Download or read book Inductively coupled Plasma Reactive Ion Etching ICP RIE with HBR and Other Etch Chemistries of SI SIGE based Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy LT MBE written by Si-Young Park and published by . This book was released on 2006 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The International Technology Roadmap for Semiconductors (ITRS) forecasts that current semiconductor technology based on the mainstream silicon CMOS platform is approaching its scaling of limit. One emerging technology which may augment CMOS and extend its operational lifetime is tunneling devices together with transistors. Tunnel diode based circuits have superior performance regarding high speed operation concurrently with low power consumption. Si-based resonant interband tunnel diodes (RITD) developed by this research group that are grown epitaxially using low temperature molecular beam epitaxy (LT-MBE), now enable monolithic integration with Si CMOS and SiGe technology. This thesis focuses on the study of the plasma damage from inductively- coupled plasma reactive ion etching (ICP-RIE) processes using several different process gases, various ICP powers and substrate bias powers compared to wet etching techniques on Si-based diodes grown using low temperature molecular beam epitaxial (LT-MBE). Of particular interest and promise is an HBr etch chemistry that provides hydrogen passivation while etching. The minimization from incident ion damage and residual surface contamination during dry plasma etching is one of the key issues in modern VLSI manufacturing, especially as transistors/devices are scaled to below 50 nm lengths. Many researchers, therefore, are still developing many advanced techniques to reduce and minimize plasma damage created by dry plasma etching process.
Download or read book Inductively Coupled Plasma Reactive Ion Etching ICP RIE Nanofabrication Tool for High Resolution Pattern Transfer written by and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: High resolution lithography and directional ion etching are increasingly important for the fabrication of nanostructures. As part of this equipment proposal, a reactive ion etching system was purchased from Oxford Instruments for $305,000. The Army Research Office provided $274,000, and Caltech cost share amounted to $31,500. This instrument was connected and etching conditions were optimized for the fabrication of nanostructures in silicon, silicon dioxide and gallium arsenide. In this final progress report, we will present some examples of functional devices which have been defined by using this very capable ion etching system.
Download or read book ECR ICP and RIE Plasma Etching of GaN written by and published by . This book was released on 1996 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 [mu]m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique.
Download or read book Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics written by and published by . This book was released on 2002 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Fuel Cells I written by Günther G. Scherer and published by Springer Science & Business Media. This book was released on 2008-09-11 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: See table of contents
Download or read book National Semiconductor Metrology Program written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1995 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rectenna Solar Cells written by Garret Moddel and published by Springer Science & Business Media. This book was released on 2013-09-16 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by experts in their specialized fields.
Download or read book Handbook of Silicon Semiconductor Metrology written by Alain C. Diebold and published by CRC Press. This book was released on 2001-06-29 with total page 703 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Download or read book Characterization and Metrology for ULSI Technology 2005 written by David G. Seiler and published by American Institute of Physics. This book was released on 2005-09-29 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt: The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Download or read book Yvain written by Chretien de Troyes and published by Yale University Press. This book was released on 1987-09-10 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: A twelfth-century poem by the creator of the Arthurian romance describes the courageous exploits and triumphs of a brave lord who tries to win back his deserted wife's love
Download or read book Nanometer Scale Science and Technology written by Maria Allegrini and published by . This book was released on 2001 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Materials written by L.S. Miller and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic materials are a dominant factor in many areas of modern technology. The need to understand'them is paramount; this book addresses that need. The main aim of this volume is to provide a broad unified view of electronic materials, including key aspects of their science and technology and also, in many cases, their commercial implications. It was considered important that much of the contents of such an overview should be intelligible by a broad audience of graduates and industrial scientists, and relevant to advanced undergraduate studies. It should also be up to date and even looking forward to the future. Although more extensive, and written specifically as a text, the resulting book has much in common with a short course of the same name given at Coventry Polytechnic. The interpretation of the term "electronic materials" used in this volume is a very broad one, in line with the initial aim. The principal restriction is that, with one or two minor exceptions relating to aspects of device processing, for example, the materials dealt with are all active materials. Materials such as simple insulators or simple conductors, playing only a passive role, are not singled out for consider ation. Active materials might be defined as those involved in the processing of signals in a way that depends crucially on some specific property of those materials, and the immediate question then concerns the types of signals that might be considered.
Download or read book Electromigration in Thin Films and Electronic Devices written by Choong-Un Kim and published by Elsevier. This book was released on 2011-08-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Download or read book Optical Characterization of Semiconductors written by Sidney Perkowitz and published by Elsevier. This book was released on 2012-12-02 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time. Discusses and compares infrared, Raman, and photoluminescence methods Enables readers to choose the best method for a given problem Illustrates applications to help non-experts and industrial users, with answers to selected common problems Presents fundamentals with examples from the semiconductor literature without excessive abstract discussion Features equipment lists and discussion of techniques to help establish characterization laboratories
