Download or read book Hot Carrier induced Degradation and Gamma Radiation induced Degradation in Silicon germanium HBTs and VCOs microform written by Coralie R. (Coralie Ruth) Gill and published by Library and Archives Canada = Bibliothèque et Archives Canada. This book was released on 2004 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book The Carrier recombination Behavior and Annealing Properties of Radiation induced Recombination Centers in Germanium written by Orlie Lindsey Curtis and published by . This book was released on 1961 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Download or read book A Study of Gamma radiation induced Effects in Gallium Nitride Based Devices written by Gilberto A. Umana-Membreno and published by . This book was released on 2006 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: [Truncated abstract] Over the past decade, the group III-nitride semiconducting compounds (GaN, AlN, InN, and their alloys) have attracted tremendous research efforts due to their unique electronic and optical properties. Their low thermal carrier generation rates and large breakdown fields make them attractive for the development of robust electronic devices capable of reliable operation in extreme conditions, i.e. at high power/voltage levels, high temperatures and in radiation environments. For device applications in radiation environments, such as space electronics, GaN-based devices are expected to manifest superior radiation hardness and reliability without the need for cumber- some and expensive cooling systems and/or radiation shielding. The principle aim of this Thesis is to ascertain the level of susceptibility of current GaN-based elec- tron devices to radiation-induced degradation, by undertaking a detailed study of 60Co gamma-irradiation-induced defects and defect-related effects on the electrical characteristics of n-type GaN-based materials and devices . . . While the irradiation-induced effects on device threshold voltage could be regarded as relatively benign (taking into account that the irradiation levels employed in this study are equivalent to more than 60 years exposure at the average ionising dose rate levels present in space missions), the observed device instabilities and the degradation of gate current characteristics are deleterious effects which will have a significant impact on the performance of AlGaN/GaN HEMTs operating in radiation environments at low temperatures, a combination of conditions which are found in spaceborne electronic systems.
Download or read book Physical Mechanisms Affecting Hot Carrier induced Degradation in Gallium Nitride HEMTs written by Shubhajit Mukherjee and published by . This book was released on 2015 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hardness Assurance Testing and Radiation Hardening by Design Techniques for Silicon germanium Heterojunction Bipolar Transistors and Digital Logic Circuits written by Akil Khamisi Sutton and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.
Download or read book Circuit level Techniques for Mitigating Radiation induced Degradation of Commercial Microelectronics in Space written by Maximillian Alvarez Holliday and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The survivability of microelectronic devices in harsh radiation environments has a profound impact on spacecraft reliability and is a limiting factor in our species becoming a multi-planet civilization. Despite recent sociotechnical advancements providing more access to space, the radiation-induced degradation of modern electronic systems continues to dictate overall mission scope, cost, and lifetime. The paradigm of one-off engineering feats comprised of bespoke radiation-hardened circuits no longer fits the increasingly competitive landscape of satellite and small-spacecraft development. To bridge this divide, this thesis describes the development of non-invasive circuit-level techniques for improving the reliability of commercial electronics in space in order to to better equip future spacecraft with the capabilities afforded by modern consumer microelectronics. This dissertation documents the development of two techniques for improving component-level and system-level reliability of commercial electronics in ionizing radiation. The first technique exploits the periodic nature of many space radiation environments to achieve as much as 300% improvement in device lifetime by modulating device power during periods of intense irradiation. Through simulation and subsequent experimental testing using a Cs-137 gamma source, this "dynamic biasing" technique lays the foundation for providing electronic systems a means of intelligently responding to the real-time radiation environment without additional shielding or modifications to individual semiconductor architectures. Next, the design and verification of a second technique is presented which enables improved system-level reliability of commercial electronics by mitigating the single-point failure mode inherent to popular serial communication protocols. A simple external circuit is proposed and evaluated for its effectiveness in digitally isolating one or more devices in the event of failure. We show through simulation and hardware implementation that these isolation schemes are effective at preventing bus-wide failure in the event of peripheral device malfunction for two serial bus protocols, Inter-Integrated Circuit (I2C) and Serial Peripheral Interface (SPI), without requiring additional I/O or processing overhead. The isolation circuits were integrated into the avionics hardware of three small-satellite spacecraft and their operation validated at communication speeds of 400 kHz (fast-mode) for I2C and 5 MHz for SPI before, during, and after inducing device failure on the bus. By eliminating the single-point failure mode of I2C and SPI protocols, the developed isolation techniques were found to significantly reduce the likelihood of system failure for the satellite mission. The last portion of this thesis details the real-world application of the previously described dynamic biasing and serial bus isolation techniques, culminating in an open-source spacecraft avionics platform and two successful on-orbit satellite missions. The design and operating principles of our open-source hardware and software platform for spacecraft development, called PyCubed, is presented and its widespread adoption across the small-satellite community discussed. Application of the PyCubed framework is then detailed in the design and operation of the 2019 "KickSat-2" CubeSat mission which successfully dispensing 105 "femtosatellites, " each weighing less than 100 grams, in low-Earth orbit at an altitude of 300 km. Finally, details and on-orbit data from the 2021 "V-R3x" mission are presented, which involved the development and operation of three 1U CubeSats for coordinated networking and technology demonstrations in low-Earth orbit at an altitude of 500 km.
Download or read book Radiation Induced Effects in Semiconductor Devices written by Shrinivasrao Kulkarni and published by LAP Lambert Academic Publishing. This book was released on 2013 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: When semiconductor devices operate in a radiation environment (ex: space), they undergo severe degradation. The degradation behaviour is a complex process and is dependent not only on the nature of the device but also on the radiation characteristics viz., dose, dose rate, species and the energy of radiation. The study of the effect of radiation on semiconductor devices is important both from the academic as well as technological point of view. Academically it is very important to have an understanding of the physical mechanism of the damage process and technologically it is important to assess the device performance when they need to be operated in the radiation environment. This book involves the study of radiation induced effects in Bipolar Junction Transistors planned for space applications. The devices exposed to electromagnetic radiation, 8 MeV electrons and 24 MeV protons are characterized before and after irradiation to understand the radiation induced degradation mechanism. Apart from discrete devices, heavy ion induced effects on a few space borne VLSI devices have also been carried out and results are discussed. In addition to this, some simulation results are discussed.
Download or read book Bias Dependence of Radiation Response and Reliability of AlGaN GaN HEMTs written by Rong Jiang and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Some Effects of Gamma Radiation on Silicon and Silicon Devices written by DeWitt Landis and published by . This book was released on 1967 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Electron Induced Degradation in VLSI MOS Devices written by Si Ping Zhao and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Silicon and Germanium written by Orlie L Curtis (Jr) and published by . This book was released on 1966 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following have been studied and reported: (a) The influence of aluminum on carrier degradation in neutron-irradiated silicon. (b) Dependence of carrier lifetime on excess density for neutron-irradiated silicon. (c) Influence of impurities on carrier removal and annealing in neutron-irradiated silicon in the resistivity range from 0.5 to 50 ohm-cm. (d) Recombination level position from the dependence of lifetime on excess density in n-type germanium following irradiation. (e) Short-term annealing in bulk silicon following pulsed neutron irradiation. (f) Carrier recombination at disordered regions in neutron-irradiated semiconductors. (Author).
Download or read book A 3 state Defect Model for Light induced Degradation in Boron doped Float zone Silicon written by David Sperber and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
