Download or read book Interfacial Chemistry in Chemical Mechanical Planarization CMP and Post CMP Cleaning of Surfaces for Microelestronic Applications written by Mingjie Zhong and published by . This book was released on 2013 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Mechanical Polishing 10 written by G. Banerjee and published by The Electrochemical Society. This book was released on 2009-05 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 10¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Download or read book Interfacial Forces in Chemical mechanical Polishing CMP written by Dedy Ng and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The demand for microelectronic device miniaturization requires new concepts and technology improvement in the integrated circuits fabrication. In last two decades, Chemical-Mechanical Polishing (CMP) has emerged as the process of choice for planarization. The process takes place at the interface of a substrate, a polishing pad, and an abrasive containing slurry. This synergetic process involves several forces in multi-length scales and multi-mechanisms. This research contributes fundamental understanding of surface and interface sciences of microelectronic materials with three major objectives. In order to extend the industrial impact of this research, the chemical-mechanical polishing (CMP) is used as a model system for this study. The first objective of this research is to investigate the interfacial forces in the CMP system. For the first time, the interfacial forces are discussed systematically and comparatively so that key forces in CMP can be pinpointed. The second objective of this research is to understand the basic principles of lubrication, i.e., fluid drag force that can be used to monitor, evaluate, and optimize CMP processes. New parameters were introduced to include the change of material properties during CMP. Using the experimental results, a new equation was developed to understand the principle of lubrication behind the CMP. The third objective is to study the synergy of those interfacial forces with electrochemistry. The electro-chemical-mechanical polishing (ECMP) of copper was studied. Experiments were conducted on the tribometer in combination with a potentiostat. Friction coefficient was used to monitor the polishing process and correlated with the wear behavior of post-CMP samples. Surface characterization was performed using AFM, SEM, and XPS techniques. Results from experiments were used to generate a new wear model, which provided insight from CMP mechanisms. The ECMP is currently the newest technique used in the semiconductor industries. This research is expected to contribute to the CMP technology and improve its process performance. This dissertation consists of six chapters. The first chapter covers the introduction and background information of surface forces and CMP. The motivation and objectives are discussed in the second chapter. The three major objectives which include approaches and expected results are covered in the next three chapters. Finally chapter VI summarizes the major discovery in this research and provides some recommendations for future work.
Download or read book Chemical Mechanical Polishing 14 written by R. Rhoades and published by The Electrochemical Society. This book was released on 2016-09-21 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoparticles Removal in Post CMP Chemical Mechanical Polishing Cleaning written by Dedy Ng and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research was performed to study the particle adhesion on the wafer surface after the chemical-mechanical polishing (CMP) process. The embedded particles can be abrasive particles from the slurry, debris from pad material, and particles of film being polished. Different methods of particle removal mechanism were investigated in order to find out the most effective technique. In post-CMP cleaning, surfactant was added in the solution. Results were compared with cleaning without surfactant and showed that cleaning was more effective with the combined interaction of the mechanical effort from the brush sweeping and the chemistry of the surfactant in the solution (i.e., tribochemical interaction). Numerical analysis was also performed to predict the particle removal rate with the addition of surfactants. The van der Waals forces present in the wafer-particle interface were calculated in order to find the energy required to remove the particle. Finally, the adhesion process was studied by modeling the van der Waals force as a function of separation distance between the particle and the surface. The successful adaptation of elasticity theory to nanoparticle-surface interaction brought insight into CMP cleaning mechanisms. The model tells us that it is not always the case that as the separation distance is decreased, the attraction force will be increased. The force value estimated can be used for slurry design and CMP process estimation.
Download or read book Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect written by Jie Cheng and published by Springer. This book was released on 2017-09-06 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
Download or read book Chemical mechanical Polishing written by and published by . This book was released on 2001 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Developments in Surface Contamination and Cleaning Volume 8 written by Rajiv Kohli and published by William Andrew. This book was released on 2014-11-19 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device sizes in the semiconductor industries shrink, devices become more vulnerable to smaller contaminant particles, and most conventional cleaning techniques employed in the industry are not effective at smaller scales. The book series Developments in Surface Contamination and Cleaning as a whole provides an excellent source of information on these alternative cleaning techniques as well as methods for characterization and validation of surface contamination. Each volume has a particular topical focus, covering the key techniques and recent developments in the area.Several novel wet and dry surface cleaning methods are addressed in this Volume. Many of these methods have not been reviewed previously, or the previous reviews are dated. These methods are finding increasing commercial application and the information in this book will be of high value to the reader. Edited by the leading experts in small-scale particle surface contamination, cleaning and cleaning control these books will be an invaluable reference for researchers and engineers in R&D, manufacturing, quality control and procurement specification situated in a multitude of industries such as: aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. Provides a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or handling the consequences of surface contamination Addresses the continuing trends of shrinking device size and contamination vulnerability in a range of industries, spearheaded by the semiconductor industry and others Covers novel wet and dry surface cleaning methods of increasing commercial importance
Download or read book Fundamentals of Interfacial Engineering written by Robert J. Stokes and published by John Wiley & Sons. This book was released on 1996-12-27 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: Eine in sich geschlossene, umfassende Einführung in die Grundlagen der Grenzflächenphänomene und ihrer Anwendung auf Prozesse und Produktdesign - geschrieben für Ingenieure aus Chemie, Elektronik und Biomedizin. Zwischenmolekulare Wechselwirkungen an der Grenzfläche werden ausführlich behandelt; Eigenschaften, Verarbeitung und Verhalten fluider Grenzflächen werden ebenso diskutiert wie Ober- und Grenzflächenmerkmale fester Stoffe. Dieses Buch ist relevant für den Praktiker in der Industrie, stellt aber gleichzeitig eine wertvolle Hilfe für Lehrkräfte ingenieurwissenschaftlicher Fachrichtungen bei der Ausbildungsplanung dar.
