Download or read book Die waldtypen armeniens written by G. D. Jaroschenko and published by . This book was released on 1936 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Implantation Doping of GaN written by and published by . This book was released on 1996 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET).
Download or read book P and N type Implantation Doping of GaN with Ca and O written by and published by . This book was released on 1996 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Doping and High Temperature Annealing of GaN written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus of extensive research for application to visible light emitters and as the basis for high temperature electronics. Recent advances in ion implantation doping of GaN and studies of the effect of rapid thermal annealing up to 1100°C are making new device structures possible. Both p- and n-type implantation doping of GaN has been achieved using Mg co-implanted with P for p-type and Si-implantation for n-type. Electrical activation was achieved by rapid thermal anneals in excess of 1000°C. Atomic force microscopy studies of the surface of GaN after a series of anneals from 750 to 1100°C shows that the surface morphology gets smoother following anneals in Ar or N2. The photoluminescence of the annealed samples also shows enhanced bandedge emission for both annealing ambients. For the deep level emission near 2.2 eV, the sample annealed in N2 shows slightly reduced emission while the sample annealed in Ar shows increased emission. These annealing results suggest a combination of defect interactions occur during the high temperature processing.
Download or read book Implant Activation and Redistribution of Dopants in GaN written by and published by . This book was released on 1996 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and related III-Nitride materials (IN, an) have recently been the focus of extensive research for photonic and electronic device applications. As this material system matures, ion implantation doping and isolation is expected to play an important role in advance device demonstrations. To this end, we report the demonstration of implanted p-type doping with Mg+P and Ca as well as n-type doping with Si in GaN. These implanted dopants require annealing 105 approximately1100 °C to achieve electrical activity, but demonstrate limited redistribution at this temperature. The redistribution of other potential dopants in GaN (such as Be, Zn, and Cd) will also be reported. Results for a GaN junction field effect transistor (JFET), the first GaN device to use implantation doping, will also be presented.
Download or read book P type Doping of GaN written by Raechelle Kimberly Wong and published by . This book was released on 2000 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doping and Isolation of GaN InGaN and InAlN Using Ion Implantation written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Both n- and p-type doping have been achieved in GaN using Si[sup+] or Mg[sup+]/P[sup+] implantation, respectively, followed annealing at[ge] 1050[degrees]C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In[sub 0.75]Al[sub 0.25]N with multiple energy inert species (e.g. N[sup+] or F[sup+]) produces high resistivity ([ge]10[sup 8][omega]/[open-square]) after subsequent annealing in the range 600-700[degrees]C. Smaller increases in sheet resistance are observed for In[sub x]Ga[sup 1-x]N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.
Download or read book Doping and Isolation of GaN InGaN and InAIN Using Ion Implantation written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Area P type Doping in Gallium Nitride Using Ion Implantation for High Power Applications written by Yekan Wang and published by . This book was released on 2022 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnesium ion implantation and subsequent activation annealing shows promise as an effective p-type doping method in Gallium Nitride (GaN). This dissertation relates implant-induced defects and the electrical performance. The implantation process introduces an elastic strain purely orthogonal to the (0001). Complete strain recovery is achieved by annealing at 1300 °C for 10 min (one GPa N2 overpressure) for dose level up to 1 1015 cm-2. However, extended defects such as stacking faults, dislocation loops, and inversion domains form during the anneal. Critical extended defects in the form of inversion domains were found to contain electrically inactive Mg after annealing at temperatures of 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. A key finding of this work was to demonstrate that annealing at temperatures above 1300 °C eliminates the presence of the Mg-rich inversion domains. While other residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis shows no sign of Mg segregation at dislocation loops or other defects. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Electrical measurements show that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C, which points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures (e"1400 °C) annealing cycles to activate Mg acceptors. Novel characterization methods combining high resolution x-ray scattering and transmission electron microscopy were developed to understand the implant-induced strain recovery process and the evolution of extended defect structures after the dopant activation anneal. It was found that homoepitaxial GaN on high quality native substrates is necessary for clearly assessing the implant-induced defects by separating them from the pre-existing intrinsic defects. Results from this work are expected to bring the understanding of the key processing steps to achieve high activation efficiency selective area p-type doping for vertical GaN device structures in a scalable framework
Download or read book Ion Implantation of Epitaxial GaN Films written by and published by . This book was released on 1996 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studied for radiation damage and its recovery using Rutherford backscattering/channeling, photoluminescence, and cross-sectional TEM. The highest fluence of (1e15 cm−2) 110 keV Mg and 160 keV Si produced little damage at implantation temperature 550 C. RT damage was higher for same fluences compared to 550 C implantation. The damage was partially annealed by RTA at 1000 C, however, this was not enough to recover the PL signal even for the lowest fluence (1e14 cm−2). XTEM of as-implanted samples revealed small clusters of defects extended beyond the projected ion range. To recover damage completely, perhaps one needs to go either much higher RTA temperature and/or implant samples in a smaller fluence increment and anneal in between implants to recover the damage.
Download or read book Ion Implantation Damage Annealing and Dopant Activation in Epitaxial GaN written by Agajan Suvkhanov and published by . This book was released on 2001 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Status of Ion Implantation Doping and Isolation of III V Nitrides written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Download or read book Ion Implantation Into GaN written by Sergei O. Kucheyev and published by . This book was released on 2001 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Into GaN written by Sergei O. Kucheyev and published by . This book was released on 2001 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
