Download or read book Influence origine et passivation de d fauts cristallographiques dans du silicium polycristallin written by Larbi Ammor and published by . This book was released on 1984 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: MISE EN EVIDENCE DE L'INFLUENCE DES DEFAUTS SUR LES CARACTERISTIQUES COURANT-TENSION DE JONCTION N+-P. EXISTENCE D'UNE CORRELATION ENTRE LA VALEUR ELEVEE DES DENSITES DE DISLOCATIONS, LA DECROISSANCE DES LONGUEURS DE DIFFUSION DES PORTEURS MINORITAIRES, ET DES CONCENTRATIONS DE CARBONE SUPERIEURES A LA LIMITE DE SOLUBILITE. POSSIBILITE DE REDUCTION DE L'ACTIVITE RECOMBISSANTE DES DEFAUTS ETENDUS PAR RECUIT PROLONGE SOUS FLUX D'HYDROGENE MOLECULAIRE OU PAR IMPLANTATION D'HYDROGENE PENDANT QUELQUES MINUTES

Download or read book Caract risation passivation et mod lisation de l influence de d fauts cristallographiques sur les propri t s de jonctions N P written by Hassan El Ghitani and published by . This book was released on 1988 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: LES AUTEURS SE SONT PARTICULIEREMENT INTERESSES AUX DISLOCATIONS DANS LE POLYCRISTAL DE SILICIUM ET ILS ONT DEVELOPPE UN MODELE THEORIQUE POUR TRADUIRE LEUR INFLUENCE EN TERME DE DENSITE ET D'ACTIVITE RECOMBINANTE SUR LES PROPRIETES ELECTRIQUES DU POLYSILICIUM. UN AUTRE MODELE A ETE DEVELOPPE POUR CALCULER LE PROFIT PHOTOELECTRIQUE ET LA VITESSE DE RECOMBINAISON INTERFACIALE AUX JOINTS DE GRAINS. ON COMPARE LES RESULTATS DES MODELES SUR LES RESULTATS EXPERIMENTAUX OBTENUS SUR DES DIODES MESAS PN NET DES DIODES SEMITRANSPARENTES CR-SI. APPLICATION AUSSI A LA PASSIVATION DE PHOTOPILES SOLAIRES PAR L'HYDROGENE QUI S'INTERPRETE FACILEMENT AVEC LE MODELE

Download or read book Influence et passivation par l hydrog ne de d fauts recombinants dans du silicium polycristallin de type P written by Larbi Ammor and published by . This book was released on 1987 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: DETERMINATION DE L'INFLUENCE DES DISLOCATIONS SUR LES PROPRIETES ELECTRIQUES DU SILICIUM. MISE EN EVIDENCE D'UNE CORRELATION ENTRE LA PRESENCE DE DENSITES ELEVEES DE DISLOCATIONS, LA DECROISSANCE DES LONGUEURS DE DIFFUSION DES PORTEURS MINORITAIRES, LA PRESENCE DE PRECIPITES ET LES CONCENTRATIONS DE CARBONE DEPASSANT LA LIMITE DE SOLUBILITE. EFFET D'UN RECUIT PROLONGE SOUS FLUX D'HYDROGENE MOLECULAIRE OU PAR IMPLANTATION D'IONS H**(+) PENDANT QUELQUES MINUTES. L'IMPORTANCE DU PHENOMEME DE PASSIVATION PAR RAPPORT A LA PRESENCE DE DISLOCATIONS EST SOULIGNEE

Download or read book Physical Properties of Amorphous Materials written by David Adler and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate rials. It has since played an important role in promoting the und er standing of disordered matter in general. An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during 1982-83 with distinguished speakers from universities and industry. These events were free and open to the public ,and were attended by many representatives of the scientific community. The lectures themselves were highly successful inasmuch as they provided not only formal instruction but also an opportunity for vigorous and stimulating debate. That last element could not be captured within the pages of a book I but the lectures concentrated on the latest advances in the field I which is why their essential contents are he re reproduced in collective form. Together they constitute an interdisciplinary status report of the field. The speakers brought many different viewpoints and a variety of back ground experiences io bear on the problems involved I but though language and conventions vary I the essential unity of the concerns is very clear I as indeed are the ultimate benefits of the many-sided approach.