Download or read book High Power Operation of the In band Diode pumped Nd GdVO4 Lasers written by Mohammad Nadimi and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main obstacle in power scaling of the well-known Nd-doped lasers such as Nd:YVO4 is the thermal lensing effect. One of the proposed solutions to effectively alleviate this problem was based on the reduction of heating within the laser crystal. This was extensively investigated with the Nd:YVO4 crystal by pumping the laser at 914 nm instead of the standard pumping at 808 nm wavelength. In context of high power applications, the crystal of Nd:GdVO4 is an interesting alternative to the Nd:YVO4 as it offers the benefits of good spectral features (similar to Nd:YVO4) and much higher thermal conductivity. However, there is only one proof-of-principle work on continuous-wave (CW) Nd:GdVO4 laser using this pumping approach in which an output power of 3.35 W was reported. The full power scaling potential of the Nd:GdVO4 laser crystal to produce high output power has not been demonstrated to date. In this PhD thesis, I addressed this issue and investigated the high power operation of Nd:GdVO4 lasers under a new pumping wavelength of 912 nm. First, the thermal lensing behaviour of a 1063 nm Nd:GdVO4 was studied, both experimentally and by finite element analysis (FEA) method. The thermal lensing strength in Nd:GdVO4 laser under 912 nm pumping was significantly reduced when compared to the Nd:GdVO4 laser with 808 nm pumping or even Nd:YVO4 laser with 914 nm pumping. The next step of this research was focused on high power operation of Nd:GdVO4 lasers where we achieved 19.8 W of output power at 1063 nm. As a side work in the CW regime of operation, the possibility of discrete wavelength tuning and dual-wavelength operation of the Nd:GdVO4 laser were examined by using an intracavity birefringent filter. Discrete wavelength operation at four different wavelengths was demonstrated. Furthermore, for the first time we were able to demonstrate a dual-wavelength operation of the Nd:GdVO4 laser as a 1063 and 1071 nm wavelength pair. The last aspect of this PhD thesis was concentrated on generation of picosecond pulses. We were able to report on the first semiconductor saturable absorber mirror (SESAM) mode-locked (ML) Nd:GdVO4 laser with 912 nm pumping. The laser generated 10.14 W of average output power with the pulse width of 16 ps at the repetition rate of 85.2 MHz. To the best of our knowledge this is the highest average output power ever obtained from any of the SESAM mode-locked Nd-doped solid-state lasers that were pumped around 912 nm.

Download or read book High Power Diode Lasers written by Roland Diehl and published by Springer Science & Business Media. This book was released on 2003-07-01 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.

Download or read book Controllable Continuous wave Dual wavelength Operation of In band Diode pumped Nd GdVO4 Nd YVO4 Composite Laser written by Chinedu Onyenekwu and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a controllable continuous-wave dual-wavelength diode-pumped laser based on a composite Nd:GdVO4/Nd:YVO4 crystal. Controllability for the pair of spectral output was achieved by changing the operating temperature of the fiber-coupled laser diode pump using a digital temperature controller. The resulting temperature-dictated pumping wavelength provided a precise and turnkey means of intensity control for the two emitted spectral lines as either line showed strong and proportionate intensity change in response to the wavelength of excitation by the pump. The intensity ratio for the pair was in favor of the GdVO4 emission at 1063 nm while pumping at about 912 nm while the YVO4 emission was relatively lower and vice versa while pumping at 914 nm. For power scalability, a low-quantum defect (QD) approach was adopted using in-band pumping. This was specifically performed around the 910 - 914 nm wavelength range considering and corresponding to the longer Nd:GdVO4/Nd:YVO4 absorption bands. Using this efficiency-increasing initiative, the laser produced a maximum output power of 4.48 W with 11.55 W of absorbed power, corresponding to a slope and optical-to-optical efficiency of 43.8 % and 38.8 % respectively. These parameters are notably the highest ever reported compared to all previous works using a similar composite crystal for dual wavelength operation.

