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Book Damage and Recovery in Electron Irradiated Silicon Heavily Doped with Phosphorus

Download or read book Damage and Recovery in Electron Irradiated Silicon Heavily Doped with Phosphorus written by C. P. Carnes and published by . This book was released on 1970 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: The damaging effects of radiation on solid state devices are ultimately traceable to radiation-induced changes in material properties vital to the performance characteristics of the device. The identification of defect structures, and an understanding of how they are introduced, altered and removed, and an understanding of the changes in physical properties caused by these defects are important in assessing the effects produced in devices and in evolving corrective measures. The work reported here deals with the introduction and recovery of damage produced in 0.1 ohm-cm P-doped float-zone silicon irradiated at room temperature with 1.0-MeV electrons. Possible explanations are considered for the reduction of the damage introduction rate with repeated electron irradiations and the annealing behavior is compared to that observed in more lightly doped material. The authors suggest that the decrease in introduction rate may be due to recombinations of mobile vacancies with trapped interstitials and/or to recombinations of mobile interstitials with vacancies at defect structures. Isothermal annealing experiments were performed to determine the kinetics of the recovery processes. The recovery kinetics were not resolved, but the recovery processes in silicon heavily doped with phosphorus appear to be more complicated with those involved in more lightly doped material. (Author).

Book NBS Technical Note

Download or read book NBS Technical Note written by and published by . This book was released on 1973-06 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1983 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book NASA Technical Note

    Book Details:
  • Author :
  • Publisher :
  • Release : 1967
  • ISBN :
  • Pages : 438 pages

Download or read book NASA Technical Note written by and published by . This book was released on 1967 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Lattice Defects in Semiconductors

Download or read book Lattice Defects in Semiconductors written by Ryukiti R. Hasiguti and published by . This book was released on 1968 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Methods of Measurement for Semiconductor Materials  Process Control  and Devices

Download or read book Methods of Measurement for Semiconductor Materials Process Control and Devices written by United States. National Bureau of Standards and published by . This book was released on 1973 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Monthly Accession List

    Book Details:
  • Author : Radiation Effects Information Center (Columbus, Ohio).
  • Publisher :
  • Release : 1970-07
  • ISBN :
  • Pages : 30 pages

Download or read book Monthly Accession List written by Radiation Effects Information Center (Columbus, Ohio). and published by . This book was released on 1970-07 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Optical Absorption of Impurities and Defects in Semiconducting Crystals

Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Book Government Reports Announcements

Download or read book Government Reports Announcements written by and published by . This book was released on 1974 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Neutron Transmutation Doped Silicon

Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Book Intrinsic Point Defects  Impurities  and Their Diffusion in Silicon

Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electronic Properties of Materials

Download or read book Electronic Properties of Materials written by H. Thayne Johnson and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 1697 pages. Available in PDF, EPUB and Kindle. Book excerpt: HIS FIRST EDITION OF Electronic Properties of Force Materials Laboratory, where Air Force respon T Materials: A Guide to the Literature initiates a sibility for these contracts has resided. Mr. John W. plan for making available the indexing work of the Atwood is Project Manager at Hughes Aircraft Electronic Properties Information Center. Since the Company. inception of EPIC in June, 1961, a basic objective has Professional members of EPIC are Charles L. M. been to use techniques and procedures that would Blocher, Donald L. Grigsby, Dana H. Johnson, allow maximum distribution and use of EPIC output. Thomas J. Lyndon, John T. Milek, Meta S. Neu Accordingly, data processing and reproduction tech berger, and Emil Schafer. All have ably contributed niques were established to reproduce and distribute to this work. Mr. Johnson and Mrs. Neuberger have easily and economically a few copies of what was been primarily responsible for the indexing effort; then a card index. Mr. Lyndon has supervised the classical library pro As the program advanced, it became apparent that cedures and the clerical effort; Mr. Blocher and Mr. a few copies of the index were not enough. The index Grigsby have controlled the indexing vocabulary, the should be available to all, instead of just a select few. cross-references, and the data processing input; and However, this would have meant so many copies that Mr. Schafer has prepared the very excellent glossary, the cost would have drained funds from the program with the assistance of Mr. Milek.

Book Technical Abstract Bulletin

Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1967 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Government Reports Index

Download or read book Government Reports Index written by and published by . This book was released on 1971 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt: