Download or read book Interstitial substitutional Diffusion in III V Compound Semiconductors Zn in GaAs written by Chiu Hsian Ting and published by . This book was released on 1968 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion in GaAs and other III V Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 1998-03-30 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.
Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-30 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book The Appearance of Vacancies During Cu and Zn Diffusion in III V Compound Semiconductors written by Mohamed Elsayed and published by . This book was released on 2011 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs and GaN are currently most important III-V compound semiconductors. They are used to produce a variety of optoelectronic devices because of their electronic properties and direct band gap. They also represent the basic materials of semiconductor lasers. These materials have superior properties compared with the elemental semiconductors such as silicon. The semiconductor devices are almost manufactured during heat treatment processes, which entails that some diffusion must take place during their fabrication. Thus, understanding the process of dopant diffusion is of great importance to keep control over the technology. The point defects in the material play an important role in determining and shaping its properties. The work aims to identify the defect properties during Cu and Zn diffusion in GaAs and GaN using positron annihilation spectroscopy (PAS) and whether the results agree with the diffusion mechanisms. A combination of positron lifetime spectroscopy (PALS) and coincidence Doppler broadening spectroscopy (CDBS) with a theoretical calculation of annihilation parameters was used for defect identification. Thermodynamics considerations especially the As vapor pressure-dependent defect concentration helped in the identification of defects. As vacancy complexes were identified in both semi-insulating and Zndoped GaAs whereas Ga vacancies decorated with copper in Te-doped GaAs are characterized during Cu diffusion. As-vacancy neighbored with Zn is identified in Zn-diffused GaAs. The defects are found to be present up to the same depth of the diffused impurities according to correlation between the results of variable energy positron annihilation spectroscopy (VEPAS), lifetime spectroscopy and secondary ion mass spectroscopy (SIMS), which indicates that the observed defects are induced through the impurity diffusion. Positron spectroscopy results were found to be in a good agreement with the kick-out mechanism during Cu in-diffusion in GaAs, whereas the appearance of vacancies during Cu out-diffusion is not compatible to any of the equilibrium diffusion mechanisms. The obtained results in case of GaN suggested that Cu diffuses via kick-out mechanism.
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Download or read book III V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Download or read book Physical Properties of III V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book Bibliography on Diffusion of Impurity Elements in Compound Semiconductors written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1961 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study of the literature pertaining to solid state diffusion in compound semiconductors has been made as a preliminary step to a research project in this area. The resulting bibliography is given in the hope that it may be useful to other workers interested in this subject. While no claim is made that the listings are exhaustive, it is believed that the more important publications are included. This is a relatively new field of research with many interesting problems in need of solution. (Author).
Download or read book Point Defects in Solids written by James H. Crawford and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 2014-05-14 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Download or read book Diffusion and Solubility of Impurity Elements in Compound Semiconductors written by G. L. PEARSON and published by . This book was released on 1963 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion of some impurity elements into III - V compounds is anomalous in that the diffusion coefficient is strongly concentration dependent. Careful measurements were made on the diffusion of Zn into both GaAs and GaP. A careful analysis of these results leads to the conclusion that diffusion occurs by an interstitial-substitutional mechanism, with the interstitial mode being dominant in the over-all process. The solubilities and distribution coefficients of Zn in these two semiconductors have been calculated as functions of temperature up to the melting point of the solvents. A sharp increase in the distribution coefficient near the melting point is accounted for by considering the transfer of neutral Zn from the liquid to the solid, where some Zn atoms become ionized acceptors. The relation between solid solubility and Zn vapor pressure at a fixed temperature has been investigated and theoretical calculations give results in good agreement with the experimental data. (Author).
Download or read book Physics of III V Compounds written by Robert K. Willardson and published by . This book was released on 1968 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Download or read book III V Integrated Circuit Fabrication Technology written by Shiban Tiku and published by CRC Press. This book was released on 2016-04-27 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1998 with total page 886 pages. Available in PDF, EPUB and Kindle. Book excerpt:
