Download or read book High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect written by Yiwen Rong and published by Stanford University. This book was released on 2010 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.

Download or read book High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect written by Yiwen Rong and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.

Download or read book High Speed Low Driving Voltage Vertical Cavity MQW Modulators for Optical Interconnect and Communication written by Hong Liu and published by . This book was released on 2001 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Speed Germanium Silicon Modulators For Optical Interconnect written by Yiwen Rong and published by LAP Lambert Academic Publishing. This book was released on 2014-11-28 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects.

Download or read book Surface normal Germanium Quantum Well Modulators for Free space Optical Interconnects to Silicon written by Ross Michael Audet and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Today's computer systems are constrained by the high power consumption and limited bandwidth of inter- and intra-chip electrical interconnections. Optical links could alleviate these problems, provided that the optical and electronic elements are tightly integrated. Most present optical modulators use materials systems that are incompatible with CMOS device fabrication, or rely on weak electrooptic effects that are difficult to utilize for vertical incidence devices. The extremely high communications bandwidth demands of future silicon chips may ultimately require massively parallel free-space optical links based on array integration of such vertical incidence modulators. We have investigated the suitability of surface-normal asymmetric Fabry-Perot electroabsorption modulators for short-distance optical interconnections between silicon chips. These modulators should be made as small as possible to minimize device capacitance; however, size-dependent optical properties impose constraints on the dimensions. We have thus performed simulations that demonstrate how the optical performance of the modulators depends on both the spot size of the incident beam and the dimensions of the device. We also discuss the tolerance to nonidealities such as surface roughness and beam misalignment. The particular modulators considered here are structures based upon the quantum-confined Stark effect in Ge/SiGe quantum wells. We present device designs that have predicted extinction ratios greater than 7 dB and switching energies as low as 10 fF/bit, which suggests that these CMOS-compatible devices can enable high interconnect bandwidths without the need for wavelength division multiplexing. Next, we present experimental results from these Ge/SiGe asymmetric Fabry-Perot modulators. Several approaches were investigated for forming resonant cavities using high-index-contrast Bragg mirrors around the Ge/SiGe quantum well active regions. These include fabrication on double-silicon-on-insulator reflecting substrates, a layer transfer and etch-back process using anodic bonding, and alkaline etching the backside of the Si substrate to leave suspended SiGe membranes. We present results from each of these modulator structures. The best performance is achieved from the SiGe membrane modulators, which are the first surface-normal resonant-cavity reflection modulators fabricated entirely on standard silicon substrates. Electroabsorption and electrorefraction both contribute to the reflectance modulation. The devices exhibit greater than 10 dB extinction ratio with low insertion loss of 1.3 dB. High-speed modulation with a 3 dB bandwidth of 4 GHz is demonstrated. The moderate-Q cavity (Q~600) yields an operating bandwidth of more than 1 nm and permits operation without active thermal stabilization.

Download or read book Silicon Photonics written by Joel A. Kubby and published by SPIE-International Society for Optical Engineering. This book was released on 2006 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Download or read book Silicon Photonic Modulators for Low power Applications written by Palmer, Robert and published by KIT Scientific Publishing. This book was released on 2015-07-01 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, silicon photonic integrated circuits are combined with electro-optic organic materials for realizing energy-efficient modulators with unprecedented performance. These silicon-organic hybrid Mach-Zehnder modulators feature a compact size, sub-Volt drive voltages, and they support data rates up to 84 Gbit/s. In addition, a wet chemical waveguide fabrication scheme and an efficient fiber-chip coupling scheme are presented.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Annual Commencement written by Stanford University and published by . This book was released on 2000 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of a High Modulation Efficiency Depletion mode Silicon Microring Modulator Based on a Vertical Junction written by Yujia Zhang and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: On-chip optical interconnect is an emerging technology with great potentials to replace traditional electrical interconnects for large-data-operation and low-power-consumption communications of integrated circuit chips. The microring resonator-based modulator has prominent advantages such as compact footprint, low loss, high quality factor (Q-factor), integrating capability, and low power consumption to be a prime component in CMOS- compatible optical interconnect systems. In this thesis, a silicon carrier-depletion mode microring modulator is designed. The design methodology and simulation process are demonstrated in detail. To achieve the highest electro-optic phase modulation efficiency, a vertical doping structure is optimized for pn junction integrated waveguide of the microring modulator. The proposed microring modulator with a small ring radius of 3.7 [mu]m yields a high Q-factor higher than 8000. The simulated electro-optic phase efficiency is as high as 58 pm/V. The microring modulator is designed to achieve a critical coupling for the highest extinction ratio. When operated at low drive voltage from 0 V to -2 V bias, the modulation extinction ratio of the microring modulator reaches 35.56 dB when insertion loss is only about 3 dB. For the fabrication process definition, a simulation of the fabrication process, including implantation, etching, and annealing, is also be provided. Furthermore, a whole design and simulation process for a depletion-mode microdisk modulator with a vertical doping pn junction is also studied and demonstrated in Chapter 9. In the APPENDIX A, a high aspect-ratio through silicon vias fabrication process is demonstrated. Via applying a "hybrid Cu adhesion layer" deposited by E-beam system and sputtering in sequence, through silicon vias with an aspect ratio as high as 1: 15 is successfully achieved after electro-plating. In the APPENDIX B, a design and fabrication process of a 90° optical hybrid based on 150 nm Si3N4 platform is presented.

Download or read book Fibre Optic Communication Devices written by Norbert Grote and published by Springer Science & Business Media. This book was released on 2001-01-26 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.

Download or read book Low Voltage Driven Interleaved Silicon Optical Modulator written by Young Hwa Kim and published by . This book was released on 2019 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Technology of Semiconductor Devices written by Andrew S. Grove and published by . This book was released on 1967 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Photonics II written by David J. Lockwood and published by Springer Science & Business Media. This book was released on 2010-10-13 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.