Download or read book III V Semiconductor Photodetectors for Infrared Applications written by Hui Shao and published by . This book was released on 2007 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chapter 2 and 3 discuss two infrared heterojunction photodiodes at room temperature. Chapter 2 studies an InGaAsSb photodiode with a high detectivity and a 50% cutoff wavelength at 2.6mum. Chapter 3 describes a non-cryogenic InAsSb photodiode with a 50% cutoff wavelength at 4.3mum.
Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
Download or read book The Physics of Quantum Well Infrared Photodetectors written by K. K. Choi and published by World Scientific. This book was released on 1997 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared managing.
Download or read book Narrow gap Semiconductor Photodiodes written by Antoni Rogalski and published by SPIE Press. This book was released on 2000 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Download or read book Intersubband Infrared Photodetectors written by V. Ryzhii and published by World Scientific. This book was released on 2003 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
Download or read book Development of New III V Semiconductor Quantum Well Infrared Photodetectors for Mid and Long wavelength Infrared Detection written by Yanhua Wang and published by . This book was released on 1994 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation three types of III-V semiconductor quantum well infrared photodetectors (QWIPs) have been developed for 3-5 um mid-wavelength infrared (MWIR) and 8-14 um long-wavelength infrared (LWIR) detection. they are (1) GaAs/AlGaAs, GaAs/InGaP bound to continuum (BTC) QWIPs and InGaAs/InAlAs bound to miniband (BTM) QWIP, (2) nomral-incidence type II indirect bandgap AlAs/AlGaAs QWIP, and (3) normal incidence p-type strained layer InGaAS/InAlAs and InGaAs/GaAs QWIPs. These QWIP structures were grown by the molecular beam epitaxy (MBE) technique, with the exception of the GaAs/InGaP QWIP, which was grown by the metal-organic chemical vapor deposition (MOCVD) technique. Detectivity ranging from 10^9 to 10^12 cm-\/Hz/W was obtained for these QWIPs at T=77 K. The BTC and BTM QWIPs exhibited both photoconductive (PC) an photvoltain (PV) dual-mode (DM) detection characteristics. the peak wavelengths for the GaAs/AlGaAs QWIP were found to be at 7.7um and 12 um. The peak wavelengths for the GaAs/InGaP QWIP were found to be at 6.0um and 8.2 um. the voltage tunable InGaAs/InAlAs QWIP showed a peak wavelength of 10 um with dual-mode operation. a normal-incidence type II indirect bandgap AlAs/AlGaAs QWIP grown on (110)GaAS substrate was developed, which shows a multicolor detection feature with peak response wavelengths occurred at 2.2, 2.7, 3.5, 4.8, 6.5, and 12.5 um. Extremely large photo-conductivity gains of 630 and 3200 at peak wavelengths of 3.5 and 2.2 um were obtained at Vb=3 and 6 V, respectively, while a broad spectral photoresponse with peak wavelength at 12.5 um was observed. A normal-incidence p-type tensile strained-layer InGaAs/InAlAs QWIP grown on InP substrate with an ultralow dark current density (about six orders of magnitude smaller than the standard GaAs/AlGaAs QWIP) was developed in this work. this QWIP has achieved background limited performance (BLIP) for T
Download or read book Proceedings of the First International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications written by Farhad Radpour and published by . This book was released on 1995 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Infrared Photodetectors Based on III V Semiconductor Quantum Wells and Dots written by Jie Liang and published by . This book was released on 2006 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: Voltage tunable features of superlattice-coupled two stack QWIPs were investigated. Under different bias voltages the devices' photoresponse peak intensity shifted from 6.0 mum to 10.3 mum at T = 7 K. This peak was due to the bound-to-bound transitions from the different stacks.
Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Download or read book Two dimensional Materials for Photodetector written by Pramoda Kumar Nayak and published by BoD – Books on Demand. This book was released on 2018-04-04 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.
Download or read book Infrared and Terahertz Detectors Third Edition written by Antoni Rogalski and published by CRC Press. This book was released on 2019-01-10 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Download or read book Surface Conduction in III V Semiconductor Infrared Detector Materials written by Daniel Sidor and published by . This book was released on 2017 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: "III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are fine ectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture o ers a potential solution. III-V bulk unipolar barrier detectors that e ectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated."--Page ix.
Download or read book Handbook of II VI Semiconductor Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-02-02 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.
Download or read book Photodetectors written by P.N.J. Dennis and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a new series of scientific text-books being published by Plenum Publishing Company Limited. The scope of the series is to review a chosen topic in each volume, and in addition, to present abstracts of the most important references cited in the text. Thus allowing the reader to supplement the information contained within this book without have to refer to many additional publications. This volume is devoted to the subject of Radiation Detectors, known as Photodetectors, and particular emphasis has been placed on devices operating in the infrared region of the electromagnetic spectrum. Although some detectors which are sensitive at ultraviolet and visible wavelengths, are also described. The existence of the infrared region of the spectrum has been known for almost two hundred years but the development of detectors specifically for these wavelengths was limited for a long time due to technology limitations and difficulties in understanding and explaining the phenomena involved. Significant advances were made during World War II, when the potential military applications of being able "to see in the dar~' were demonstrated, and this progress has been maintained during the last forty years when many major advances have been achieved, such that the use of photodetectors for both civil and military applications is now relatively common and can be inexpensive.
Download or read book Infrared Applications of Semiconductors II Volume 484 written by Donald L. McDaniel and published by . This book was released on 1998-04-20 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Infrared Applications of Semiconductors written by and published by . This book was released on 1997 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt:
