Download or read book III nitride Nanostructures for Optoelectronic and Magnetic Functionalities written by Thomas F. Kent and published by . This book was released on 2014 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last two decades, group III-nitride compound semiconductor materials have revolutionized modern optoelectronics and high frequency devices. In this work, III-nitride based compound semiconductor nanostructures with tailor-made optoelectronic and magnetic functionalities are investigated. The first research vector concerns design, synthesis and characterization of novel ferromagnetic materials based on III-nitrides involving manipulation of magnetic dopants as well as heteroepitaxy of ferromagnetic materials. Synthesis of III-nitride-GdN epitaxial, ferromagnetic nanocomposites is developed using the technique of plasma assisted molecular beam epitaxy. Magnetic, structural and optical characteristics of these materials are tailored to yield nanocomposites which preserve the structural and semiconducting characteristics of GaN while integrating the ferromagnetic compound GdN. In the second part of this work, the growth, characterization and development of self-assembled III-nitride nanowire based ultraviolet light emitting diodes is explored. These devices are formed by a novel heterostructure which utilizes synthetic gradients in dipole moment per unit volume to mitigate many of the shortcomings of traditional thin film wide bandgap light emitting diode (LED) device designs for deep ultraviolet wavelengths. The optical and electronic characteristics of these devices are investigated by a number of spectroscopic methods. Combination of this heterostructure with the epitaxy of GdN on III-nitrides is found to yield a unique electrical device which allows electrical modulation of narrow linewidth, ultraviolet Gd intra-f-shell fluorescence at significantly lower voltages compared to existing technology. During the course of this work, a number of unique scientific instruments were developed to aid research efforts in the Myers group. The design, construction and operation of a wide spectral bandwidth, ultrafast semiconductor photoluminescence characterization system, a spectroscopic probe station for high throughput measurements of deep ultraviolet LED's and a modified closed cycle He cryostat for magnetic field dependent low level optoelectronic measurements is described. The dissertation closes with a discussion of various collaborative works of the author as well as a broad summary, conclusions and suggested future directions.
Download or read book III Nitride Nanostructures for Infrared Optoelectronics written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanostructures for Optoelectronic Applications written by Todd D. Steiner and published by Artech House. This book was released on 2004 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
Download or read book Nanostructuring for Nitride Light Emitting Diodes and Optical Cavities written by Kwai Hei Li and published by Springer. This book was released on 2015-12-08 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the design and fabrication of novel nanostructures in III-nitride material systems. It introduces an inexpensive and ultra-efficient nanopatterning method – nanosphere lithography (NSL) – used to develop diversely functional nanostructures, including clover-shaped photonic crystals, nanorings, and nanolenses. Furthermore, the research findings previously distributed in various international scientific journals and conference papers are brought together and methodically presented in a unified form. The book is of interest to postgraduate students, university researchers, R&D engineers and scientists in the fields of nanoelectronics, optoelectronics and photonics.
Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Download or read book III nitride Materials Devices and Nano structures written by Zhe Chuan Feng and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications. The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps. Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009."--Publisher's website.
Download or read book III Nitride Materials Devices written by Zhe Chuan Feng and published by Wspc (Europe). This book was released on 2017 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is Zhe Chuan Feng's third book on the topic of III-nitride materials, following the original III-Nitride Semiconductor Materials (2006) and the subsequent III-Nitride Devices and Nanoengineering (2008). The development of these materials and devices is moving so rapidly that constant updates and amendments are needed to reflect new research discoveries. This book covers recent innovation and achievements in the field, in particular those made since 2009.
Download or read book Rare Earth Doped III Nitride Nanostructures for Device Applications written by Kiran Dasari and published by . This book was released on 2017 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book To Study the ECR Plasma Assisted Growth of III V Nitride such as GaN and Nanostructures written by Viswas Purohit and published by University of Pune, PhD Dissertation. This book was released on with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: RESEARCH THESIS by Viswas Purohit PhD, Plasma Physics University of Pune, MAH, India “To study the ECR assisted Growth of III-V nitride (such as GaN) and nanostructures”. • The aim of the work carried out was to design and develop a permanent magnet based Electron Cyclotron Resonance (ECR) plasma system as well as to study the plasma assisted material synthesis and modifications with the ECR plasma. Overall the aims were, a) Development of an ECR plasma system b) Carrying out plasma diagnostics using Langmuir double probe and Retarding field analyzer. c) Use of hollow cathode discharge for synthesizing metallic nanomaterials, which spawned two more projects in our department. d) Depositing GaN by MOCVD within an ECR plasma reactor.
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Download or read book Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics written by Mohamed Henini and published by Elsevier Science. This book was released on 2008 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1969, Leo Esaki (1973 Nobel Laureate) and Ray Tsu from IBM, USA, proposed research on “man-made crystals” using a semiconductor superlattice (a semiconductor structure comprising several alternating ultra-thin layers of semiconductor materials with different properties). This invention was perhaps the first proposal to advocate the engineering of a new semiconductor material, and triggered a wide spectrum of experimental and theoretical investigations. However, the study of what are now called low dimensional structures (LDS) began in the late 1970's when sufficiently thin epitaxial layers were first produced following developments in the technology of epitaxial growth of semiconductors, mainly pioneered in industrial laboratories for device purposes. The LDS are materials structures whose dimensions are comparable with inter-atomic distances in solids (i.e. nanometre, nm). Their electronic properties are significantly different from the same material in bulk form. These properties are changed by quantum effects. At the inception of their investigation it was already clear that such structures were of great scientific interest and excitement and their novel properties caused by quantum effects offered potential for application in new devices. Moreover these complex LDS offer device engineers new design opportunities for tailor-made new generation electronic devices. The LDS could be considered as a new branch of condensed matter physics because of the large variety of possible structures and the changes in the physical processes. One of the promising fabrication methods to produce and study structures with a dimension less than two such as quantum wires and quantum dots, in order to realise novel devices that make use of low-dimensional confinement effects, is self-organisation. Self-assembled nanostructured materials offer a number of advantages over conventional material technologies in a wide-range of sectors. Clearly, future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. Key Features: - Contributors are world leaders in the field - Brings together all the factors which are essential in self-organisation of quantum nanostructures - Reviews the current status of research and development in self-organised nanostructured materials - Provides a ready source of information on a wide range of topics - Useful to any scientist who is involved in nanotechnology - Excellent starting point for workers entering the field - Serves as an excellent reference manual
Download or read book Semiconductor Nanotechnology written by Stephen M. Goodnick and published by Springer. This book was released on 2018-07-26 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
Download or read book Functionalized Nanomaterials for Catalytic Application written by Chaudhery Mustansar Hussain and published by John Wiley & Sons. This book was released on 2021-07-21 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: Functionalized Nanomaterials for Catalytic Application
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Laser Ablation in Liquids written by Guowei Yang and published by CRC Press. This book was released on 2012-02-22 with total page 1166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the fundamental concepts and physical and chemical aspects of pulsed laser ablation of solid targets in liquid environments and its applications in the preparation of nanomaterials and fabrication of nanostructures. The areas of focus include basic thermodynamic and kinetic processes of laser ablation in liquids, and its applic
Download or read book Ultra wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
