Download or read book Integrated Reliability Workshop Final Report 2007 IEEE International written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1999 IEEE International Integrated Reliability Workshop Final Report written by International Integrated Reliability Workshop and published by . This book was released on 1999 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Integrated Reliability Workshop Final Report written by and published by . This book was released on 2005 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1998 IEEE International Integrated Reliability Workshop Final Report written by IEEE Reliability Society and published by IEEE. This book was released on 1998 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Integrated Reliability Workshop provides a forum for sharing new approaches to achieve and maintain microelectronic component reliability. Topics include: contributors to failure; waver level reliability; building in reliability; and reliability test structures.

Download or read book Final report written by and published by . This book was released on 1996 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1995 International Integrated Reliability Workshop Final Report written by and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 2004 IEEE International Integrated Reliability Workshop Final Report written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1999 IEEE International Integrated Reliability Workshop Final Report written by IEEE Electron Devices Society and published by IEEE. This book was released on 1999 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text constitutes the final report produced from the IEEE International Integrated Reliability Workshop, which took part in 1999.

Download or read book 1996 International Integrated Reliability Workshop Final Report written by IEEE Electron Devices Society and published by IEEE. This book was released on 1997 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Integrated Reliability Workshop provides a forum for sharing new approaches to achieve and maintain microelectronic component reliability. The 1996 Final Report includes papers, abstracts, and summaries from the conference.

Download or read book 1996 International Integrated Reliability Workshop Final Report written by and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book On the Perspectives of Wide Band Gap Power Devices in Electronic Based Power Conversion for Renewable Systems written by Samuel Vasconcelos Araújo and published by kassel university press GmbH. This book was released on 2013-06-13 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1993 International Integrated Reliability Workshop Final Report written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Circuit Design for Reliability written by Ricardo Reis and published by Springer. This book was released on 2014-11-08 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units. The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management.

Download or read book Integrated Reliability Workshop Final Report 1993 International written by and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1994 International Integrated Reliability Workshop Final Report written by and published by IEEE. This book was released on 1994-01-01 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability of high k metal gate field effect transistors considering circuit operational constraints written by Steve Kupke and published by BoD – Books on Demand. This book was released on 2016-06-06 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage. The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.