Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 3 written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 5 written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 4 written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989-01-01 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors 6th Held in Oxford England 5 8 April 1989 Structure and Properties of Dislocations in Semiconductors 1989 written by and published by . This book was released on 1989 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Download or read book Properties and Structures of Dislocations in Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength written by H. Kitagawa and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the IUT AM Symposium of "Mesoscopic Dynamics of Fracture Process and Materials Strength", held in July 2003, at the Hotel Osaka Sun Palace, Osaka, Japan. The Symposium was proposed in 2001, aiming at organizing concentrated discussions on current understanding of fracture process and inhomogeneous deformation governing the materials strength with emphasis on the mesoscopic dynamics associated with evolutional mechanical behaviour under micro/macro mutual interaction. The decision of the General Assembly of International Union of Theoretical and Applied Mechanics (IUT AM) to accept our proposal was well-timed and attracted attention. Driven by the development of new theoretical and computational techniques, various novel challenges to investigate the mesoscopic dynamics have been actively done recently, including large-scaled 3D atomistic simulations, discrete dislocation dynamics and other micro/mesoscopic computational analyses. The Symposium attracted sixty-six participants from eight countries, and forty two papers were presented. The presentations comprised a wide variety of fundamental subjects of physics, mechanical models, computational strategies as well as engineering applications. Among the subjects, discussed are (a) dislocation patterning, (b) crystal plasticity, (c) characteristic fracture of amorphous/nanocrystal, (d) nano-indentation, (e) ductile-brittle transition, (f) ab-initio calculation, (g) computational methodology for multi-scale analysis and others.
Download or read book Dislocations in Solids written by Hiroshi Suzuki and published by CRC Press. This book was released on 2023-03-08 with total page 691 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.
Download or read book Structure and Properties of Extended Defects in Semiconductors written by European Science Foundation and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dislocations and Properties of Real Materials written by Metals Society. Metal Science Committee and published by Ashgate Publishing. This book was released on 1985 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding Materials written by Colin Humphreys and published by CRC Press. This book was released on 2020-01-29 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a very special book for two reasons. First, it is a tribute to Professor Sir Peter Hirsch from his students, colleagues and friends. Second, it is a collection of specially written review articles by world-class scientists that take the readers from the origins of modem materials science through to the cutting edge of the subject in the twenty- first century. The book will be a valuable resource for all researchers in materials science, particularly those specialising in electron microscopy and diffraction, and in the mechanical properties of materials. The front and back covers of this book are coloured images of historic electron micrographs depicting the first observation in the world of moving dislocations. The pictures were taken by Mike Whelan, then a research student of Peter Hirsch. The image on the front cover is before some dislocations have moved, and the back cover image is after the movement. See if you can spot the difference! This book had its genesis in a symposium organised by Mike Goringe, John Hutchison and myself to mark the retirement of Peter Hirsch from the Isaac Wolfson Chair of Metallurgy at Oxford. This symposium brought together a large number of Peter's former students and colleagues. Some of the most distinguished of these have now written the chapters in this book. The opening chapter, by Professor Ugo Valdre, provides a fascinating biographical sketch of Peter Hirsch from his early career in Cambridge to his retirement in Oxford. It contains many illuminating insights into the personality of Peter, both as a scientist and as a man. The next two chapters focus on the development of electron microscopy and diffraction. Professor Mike Whelan gives an eye-witness account of the seminal early work of Peter and his colleagues at Cambridge on the first observation of dislocations and their movements, using trans-mission electron microscopy. Professor Archie Howie extends this account to the present day, describing nanometer-scale resolution in scanning electron microscopes and atomic scale resolution in the scanning tunnelling microscope.
Download or read book Papers Presented at the European Research Conference on Extended Defects in Semiconductors written by and published by . This book was released on 1993 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Special Report written by and published by . This book was released on 1996 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
