Download or read book Intersubband Quantum Dots in a well Infrared Photodetectors written by Sunil Raghavan and published by . This book was released on 2003 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.

Download or read book Intersubband Infrared Photodetectors written by Victor Ryzhii and published by World Scientific. This book was released on 2003-06-25 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.

Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer. This book was released on 1998-07-31 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. This reference work is based on the International Workshop that was held at National Cheng Kung University in Tainan, Taiwan in December 15-18, 1997. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 mum). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covering most aspects of the intersubband transition phenomena including: the basic intersubband transition process, multiquantum well infrared photodetector (QWIP) physics, large format (640×480) GaAs QWIP (with 9.0 mum cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long-wavelength quantum cascade (QC) lasers such as short (lambda = 3.4 mum) and long (lambda = 11.5 mum) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15.5 mum wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. Intersubband Transitions in Quantum Wells: Physics and Devices will be of interest to researchers from universities and industrial laboratories working on physics and devices of nanostructures, and researchers in the infrared (IR) community.

Download or read book Intersubband Infrared Photodetectors written by V. Ryzhii and published by World Scientific. This book was released on 2003 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.

Download or read book Physics of Quantum Well and Quantum Dot Infrared Photodetectors written by V. Ryzhii and published by . This book was released on 2000 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the recent studies of physical effects in quantum well and quantum dot infrared photodetectors utilizing intersubband transitions.

Download or read book Intersubband Transitions In Quantum Structures written by Roberto Paiella and published by McGraw Hill Professional. This book was released on 2010-05-05 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.

Download or read book Structural Optical and Spectral Behaviour of InAs based Quantum Dot Heterostructures written by Saumya Sengupta and published by Springer. This book was released on 2017-08-04 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.

Download or read book The Physics Of Quantum Well Infrared Photodetectors written by Kwong-kit Choi and published by World Scientific. This book was released on 1997-06-12 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.

Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Download or read book Investigation of Multicolor and Simplified Quantum Well Infrared Photodetectors for MWIR and LWIR Detection written by and published by . This book was released on 2000 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research program, we have investigated a four-stack, four-color quantum well infrared photodetector (QWIP), and studied the voltage distribution and temperature effect in this four-color QWIP. We have conducted a study on the quantum confined Stark-effect in an n-type QWIP. We have performed theoretical studies of the intersubband optical transitions in quantum dots and the design of GaAs/InGaAs and InAs/InAlAs quantum dot infrared photodetectors (QDIPs) for MWIR and LWIR detection. A new QWIP for very long wavelength infrared (VLWIR) applications has been investigated for 14-16 (micrometer) detection. Specific issues concerning device physics, detector design and device performance of the VLWIR QWIP are addressed. A VLWIR QWIP has been designed, fabricated and characterized. Two high performance multi-color, broadband QWIPs using digital graded superlattice barriers (DGSLB) for long wavelength infrared (LWIR) and broadband (BB) infrared detection have been demonstrated. We have also developed a high performance broadband (BB) In(0.26) Ga(0.74) As/Al(x) Ga(1-x)As QWIP using a linearly graded (LGB) Al(x) Ga(1-x) As barrier for LWIR detection. Theoretical study on the enhancement of quantum efficiency in a QWIP by using photonic crystal structure has also been carried out in this report.

Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Download or read book Quantum Structure Infrared Photodetectors written by Riccardo Introzzi and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum structure Infrared Photoetectors (QsIPs) are based on Intersubband transitions. GaAs mature technology makes Quantum Well Infrared Photodetectors (QWIPs) very attractive for their flexibility to enhanced device functionality and ease of integration with optoelectronic devices. Quantum Dot Infrared Photodetectors (QDIPs), based on 3-D confinement, are an evolution of QWIPs. They are expected to achieve higher detectivities. Charge transport has been investigated by current noise analysis, on QWIPs and QDIPs. Peculiar dynamics, beyond the expectations of noise models in literature, have been evidenced experimentally in QWIPs. An analytical model, based on a Langevin approach, has been developed and qualitatively reproduced real noise spectra. QDIP high performances have been hampered, so far, by homogeneity lack in self-assemble growing technology. Photoresponsivity and Noise spectra were found closely related to quantum dot inhomogeneity. Further insights has been added in the complex new phenomena observed in QDIPs. This work should help specialists as well anyone else who may be interested in better understanding the complex physics of QsIPs and the investigation methods.

Download or read book Quantum Dot Photodetectors written by Xin Tong and published by Springer Nature. This book was released on 2021-09-17 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.

Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

Download or read book Fabrication of Tunable Quantum Well Infrared Photodetectors QWIP Polarization Sensitive QWIPs and Enhanced Coupling Grating Structures written by and published by . This book was released on 2005 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project investigates the properties of intersubband reduced dimension devices based on quantum wells and quantum dots, which could be used for infrared detection. In the past few years, there has been active research on studying the performance characteristics of mid-wave infrared (MWIR, 3-5 m) and long-wave infrared (LWIR, 8-12 m) applications. Present-day photon detectors in this wavelength range need to be cooled to liquid nitrogen temperature or below. Quantum dot detectors are expected to display low dark current, large detectivity and better response at elevated temperature due to the longer lifetime of excited electrons due to greatly suppressed electron-phonon scattering. The responsivity and specific detectivity of QDIPs is significantly lower than those observed in mercury cadmium telluride (MCT) detectors. However, due to difficulties with the epitaxial growth of mercury based compounds, material defects cause problems with uniformity and operability across an array that continues to plague MCT focal plane arrays. QDIPs, on the other hand, are based on a comparatively mature GaAs technology and the uniformity of their response suggests that they can be incorporated into large area focal plane arrays (FPAs).

Download or read book Quantum Dot Long Wavelength Detectors written by Pallab Bhattacharya and published by . This book was released on 2002 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Long-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better high-temperature performance. We have obtained extremely low dark currents (I(sub dark) = 1.7 pA, T = 100 K, V(sub bias) 0.1 V), high detectivities (D* = 2.9 x 10(exp 8) cm Hz(sup 1/2)/W, T = 100 K, V(sub bias) = 0.2 V), and high operating temperatures (T 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs. will be described and discussed.