Download or read book Impact of the Growth Kinetics on Deep Level Defect Production in GaN Films Grown by Molecular Beam Epitaxy written by Hsing-Long Liu and published by . This book was released on 1996 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Growth Kinetics and Thermodynamics on the Properties of GaN Grown by Molecular Beam Epitaxy written by Devin Earl Crawford and published by . This book was released on 1996 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Kinetics of GaN Grown by Molecular Beam Epitaxy Using Ga and Ammonia written by Ruediger Held and published by . This book was released on 1999 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Deep Level Defects in GaN C GaN Mg and Pseudomorphic AlGaN GaN Films written by Andrew M. Armstrong and published by . This book was released on 2006 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: GaN-based electronics have a high defect density that impedes device performance. This dissertation investigates the origin of deep levels in GaN and AlGaN/GaN with emphasis on component layers in heterojunction field effect transistors (HFETs). To elucidate the origin of deep levels, spectroscopic techniques were employed to track deep level incorporation as a function of growth methods, growth conditions, doping levels, and Al mole fraction. Techniques were devised for quantitative analysis of deep level concentrations in wide bandgap, semi-insulating semiconductors, and discernment of the deep level spectrum of a nanoscale, pseudomorphic AlGaN layers grown on much thicker GaN films. In GaN:C, which find application as resistive buffers in AlGaN/GaN HFETs, deep states at Ec-3.0 and Ec-3.28 eV were identified with carbon. The deep level at Ec-3.0 eV was associated with a carbon-related yellow luminescence band at 2.2 eV through application of a configuration-coordinate model. The site selectivity of carbon and mechanism for semi-insulating behavior in GaN:C:Si films was observed to depend on substrate temperature of films grown by molecular beam epitaxy. Deep levels in p-type GaN:Mg were found near both band edges, with major levels at Ev+3.05, 3.22 and 3.27 eV, and the Ev+3.27 eV state was attributed to residual carbon. Additional states were evident at Ec-2.97 and 3.24 eV, and the latter was attributed to MgGa itself. Methods were established for discriminating the deep level spectra of pseudomorphic, nanoscale AlGaN layers grown upon much thicker GaN films. Deep levels at Ec-2.00 and Ec-3.85 eV were associated with the AlGaN layer while other deep levels at Ec-2.65 and Ec-3.30 eV were attributed to the underlying GaN. Near-Ev bandgap states in were evident in all AlGaN/GaN films, and appear prototypic for Al mole fraction 0
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GROWTH KINETICS OF GAN DURING written by 鄭聯喜 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growth Kinetics of GaN During Molecular Beam Epitaxy" by 鄭聯喜, Lianxi, Zheng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124274 Subjects: Surfaces (Physics) Gallium nitride Molecular beam epitaxy Scanning tunneling microscopy
Download or read book Structure Morphology and Kinetics of GaN Film Growth Using Gas source and RF Plasma assisted Metal organic Molecular Beam Epitaxy written by Arthur Randall Woll and published by . This book was released on 2000 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Kinetics of III V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources written by Bingwen Liang and published by . This book was released on 1993 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Download or read book Cracking in GaN Films Grown by Hydride Vapor Phase Epitaxy written by Edward V. Etzkorn and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride and its alloys have found increasingly widespread application in optical and electronic devices. Device performance can be substantially improved by homoepitaxial growth on GaN thick films or substrates produced by hydride vapor phase epitaxy (HVPE). To optimize these films, the extended defect and impurity densities must be minimized and the film cracking resulting from the intrinsic growth stress must be prevented. The implications of reactor design and procedure and of the mechanics of cracking for attaining these goals are elucidated in this work.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Investigation of Defects and Surface Polarity in GaN Using Hot Wet Etching Together with Microscopy and Diffraction Techniques written by and published by . This book was released on 2002 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H3PO4 and molten KOH to estimate the defect density in GaN films grown by hydride vapor phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Free-standing whiskers and hexagonal etch pits are formed by PEC and wet etching respectively. Using Atomic Force Microscopy (AFM), we found the whisker density to be similar to etch pit densities for samples etched under precise conditions. Additionally Transmission Electron Microscopy (TEM) observations confirmed dislocation densities obtained by etching which increased our confidence in the consistency of methods used. Hot wet etching was used also to investigate the polarity of GaN films together with Convergent Beam Electron Diffraction (CBED) and AFM imaging. We found that hot H3PO4 etches N-polarity GaN films very quickly resulting in the complete removal or drastic change of surface morphology as revealed by AFM or optical microscopy. On the contrary, the acid attacks only defect sites in Ga-polarity films producing nanometer-scale pits but leaving the defect-free GaN intact and the morphology unchanged. Additionally, the polarity assignments were related to the as-grown morphology and to the growth conditions of the buffer layer and the subsequent GaN layer.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Kinetics of Silicon Films written by Victor Fuenzalida and published by . This book was released on 1985 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:
