Download or read book Interfacial Stress Effects in Gallium Arsenide Schottky Barrier Diodes written by Gregory K. Sherrill and published by . This book was released on 1985 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interface States in Schottky Barrier Diodes written by Jose M. Borrego and published by . This book was released on 1976 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium arsenide Schottky barrier junctions have become increasingly important in a wide variety of high performance GaAs microwave devices such as IMPATT diodes, Schottky gate FETs and RF detectors. Although neutron irradiation effects on silicon Schottky barrier junctions are well documented no detailed results have been reported for GaAs Schottky junctions. The purpose of this program was to explore the effect of fast neutron irradiation on the metal semiconductor interface and the resultant performance of Schottky barrier (including with transient ionizing radiation). Device changes at neutron fluences where the reduction in free carrier concentration is less than 20% were emphasized, as larger reductions in free carrier concentration l lead to gross changes in junction properties that cannot be tolerated in most applications. Gold and aluminum were selected as the metals for forming the Schottky junctions since there is a large variety of results for Au-GaAs Schottky junctions reported in the literature, which could be used for comparison purposes, and because the Al-GaAs junction has a lower barrier height and appears to be more stable than the Au-GaAs interface.
Download or read book Mechanical Stress Effects on the Electrical Characteristics of III nitride Devices written by Yuming Liu and published by . This book was released on 2006 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects on Gallium Arsenide Devices and Schottky Diodes Volume I written by and published by . This book was released on 1968 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory of operation of the Schottky barrier diode is reviewed, and complications caused by a more accurate space-charge formulation are discussed. Consideration is given to image effects, tunneling, interfacial dielectric layers, surface states, and minority carrier current. The interaction of ionizing radiation with semiconducting materials is reviewed, as is the behavior of a Schottky barrier diode in an ionizing radiation environment. The resultant model for the Schottky barrier diode is analogous to a p-n diode with a very high dopant concentration on one side. Tests were performed upon gallium arsenide (GaAs) and silicon Schottky barrier diodes, using a 2-Mev flash X-ray machine. The GaAs Schottky diodes were tested while functioning as an X-band detector and mixer. No permanent change was observed in the voltage-current or capacitance-voltage characteristics, or in the noise figure of the diodes after irradiation. Diodes fabricated from both types of material were also tested in a more conventional DC bias circuit.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, SIld disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna and broader dissemination. tional publishing house to assure improved service Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 30 (thesis year 1985) a total of 12,400 theses titles from 26 Canadian and 186 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work.
Download or read book Uniaxial Stress Effects on the Electronic Properties of Gallium Arsenide aluminum Gallium Arsenide Single double Barrier Heterostructures written by Shey-shi Lu and published by . This book was released on 1991 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optimization of noise and cutoff frequency of schottky barrier diodes for use in sub millimeter wavelengths written by Robert J. Mattauch and published by . This book was released on 1985 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Interfacial Chemistry on the Properties of Schottky Contacts to Gallium Arsenide written by Margaret Leslie Kniffin and published by . This book was released on 1990 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Download or read book Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes written by Donald A. Neamen and published by . This book was released on 1971 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) Schottky barrier diodes were fabricated and the transient ionizing and stable fast neutron radiation effects on these diodes were determined. (Author).
Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Download or read book Optimization of Schottky barrier mixer diodes for submillimeter wavelength application written by Robert J. Mattauch and published by . This book was released on 1989 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Schottky Barrier Diodes written by Martin J. Alter and published by . This book was released on 1968 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Role of Defects in Sulfide passivated Gallium Arsenide Surfaces and Metal gallium Arsenide Schottky Barriers written by Tao Zhang and published by . This book was released on 1989 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects on Gallium Arsenide Devices and Schottky Diodes written by Robert Harold Schnurr and published by . This book was released on 1968 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory of operation of the Schottky barrier diode is reviewed, and complications caused by a more accurate space-charge formulation are discussed. Consideration is given to image effects, tunneling, interfacial dielectric layers, surface states, and minority carrier current. The interaction of ionizing radiation with semiconducting materials is reviewed, as is the behavior of a Schottky barrier diode in an ionizing radiation environment. The resultant model for the Schottky barrier diode is analogous to a p-n diode with a very high dopant concentration on one side. Tests were performed upon gallium arsenide (GaAs) and silicon Schottky barrier diodes, using a 2-Mev flash X-ray machine. The GaAs Schottky diodes were tested while functioning as an X-band detector and mixer. No permanent change was observed in the voltage-current or capacitance-voltage characteristics, or in the noise figure of the diodes after irradiation. Diodes fabricated from both types of material were also tested in a more conventional DC bias circuit.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer. This book was released on 1984-05-31 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