Download or read book Diode pumped Nd YLF lasers for high power operation written by Graham John Friel and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Highly Efficient Diode pumped Lasers Based on In band Pumping of Nd YVO4 Crystal written by Tanant Waritanant and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work proposed to study Neodymium-doped laser crystals as an alternative for ultrashort pulse generation with medium output power level and high efficiency. The first section of this thesis focused on the thermal effect which is the main limitation in power scaling. The results showed that the thermal lensing effect is significantly reduced with in-band pumping at 914 nm. Aside from thermal lens effect investigation, discrete wavelength tuning and dual-wavelength operations were demonstrated with intracavity birefringent plates. Mode locking operations with SESAM as saturable absorber was demonstrated under 914 nm pump wavelength for the first time with the highest efficiency to date. The output in mode-locked regime was stable and self-starting with 16 ps pulse duration which can be extended to adjacent emission lines at 1073 nm and 1085 nm. Finally, two important candidates for low quantum defect pumping, Nd:CALYO and Nd:SYSO, were identified and tested for the first time.

Download or read book Diode Lasers written by D. Sands and published by CRC Press. This book was released on 2004-10-30 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The compact size, reliability, and low cost of diode lasers lead to applications throughout modern technology-most importantly in modern optical telecommunication systems. This book presents a comprehensive introduction to the principles and operation of diode lasers. It begins with a review of semiconductor physics and laser fundamentals, before describing the most basic homojunction laser. Later chapters describe more advanced laser types and their applications, including the most recently developed and exotic laser designs. The author's intuitive style, coupled with an extensive set of worked examples and sample problems, make this an outstanding introduction to the subject.

Download or read book Epitaxial Design Optimizations for Increased Efficiency in GaAs Based High Power Diode Lasers written by Thorben Kaul and published by Cuvillier Verlag. This book was released on 2021-04-09 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lasers operated at 935 nm. Target is to increase efficiency at high optical CW powers by epitaxial design. The novel extreme triple asymmetric (ETAS) design was developed and patented within this work to equip diode lasers that use an extremely thin p-waveguide with a high modal gain. An iterative variation of diode lasers employing ETAS designs was used to experimentally clarify the impact of modal gain on the temperature dependence of internal differential quantum efficiency (IDQE) and optical loss. High modal gain leads to increased free carrier absorption from the active region. However, less power saturation is observed, which must then be attributed to an improved temperature sensitivity of the IDQE. The effect of longitudinal spatial hole burning (LSHB) leads to above average non-linear carrier loss at the back facet of the device. At high CW currents the junction temperature rises. Therefore, not only the asymmetry of the carrier profile increases but also the average carrier density in order to compensate for the decreased material gain and increased threshold gain. This carrier non-pinning effect above threshold is found in this work to enhance the impact of LSHB already at low currents, leading to rapid degradation of IDQE with temperature. This finding puts LSHB into a new context for CW-driven devices as it emphasizes the importance of low carrier densities at threshold. The carrier density was effectively reduced by applying the novel ETAS design. This enabled diode lasers to be realized that show minimized degradation of IDQE with temperature and therefore improved performance in CW operation.

Download or read book Efficient CW Nd YLF Laser In band Diode pumped at 908 Nm and Its Thermal Lensing written by Zohreh Sedaghati and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diode-pumped solid-state lasers are highly recommended for a variety of industrial and scientific applications as they can offer high efficiency and excellent beam quality. However, power scaling of these lasers is a challenging task. The main limitation in power scaling of famous neodymium doped lasers such as Nd:YVO4 is the thermal lensing effect. Thermal lensing degrades the output beam quality and in extreme cases can result in crystal fracture. One potential solution to this problem is to reduce the induced heat load inside the gain media by decreasing the quantum defect. This was demonstrated successfully for the Nd:YVO4 laser by pumping the laser at a long wavelength of 914 nm instead of the traditional pumping at 808 nm wavelength. Among the Nd-doped crystals operating in the near infrared range, the crystal of yttrium lithium fluoride (Nd:YLF) is another interesting gain medium as it has the benefits of natural birefringence (can generate naturally polarized laser beam), negative dn/dT (reduces thermal effects) and long upper level lifetime (in favor of Q-switched operation). In this work we used a long wavelength pumping approach and for the first time examined the performance of a continuous-wave Nd:YLF laser at 1047 nm under 908 nm diode pumping. This pumping wavelength reduced the quantum defect by 50% as compared to the conventional 808 nm pumping. The laser produced an output power of 850 mW at 1047 nm with excellent beam quality and 625 mW at 1053 nm. The slope efficiency was ~73.9% and 46% for 1047 and 1053 nm, respectively. Therefore, a considerable power scaling is possible for Nd:YLF crystals owing to the strongly reduced quantum defect and, hence, thermal lensing.

