Download or read book Integrated Silicon Device Technology written by and published by . This book was released on 1965 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology Oxidation written by Research Triangle Institute and published by . This book was released on 1963 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology Volume Vii Oxidation written by RESEARCH TRIANGLE INST DURHAM N C. and published by . This book was released on 1965 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: The common methods of growing oxide layers on silicon use either the high temperature reactions of silicon with steam (either in an open tube or a high pressure bomb), dry oxygen, wet oxygen, or the anodic reaction of silicon with various electrolytes or plasmas at room temperature or thereabout. The kinetics of each of these reactions is discussed and the results from typical experimental systems are presented. Oxide layers may also be deposited on the silicon surface by pyrolytic decomposition, reactive sputtering or vacuum evaporation. The effect of impurities upon the bulk physical and electrical properties of commercial glasses is discussed to suggest the type of variations in properties that might be anticipated with similar variations of the impurity content of oxide layers. Oxides in silicon device technology are used for impurity masking during diffusion, surface protection and passivation, electrical isolation, and as regions of active and passive components probably for all applications in which the density of surface charge at the oxide-silicon interface is critical. Procedures for obtaining high quality thermal oxides and for measuring the thickness of any oxide layer on silicon conclude the report.
Download or read book Fundamentals of Silicon Integrated Device Technology Oxidation diffusion and epitaxy v 2 Bipolar and unipolar transistors written by Robert M. Burger and published by . This book was released on 1967 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Integrated Device Technology written by Mikhail Mikhailovich Lavrentiev and published by . This book was released on 1967 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology written by Research Triangle Institute and published by . This book was released on 1963 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Integrated Device Technology Oxidation diffusion and epitaxy v 2 Bipolar and unipolar transistors written by Robert M. Burger and published by . This book was released on 1967 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology Photoengraving written by Research Triangle Institute and published by . This book was released on 1963 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology written by and published by . This book was released on 1965 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Integrated Silicon Device Technology Capacitance written by Research Triangle Institute and published by . This book was released on 1963 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selected Experiments in Silicon Integrated Device Technology written by R. M. Burger and published by . This book was released on 1964 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: The experimental work that was performed as supplementary investigation to the preparation of the 'Silicon Integrated Device Technology' series is presented. In addition to the five volumes of this series that were compiled, supporting experimental work was done in three areas: (1) anodic oxidation of silicon for integrated circuits; (2) statistical methods for the evaluation of laboratory processes, steam oxidation of silicon was the process considered initially; and (3) impurity diffusion into silicon from a gas source. Phosphine gas was the first impurity gas investigated. (Author).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Download or read book Integrated Silicon Device Technology Volume Xiii Intraconnections and Isolation written by R. P. Donovan and published by . This book was released on 1967 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume discusses methods of coupling and decoupling elements on a silicon block according to a conventional schematic diagram. The conducting paths in an integrated circuit can be realized by a variety of methods such as bulk paths, diffused channels, jumper wires, mixed conducting slurries or deposited metals. The latter is by far the most important. Such deposited metals are usually adequate for making ohmic contacts to silicon as well. Isolation of elements in an integrated circuit is also accomplished by a variety of methods, the most effective of which are the various dielectric isolation methods. Dielectrics used include silicon oxide, silicon nitride, silicon carbide and air. Other techniques, relying on reverse biased junctions and bulk resistances, are adequate for many applications and are easier to fabricate. Reverse biased junctions are the most common isolation method employed in production-type integrated circuits. (Author).
