Download or read book III V Compound Semiconductor Nanostructures by Selective Area Growth Using Block Copolymer Lithography written by Ruijuan Li and published by . This book was released on 2003 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Area Growth of In plane III V Nanostructures Using Molecular Beam Epitaxy written by Maria Fahed and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of nanostructures such as quantum dots and nanowires is a very promising way of integration of III-V semiconductors on silicon, since it allows answering most of the associated material challenges. Together with the continuous trend in device scaling, it should lead to the development of new highly efficient opto- and microelectronic circuits. This appeals for a full mastering of the growth and processing of 3D architectures at the nanometer scale. Consequently, the present work aims at investigating the selective area growth (SAG) of III-V semiconductors by molecular beam epitaxy (MBE) in nanoscale patterns. Homoepitaxial SAG of InAs and InP are first reported in order to show that the growth conditions, the opening width and the stripe directions allow tailoring the nanocrystal shape. We then achieve the SAG of in-plane GaSb nanotemplates on a highly mismatched GaAs (001) substrate at low temperature by atomic hydrogen assisted MBE. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb. Finally, from this study, we demonstrate how these GaSb nanotemplates can be used for subsequent growth of in-plane InAs nanowires.
Download or read book Growth and Characterization of III V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition written by Ryan S. Dowdy and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar 110 GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of III V Compound Semiconductor Nanostructures written by Marlene Zander and published by . This book was released on 2012 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dopant Profiling of III V Nanostructures for Electronic Applications written by Alexandra Caroline Ford and published by . This book was released on 2011 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of 4̃,000 cm2/Vs and ION/IOFF 1̃04. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (4̃00 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5-10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (1̃ nm thick). Top-gated FETs exhibit a peak transconductance of 1̃.6 mS/0µm at VDS=0.5V with ION/IOFF>104and subthreshold swings of 107-150 mV/decade for a channel length of 0̃.5 0µm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are utilized to investigate the intrinsic electron transport properties as a function of nanowire radius. From C-V characterization, the densities of thermally-activated fixed charges and trap states on the surface of as-grown (unpassivated) nanowires are investigated to allow the accurate measurement of the gate oxide capacitance. This allows the direct assessment of the electron field-effect mobility. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data highlighting the impact of surface roughness scattering on the mobility degradation for smaller radius nanowires. Next, the electrical properties of the InAs XOI transistors are studied, showing the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Following the investigation of the electrical properties of undoped InAs nanostructures, post-growth, surface doping processes for InAs nanostructures are addressed. Nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach is demonstrated as a means to create ultrashallow junctions. From transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), a dopant profile abruptness of 3̃.5 nm/decade is observed without significant lattice damage. The n+/p+ junctions fabricated using this doping method exhibit negative differential resistance (NDR) behavior, demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of 8̃x1018 cm-3. Next, a gas phase doping approach for InAs nanowires and ultrathin XOI layers using zinc is demonstrated as an effective means for enabling post-growth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of gated diodes and p-MOSFETs. Electrically active zinc concentrations of 1̃x1019 cm-3 are achieved which is necessary for compensating the high electron concentration at the surface of InAs to enable heavily p-doped structures. This work could have important applications for the fabrication of planar and non-planar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage and local stoichiometry imbalance. Lastly, an ultrathin body InAs XOI tunneling field-effect transistor (TFET) on Si substrate is demonstrated. The post-growth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs XOI compared to ion implantation. The transistor exhibits gated NDR behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. This work presents a device and materials platform for studying III-V tunnel transistors.
Download or read book Photo Assisted Epitaxial Growth for III V Semiconductors Selective Area Epitaxy written by and published by . This book was released on 1995 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3.
Download or read book Fundamental Principles of Optical Lithography written by Chris Mack and published by John Wiley & Sons. This book was released on 2011-08-10 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication of an integrated circuit requires a variety of physical and chemical processes to be performed on a semiconductor substrate. In general, these processes fall into three categories: film deposition, patterning, and semiconductor doping. Films of both conductors and insulators are used to connect and isolate transistors and their components. By creating structures of these various components millions of transistors can be built and wired together to form the complex circuitry of modern microelectronic devices. Fundamental to all of these processes is lithography, ie, the formation of three-dimensional relief images on the substrate for subsequent transfer of the pattern to the substrate. This book presents a complete theoretical and practical treatment of the topic of lithography for both students and researchers. It comprises ten detailed chapters plus three appendices with problems provided at the end of each chapter. Additional Information: Visiting http://www.lithoguru.com/textbook/index.html enhances the reader's understanding as the website supplies information on how you can download a free laboratory manual, Optical Lithography Modelling with MATLAB®, to accompany the textbook. You can also contact the author and find help for instructors.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Nanoscale Semiconductor Lasers written by Cunzhu Tong and published by Elsevier. This book was released on 2019-08-06 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies. - Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications - Demonstrates how to connect different classes of material to specific applications - Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities
Download or read book CMOS Past Present and Future written by Henry Radamson and published by Woodhead Publishing. This book was released on 2018-04-03 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. - Addresses challenges and opportunities for the use of CMOS - Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components - Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities
Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Block Copolymers II written by Volker Abetz and published by Springer Science & Business Media. This book was released on 2005-12-02 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: . A.J. M ller, V. Balsamo, M.L. Arnal: Nucleation and Crystallization in Diblock and Triblock Copolymers.- 2 J.-F. Gohy: Block Copolymer Micelles.- 3 M.A. Hillmyer: Nanoporous Materials from Block Copolymer Precursors.- 4 M. Li, C. Coenjarts, C.K. Ober: Patternable Block Copolymers.-
Download or read book Advanced Metallization Conference 2007 AMC 2007 Volume 23 written by Andrew J. McKerrow and published by Materials Research Society. This book was released on 2008-01-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Metallization Conference - held in Albany, New York, and Tokyo, Japan - marked its 24th anniversary in 2007. These two sister conferences form a unique "one conference at two sites" that focuses on latest R&D and manufacturing results, as well as real-world integration and reliability data on the application of metallization and related technologies for advanced IC devices. Scientists and engineers from around the world came to listen and present state-of-the-art work in the field of ULSI interconnect technology including metallization, dielectrics, integration, packaging, design and vertical integration. Great progress has been made in ULSI metallization, but new challenges in performance, reliability and integration are expected as dimension continues to shrink. The importance of continued basic research in nanoscience and technology, using either metal wires or new materials such as carbon nanotubes, was declared key to the future of ULSI interconnects.
Download or read book Compound Semiconductor Photonics written by Chua Soo-Jin and published by CRC Press. This book was released on 2020-03-26 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Download or read book Nanolithography written by M. Gentili and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Success in the fabrication of structures at the nanometer length scale has opened up a new horizon to condensed matter physics: the study of quantum phenomena in confined boxes, wires, rings, etc. A new class of electronic devices based on this physics has been proposed, with the promise of a new functionality for ultrafast and/or ultradense electronic circuits. Such applications demand highly sophisticated fabrication techniques, the crucial one being lithography. Nanolithography contains updated reviews by major experts on the well established techniques -- electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL) -- as well as on emergent techniques, such as scanning tunnelling lithography (STL).
