Download or read book Infrared and Raman Studies of Radio Frequency Sputtered Hydrogenated Amorphous Silicon Carbide Thin Films written by Hasbullah A. Hasbi and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Chemical Mechanical and Surface Properties of Thin Films of Hydrogenated Amorphous Carbon written by Gilroy John Vandentop and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1990 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterisation of Hydrogenated R F Sputtered Amorphous Silicon Carbide Films written by Fook Leong Loo and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge Based Rf Mems written by Rocco John Parro (III.) and published by . This book was released on 2010 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.
Download or read book Amorphous Silicon Carbide Thin Films written by Mariana Amorim Fraga and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Download or read book Silicon Carbide Thin Film Deposition by Reactive Ion Beam Sputtering written by and published by . This book was released on 1991 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with a graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended (silicon)target would have reduced experimental errors.
Download or read book Oxidation Studies of Hydrogenated Amorphous Silicon Carbide Films written by Liang Pao Lee and published by . This book was released on 2001 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Download or read book Structural Properties of Hydrogenated Amorphous Silicon a Si H Thin Film Grown Via Radio Frequency Plasma Enhanced Chemical Vapor Deposition RF PECVD written by Hasbullah Anthony Hasbi and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the growth mechanism of hydrogenated amorphous silicon films by infrared reflection absorption spectroscopy written by Yasutake Toyoshima and published by . This book was released on 1996 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Real Time Study of Hydrogenated Amorphous Silicon Microcrystalline Silicon and Amorphous Silicon Carbide Growth by Optically Enhanced Infrared Reflectance Spectroscopy written by Monica Katiyar and published by . This book was released on 1994 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new, optically enhanced reflection infrared spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared to film changes or growth rates. This technique has industrial application in monitoring and controlling processes which involve a large or complex parameter space. These include interface control and the fundamentals of crystal growth, plasma deposition, and etching. These applications are illustrated in the thesis by studying the deposition of hydrogenated amorphous silicon (a-Si:H), microcrystalline silicon ($mu$c-Si:H), and hydrogenated amorphous silicon carbide $rm (a-Sisb{1-x}Csb{x}$:H) thin films by reactive magnetron sputtering. Complimentary information about the film microstructure is obtained from real time spectroscopic ellipsometry measurements. For a-Si:H growth, we present the first detailed and quantitative set of experimental data on hydrogen incorporation and release processes. The absorption due to the stretching modes of Si-H bonds (1800-2300 cm$sp{-1}$) is used to quantify the increase or loss of H during film growth. A narrow component at $sim$2100 cm$sp{-1}$ corresponding to all SiH$sb{rm X}$ bonds on the physical surface is identified for the first time; the line width of this mode is used to distinguish signals from the bulk and the surface. Various combinations of growth flux (isotope labelling, hydrogen partial pressure between 0.1 and 2.0 mTorr) and substrate material (on SiO$sb2$, a-Si, or a-Si:D) at substrate temperatures between 120 to 350$spcirc$C are used to quantify surface hydrogen coverage, hydrogen implantation, and H removal from surface and sub-surface. We analyze the growth of $mu$c-Si:H on SiO$sb2$ substrate; no evidence of etching during $mu$c-Si deposition is found. We also study the phase transformation of amorphous to microcrystalline silicon when an a-Si film is exposed to a pure H$sb2$ plasma. The a-Si is first heavily hydrogenated and then transforms to $mu$c-Si with a concomitant decrease in H content. During a-Si$rmsb{1-x}$C$rmsb{x}$:H growth, a transition layer rich in hydrogen and carbon is observed between the film and the substrate; steady state growth is not achieved until $>$250 on A SiO$sb2$, and $sim$70 A on a-Si:H substrates.
Download or read book Quality Hydrogenated Amorphous Silicon Thin Films by Triode Assisted Reactive Sputtering written by Daniel W. Konz and published by . This book was released on 1997 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Optical Properties of Silicon Carbide Thin Film SiC Deposited by RF Magnetron Sputtering written by Kok Weng Lam (ld) and published by . This book was released on 2009 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Annealing on the Structural Properties of R F Sputtered Amorphous Silicon Carbide Films written by Tiong Yew Ong and published by . This book was released on 1998 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984-06-01 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts
Download or read book Radio Frequency Sputtering of Dielectric Thin Films written by Michael Gerard Songy and published by . This book was released on 1969 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