Download or read book Surface and Interfacial Science written by M. C. Rastogi and published by Alpha Science Int'l Ltd.. This book was released on 2003 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the changes occurring at surfaces and interfaces involving two or multi-phase system due to the interaction between surface atoms/molecules and those added either intentionally or inadvertently in form of gases (vapours) solvents (aqueous and nonaqueous) and solutions mostly of surface active agents. A clear picture of the mechanism involved in industrial processes, namely, lubrication, adhesion, wear, friction, maintenance engineering, surface coating, metallurgical operation in production of iron and steel, corrosion prevention, mineral beneficiation including recovery of fine coal from slurries from coal washeries, tertiary oil recovery etc. are provided.
Download or read book Characterization of the Chemical Mechanical Planarization CMP Polishing Pad Using Pyrene Fluorescence written by Kori V. Bevans and published by . This book was released on 1999 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in CMP Polishing Technologies written by Toshiro Doi and published by William Andrew. This book was released on 2011-12-06 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan
Download or read book Study of Interfacial Interaction During Chemical Mechanical Polishing cmp of Dielectric Silicon Dioxide written by Wonseop Choi and published by . This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interfacial Phenomena written by J.T. Davies and published by Academic Press. This book was released on 2012-12-02 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interfacial Phenomena examines the fundamental properties of various liquid interfaces. This book discusses the physics of surfaces; electrostatic and electrokinetic phenomena; and adsorption at liquid interfaces. The properties of monolayers; reactions at liquid surfaces; diffusion through interfaces; and disperse systems and adhesion are also deliberated. Other topics include the vapor pressures over curved surfaces; electrical capacity of the double layer; applications of electrophoresis; and thermodynamics of adsorption and desorption. The experimental methods of spreading films at the oil-water interface; penetration into monolayers; experiments on dynamic systems; and spontaneous emulsification are likewise covered in this text. This book is beneficial to chemical engineers and students concerned with interfacial phenomena.
Download or read book Chemical Mechanical Polishing 9 written by G. Banerjee and published by The Electrochemical Society. This book was released on 2008-05 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 9¿, held during the 213th meeting of The Electrochemical Society, in Phoenix, Arizona from May 18-23, 2008.
Download or read book Synergy Between Chemical Dissolution and Mechanical Abrasion During Chemical Mechanical Polishing of Copper written by Wei Che and published by . This book was released on 2005 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization (CMP) is becoming a promising mainstream semiconductor processing method because of its demonstrated capability to achieve better local and global planarization for various materials. However, the CMP process is influenced by a set of factors, which lead to a poor understanding of the material removal mechanisms (MRMs) and inhibits the migratability of the lab-scale experiments to industrial practice. This work focuses on the synergistic effects between chemical dissolution and mechanical abrasion to understand the MRMs during CMP. Initial in-situ wear test in chemically active slurry showed an increased material removal rate (MRR) relative to dry wear tests. To understand the synergistic effects, two plausible MRMs; (i) chemical dissolution enhanced mechanical abrasion and (ii) mechanical abrasion accelerated chemical dissolution, were investigated. In addition, a phenomenological MRR model based on scratch-intersections was formulated to understand the role of consumables and the process parameters. For mechanism I, a combined experimental and modeling technique was devised to understand the mechanical properties of the soft layer formed on the surface due to chemical exposure in CMP. The developed approaches utilized nano-scratch tests, nano-dynamic mechanical analysis (DMA) tests, the limit analysis solution of surface plowing under a spherical traveling indenter, and finite element simulation to deconvolute the soft layer thickness, hardness and elastic modulus. For mechanism II, it is found that the residual stress caused by the mechanical wear enhances the chemical etching rate, as manifested by an increase in wear depth. It is also found that the roughness with wavelength above a critical value grows while roughness of lower wavelength decays during etching, in which an established fact for stress-enhanced chemical dissolution is used. The developed understanding would enable understanding the root causes of defect generation mechanism and render remedies for yield improvements. The proposed models, through their mechanistic description, will facilitate an exploration of the design space and identification of realistic CMP process domains, including: (i) particle shape, size and concentration; (ii) adapting slurry chemistry for required rates of chemical dissolution and mechanical abrasion; and (iii) selecting pads with the proper surface morphology and stiffness.
Download or read book Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10 written by Takeshi Hattori and published by The Electrochemical Society. This book was released on 2007 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers topics related to the removal of contaminants from and conditioning of Si (SOI), SiC, Ge, SiGe, and III-V semiconductor surfaces; cleaning media, including non-aqueous cleaning methods and tools; front- and back-end cleaning operations; integrated cleaning; cleaning of MEMS; photomasks (reticles); porous low-k dielectrics; post-CMP cleaning; wafer bevel cleaning and polishing; characterization, evaluation, and monitoring of cleaning; correlation with device performance as well as cleaning of equipment and storage and handling hardware. The hardcover edition includes a bonus CD-ROM of Cleaning Technology in Semiconductor Device Manufacturing 1989?2007: Proceedings from the ECS Semiconductor Cleaning Symposia 1?10. This bonus material is not available with the PDF edition.
