Download or read book Analytical and Computer aided Models for III V Compound Semiconductor Devices written by An-Jui Shey and published by . This book was released on 1990 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Download or read book III V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Optoelectronic Integrated Circuit Design and Device Modeling written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2011-09-19 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao

Download or read book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Download or read book Compound Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.

Download or read book III V Microelectronics written by J.P. Nougier and published by Elsevier. This book was released on 2014-05-27 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.

Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.

Download or read book Journal of Research of the National Bureau of Standards written by United States. National Bureau of Standards and published by . This book was released on 1988 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Introduction to Flexible Electronics written by Aftab M. Hussain and published by CRC Press. This book was released on 2021-12-26 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of flexible electronics has grown rapidly over the last two decades with diverse applications including wearable gadgets and medical equipment. This textbook comprehensively covers the fundamental aspects of flexible electronics along with materials and processing techniques. It discusses topics including flexural rigidity, flexible PCBs, organic semiconductors, nanostructured materials, material reliability, electronic reliability, crystalline and polymer materials, semiconductor processing, and flexible silicon in depth. The text covers advantages, disadvantages, and applications of processes such as sol-gel processing and ink-jet printing. Pedagogical features such as solved problems and unsolved exercises are interspersed throughout the text for better understanding. FEATURES Covers major areas such as materials, physics, processes, and applications of flexible electronics Contains homework problems for readers to understand concepts in an easy manner Discusses, in detail, various types of materials, such as flexible silicon, metal oxides, and organic semiconductors Explains the application of flexible electronics in displays, solar cells, and batteries Includes a section on stretchable electronics This textbook is primarily written for senior undergraduate and graduate students in electrical engineering, electronics, materials science, chemistry, and communication engineering for a course on flexible electronics. Teaching resources are available, including a solutions manual for instructors.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book High Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Download or read book Physical Model and Applications of High Efficiency Electro Optical Conversion Devices written by Feng Chi and published by Frontiers Media SA. This book was released on 2022-02-02 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research in Progress written by and published by . This book was released on 1992 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: