Physics of Quantum Well Infrared Photodetectors written by K. K. Choi and published by World Scientific. This book was released on 1997 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared managing.

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-25 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband Transitions in Quantum Wells: Physics and Device Applications II

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications written by and published by Academic Press. This book was released on 1999-10-28 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Download or read book Intersubband Infrared Photodetectors written by V. Ryzhii and published by World Scientific. This book was released on 2003 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.

Download or read book Intersubband Transitions in Quantum Wells Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-27 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.

Download or read book Investigation of Multicolor and Simplified Quantum Well Infrared Photodetectors for MWIR and LWIR Detection written by and published by . This book was released on 2000 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research program, we have investigated a four-stack, four-color quantum well infrared photodetector (QWIP), and studied the voltage distribution and temperature effect in this four-color QWIP. We have conducted a study on the quantum confined Stark-effect in an n-type QWIP. We have performed theoretical studies of the intersubband optical transitions in quantum dots and the design of GaAs/InGaAs and InAs/InAlAs quantum dot infrared photodetectors (QDIPs) for MWIR and LWIR detection. A new QWIP for very long wavelength infrared (VLWIR) applications has been investigated for 14-16 (micrometer) detection. Specific issues concerning device physics, detector design and device performance of the VLWIR QWIP are addressed. A VLWIR QWIP has been designed, fabricated and characterized. Two high performance multi-color, broadband QWIPs using digital graded superlattice barriers (DGSLB) for long wavelength infrared (LWIR) and broadband (BB) infrared detection have been demonstrated. We have also developed a high performance broadband (BB) In(0.26) Ga(0.74) As/Al(x) Ga(1-x)As QWIP using a linearly graded (LGB) Al(x) Ga(1-x) As barrier for LWIR detection. Theoretical study on the enhancement of quantum efficiency in a QWIP by using photonic crystal structure has also been carried out in this report.

Download or read book Physics of Photonic Devices written by Shun Lien Chuang and published by John Wiley & Sons. This book was released on 2012-11-07 with total page 842 pages. Available in PDF, EPUB and Kindle. Book excerpt: The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as: surface plasmonics and micro-ring resonators; the theory of optical gain and absorption in quantum dots and quantum wires and their applications in semiconductor lasers; and novel microcavity and photonic crystal lasers, quantum-cascade lasers, and GaN blue-green lasers within the context of advanced semiconductor lasers. Physics of Photonic Devices, Second Edition presents novel information that is not yet available in book form elsewhere. Many problem sets have been updated, the answers to which are available in an all-new Solutions Manual for instructors. Comprehensive, timely, and practical, Physics of Photonic Devices is an invaluable textbook for advanced undergraduate and graduate courses in photonics and an indispensable tool for researchers working in this rapidly growing field.

Download or read book Semiconducting Chalcogenide Glass II written by Robert Fairman and published by Elsevier. This book was released on 2004-12-17 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. The properties of chalcogenide glass result not only from their chemical composition and atomic structure, but also from the impact of numerous external factors. A comprehensive survey is presented of the properties of chalcogenide glass under various external impacts. Practical recommendations are presented for a wide range of applications. Part II is the second part of a three-volume work within the Semiconductors and Semimetals series. * The first collective monograph written by Eastern European scientists on the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).* Contributions by B.G. Kolomiets, who discovered the properties of chalcogenide glass in 1955!* Provides objective evidence and discussion by authors from opposing positions.

Download or read book Semiconducting Chalcogenide Glass III written by Robert Fairman and published by Elsevier. This book was released on 2004-12-17 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. Semiconducting Chalcogenide Glass III: Applications of Chalcogenide Glasses is a comprehensive overview of designs of various chalcogenide glass devices are presented, including switches, phase inverters, voltage stabilizers, oscillators, indicators and display control circuits, memory devices, and sensors. A special chapter is devoted to chalcogenide glass applications in optical fibers. This collective monograph is intended to survey the current state of chalcogenide glass applications to facilitate further development. The first collective monograph written by Eastern European scientists covering electrical and optical properties of chalcogenide vitreous semiconductors (CVS) Contributions by B.G. Kolomiets, who discovered the properties of chalcogenide glass in 1955! Provides evidence and discussion by authors from opposing positions

Download or read book Mid infrared Semiconductor Optoelectronics written by Anthony Krier and published by Springer. This book was released on 2007-05-22 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.