Download or read book Integration of Resistive Switching Devices in Crossbar Structures written by Christian Nauenheim and published by Forschungszentrum Jülich. This book was released on 2010 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integration of Resistive Switching Devices in Crossbar Structures written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F2 (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO2, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in te
Download or read book 3D Integration of Resistive Switching Memory written by Qing Luo and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--
Download or read book 3D Integration of Resistive Switching Memory written by Qing Luo and published by CRC Press. This book was released on 2023-04-13 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Download or read book Resistive Switching written by Daniele Ielmini and published by . This book was released on 2016 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Download or read book Handbook of Memristor Networks written by Leon Chua and published by Springer Nature. This book was released on 2019-11-12 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.
Download or read book Resistive Switching in TiO2 Thin Films written by Lin Yang and published by Forschungszentrum Jülich. This book was released on 2011 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Memristors and Memristive Systems written by Ronald Tetzlaff and published by Springer Science & Business Media. This book was released on 2013-12-11 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.
Download or read book DC and RF Characterization of NiSi Schottky Barrier MOSFETs with Dopant Segregation written by Christoph Johannes Urban and published by Forschungszentrum Jülich. This book was released on 2010 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Zinc Oxide based Resistive Switching Devices written by Yang Zhang and published by . This book was released on 2014 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, resistive switching (RS) memory devices have attracted increasing attentions due to their potential applications in the next-generation nonvolatile memory. Zinc Oxide (ZnO) - based RS devices possess promising features, such as well-controlled switching properties by in-situ doping and alloying, low-temperature fabrication processes, superior radiation hardness, and low cost. The goal of the research is to study the feasibility of using the transitional metal (TM) doped ZnO for making RS devices. The Fe-doped ZnO (FeZnO) is used to make the bipolar and unipolar RS. The FeZnO is grown through MOCVD. Fe is a deep-level donor in ZnO, and Fe doping leads to better device thermal stability and larger value at the high resistance state (HRS) for switching. For the Ag/FeZnO/Pt bipolar RS structures, the ratio of the HRS over the low resistance state (LRS) of 3.8×10^2 is achieved. The dominant conduction mechanisms are attributed to the Poole-Frenkel emission at the HRS and Ohmic behavior at the LRS, respectively. A FeZnO/MgO bi-layer (BL) is used to replace the FeZnO single layer (SL) to form an Ag/FeZnO/MgO/Pt bipolar RS structure. This BL device demonstrates a higher RHRS/RLRS ratio (~106) than the SL counterpart. For the Au/FeZnO/MgO/Pt unipolar RS device, the RHRS/RLRS ratio of 2.4×10^6 at 1V is achieved. In order to reduce the processing temperature, the Ni-doped ZnO/MgO BL structure is adapted to make the RS devices using the sputtering - MOCVD hybrid deposition. The Ni doping enhances the compensation of oxygen deficiency in ZnO, resulting in larger HRS values. By controlling the compliance current during the "SET" process, three different reversible RS modes, i.e. threshold switching, volatile switching, and memory switching are obtained. Compared with the memory switching, the volatile switching possesses lower power consumption and better HRS stability. Furthermore, the different compliance currents lead to the different LRS values, which could be used for the multi-level per storage cell applications. The electrical characteristics and microstructure analysis suggest that the compliance current setting affects the formation and rupture of the metallic filaments, leading to the conversion of different switching modes. The FeZnO switching resistor (R) is vertically integrated with a ZnO diode (D) to form the 1D1R structure, which overcomes the cross-talk in the 1R-based crossbar switching matrix. The 1D1R exhibits high RHRS/RLRS ratio, excellent rectifying characteristics, and robust retention. The new ZnO RS technology presents great impact on the future classes of memory devices for applications such as switching matrix, multi-level storage, and 3D non-volatile memory architecture.
Download or read book Reliability of Nanoscale Circuits and Systems written by Miloš Stanisavljević and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended to give a general overview of reliability, faults, fault models, nanotechnology, nanodevices, fault-tolerant architectures and reliability evaluation techniques. Additionally, the book provides an in depth state-of-the-art research results and methods for fault tolerance as well as the methodology for designing fault-tolerant systems out of highly unreliable components.
Download or read book Magnetic Nano and Microwires written by Manuel Vázquez and published by Woodhead Publishing. This book was released on 2015-05-27 with total page 847 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetic nanowires and microwires are key tools in the development ofenhanced devices for information technology (memory and data processing) andsensing. Offering the combined characteristics of high density, high speed, andnon-volatility, they facilitate reliable control of the motion of magnetic domainwalls; a key requirement for the development of novel classes of logic and storagedevices. Part One introduces the design and synthesis of magnetic nanowires andmicrowires, reviewing the growth and processing of nanowires and nanowireheterostructures using such methods as sol-gel and electrodepositioncombinations, focused-electron/ion-beam-induced deposition, chemicalvapour transport, quenching and drawing and magnetic interactions. Magneticand transport properties, alongside domain walls, in nano- and microwiresare then explored in Part Two, before Part Three goes on to explore a widerange of applications for magnetic nano- and microwire devices, includingmemory, microwave and electrochemical applications, in addition to thermalspin polarization and configuration, magnetocalorific effects and Bloch pointdynamics. Detailed coverage of multiple key techniques for the growth and processing of nanowires and microwires Reviews the principles and difficulties involved in applying magnetic nano- and microwires to a wide range of applications Combines the expertise of specialists from around the globe to give a broad overview of current and future trends
Download or read book Vertical 3D Memory Technologies written by Betty Prince and published by John Wiley & Sons. This book was released on 2014-08-13 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt: The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later. Key features: Presents a review of the status and trends in 3-dimensional vertical memory chip technologies. Extensively reviews advanced vertical memory chip technology and development Explores technology process routes and 3D chip integration in a single reference
Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Download or read book Optoelectronic Organic Inorganic Semiconductor Heterojunctions written by Ye Zhou and published by CRC Press. This book was released on 2021-01-19 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic Organic-Inorganic Semiconductor Heterojunctions summarizes advances in the development of organic-inorganic semiconductor heterojunctions, points out challenges and possible solutions for material/device design, and evaluates prospects for commercial applications. Introduces the concept and basic mechanism of semiconductor heterojunctions Describes a series of organic-inorganic semiconductor heterojunctions with desirable electrical and optical properties for optoelectronic devices Discusses typical devices such as solar cells, photo-detectors, and optoelectronic memories Outlines the materials and device challenges as well as possible strategies to promote the commercial translation of semiconductor heterojunctions-based optoelectronic devices Aimed at graduate students and researchers working in solid-state materials and electronics, this book offers a comprehensive yet accessible view of the state of the art and future directions.
Download or read book Advances In 3d Integrated Circuits And Systems written by Hao Yu and published by World Scientific. This book was released on 2015-08-28 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: 3D integration is an emerging technology for the design of many-core microprocessors and memory integration. This book, Advances in 3D Integrated Circuits and Systems, is written to help readers understand 3D integrated circuits in three stages: device basics, system level management, and real designs.Contents presented in this book include fabrication techniques for 3D TSV and 2.5D TSI; device modeling; physical designs; thermal, power and I/O management; and 3D designs of sensors, I/Os, multi-core processors, and memory.Advanced undergraduates, graduate students, researchers and engineers may find this text useful for understanding the many challenges faced in the development and building of 3D integrated circuits and systems.
Download or read book Quantum Dot Optoelectronic Devices written by Peng Yu and published by Springer Nature. This book was released on 2020-04-16 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.