Download or read book Introduction to Laser Diode pumped Solid State Lasers written by Richard Scheps and published by SPIE-International Society for Optical Engineering. This book was released on 2002 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text covers a wide range of material, from the basics of laser resonators to advanced topics in laser diode pumping. The subject matter is presented in descriptive terms that are understandable by the technical professional who does not have a strong foundation in fundamental laser topics.

Download or read book Development of Diode End pumped Nd YLF Lasers at 1314 Nm for High Power Operation written by Roelf Cornelis Botha and published by . This book was released on 2016 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Power Diode Lasers written by Friedrich Bachmann and published by Springer. This book was released on 2007-05-26 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes a five year research project, as well as subsequent results regarding high power diode laser systems and their application in materials processing. The text explores the entire chain of technology, from the semiconductor technology, through cooling mounting and assembly, beam shaping and system technology, to applications in the processing of such materials as metals and polymers. Includes theoretical models, a range of important parameters and practical tips.

Download or read book Investigation of Diode pumped Nd GdVO4 and Nd GdYVO4 Solid state Lasers written by Siang Ping Ng and published by . This book was released on 2006 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Average Power Diode Pumped Solid State Lasers Power Scaling With High Spectral and Spatial Coherence written by and published by . This book was released on 2009 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main program objective was the development of a kilowatt class, cw Nd:YAG diode-laser-pumped solid-state laser (DPSSL) with quantum noise limited amplitude and phase, 24by7 operation capability and the ability to be repaired while in operation. The approach was a master-oscillator power-amplifier (MOPA) laser utilizing a series of zig-zag slab power amplifiers stages. We developed fiber amplifiers at the 200W level to generate power with high optical efficiency that can effectively extract energy from the power amplifier slabs. We also worked on the generation of high average power visible light by developing nonlinear optical materials with large apertures, low photo-refraction and minimal visible induced infrared absorption. The second objective was to develop a 1 joule, pulse-modulated, diffraction limited MOPA laser with less than 1 MHz line-width. A follow-on objective was frequency conversion to 1.5 or 2.0 microns for remote sensing applications. We demonstrated Yb:YAG slab lasers pumped with high brightness laser diodes. Supporting this project was the development of laser diodes operating in the 1.5 micron region for pumping of erbium doped laser hosts, and the synthesis of new low-loss polycrystalline laser host materials for in-band pumping into the upper laser level to improve the laser efficiency at eye-safe wavelengths. We developed orientation patterned Ga-As to frequency convert high peak power 1-micron radiation to eye-safe wavelengths in the mid-infrared for defense applications. The third objective, power scaling and determining the potential for phase-locking of ultra-fast laser systems for a wide range of sensing and machining applications, was demonstrated as well.

Download or read book 888 nm pumping of Nd YVO4 for high power TEM00 lasers written by Louis McDonagh and published by Cuvillier Verlag. This book was released on 2011-02-28 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the last decade, neodymium-doped orthovanadate has established itself as the active material of choice for commercial solid-state lasers emitting in the 1 µm range, with output powers from several hundred milliwatts to a few tens of watts, in continuous-wave, short nanosecond Q-switched, or picosecond modelocked pulsed regimes. Its main advantages over other Nd-doped hosts such as YAG are a large stimulated-emission cross section leading to a high gain, a strong pump absorption allowing the efficient mode-matching of tightly-focused pump light, and a natural birefringence resulting in a continuously polarized output. The main drawbacks, however, are rather poor mechanical characteristics and strong thermal lensing, effectively limiting the maximum applicable pump power before excessively strong and aberrated thermal lensing prevents an efficient operation in a diffraction-limited beam, and ultimately the crystal’s fracture. Put aside the power limitation, the association of vanadate with diode end pumping allows for the realization of highly efficient and reliable laser sources based on well-known technologies, which provides an advantage in terms of manufacturability and cost-effectiveness over other high-potential technologies such as disks and fibers. This thesis introduces a novel pumping technique for Nd:YVO4 that allows for the realization of significantly higher-power laser sources with a high optical-to-optical efficiency and diffraction-limited beam quality, while keeping the benefits of a well-established technology. It consists in pumping at a wavelength of 888 nm instead of the classic 808 nm, providing a low and isotropic absorption, which results in a smooth distribution of the absorbed pump light in long crystals, effectively limiting the deleterious effects of high inversion density such as crystal end-facet bulging, high crystal temperature, aberrated thermal lensing, and upconversion. After presenting vanadate’s spectroscopic and physical characteristics, a complete analysis of the heatgenerating effects is performed, allowing for side-by-side simulations of the thermal effects in practical 808 nm and 888 nm pumped systems, and for an evaluation of their respective thermal lensing behaviors. Continuous-wave operation was thoroughly investigated, first in a multi-transversal mode oscillator to assess the maximum optical efficiency with optimum pump-mode matching and the thermal lensing characteristics. A TEM00 resonator was then developed with a single crystal and one pump diode, providing 60 W of output power with an optical efficiency of 55% and a beam quality of M2 = 1.05. This resonator was symmetrically replicated to form a periodic resonator, providing 120 W of output with the same optical efficiency and beam quality. This two-crystal configuration was then modified to an oscillator-amplifier configuration, providing a single-pass extraction efficiency of 53% and a total oscillator-amplifier output of 117 W without any beam-quality degradation. Intracavity doubling of the one and two-crystal configurations was achieved by inserting a non-critically phase-matched LiB5O3 (LBO) non-linear crystal in the resonator, providing up to 62 W of diffraction-limited green light at 532 nm with low-noise characteristics thanks to a large number of oscillating modes, thus limiting the effects of the “green problem”. A strong industrial interest resides in Q-switched lasers emitting nanosecond pulses, particularly with a high average power, high pulse repetition rate, and pulse durations of a few to several tens of nanoseconds. Achieving high-frequency and short-pulse operation both require a high gain, which explains the domination of Nd:YVO4 over lower-gain materials such as Nd:YAG or Yb:YAG. Thus, an acousto-optically Q-switched oscillator was demonstrated with 50 W output power and 28 ns pulse duration at 50 kHz. Pulse duration, however, is inversely proportional to the pulse energy, so that an increase in repetition rate inevitably results in an almost linear increase in pulse width. A cavity-dumped Q-switched oscillator was built to circumvent this limitation, the pulse length being defined by the cavity roundtrip time and the electro-optic cell switching time. It provided a constant pulse duration of 6 ns up to a repetition rate of 100 kHz and a maximum output power of 47 W. Such short pulse durations are normally available with output powers of a few watts from Q-switched lasers, and conversely Q-switched lasers of similarly high output power deliver pulses of several tens to over 100 ns in duration. There exists another strong interest in high average power quasi-cw picosecond sources, which allow for the efficient generation of green and UV radiation, or even red-green-blue for laser video projection. Passive mode locking with a semiconductor saturable absorber mirror (SESAM) is the preferred technique employed for the stable and self-starting generation of picosecond pulse trains, yet a high gain is necessary for achieving high repetition rates while avoiding the Q-switched mode-locking regime. Thus SESAM mode locking was applied to an 888 nm pumped oscillator, achieving 57 W of output power at a repetition-rate of 110 MHz and a pulse duration of 33 ps. Its output was efficiently amplified in a single pass up to 111 W without any beam quality, temporal, or spectral degradation. The high peak power of 30 kW allowed for the generation of 87 W of second harmonic at 532 nm with an efficiency of 80%, and 35 W of 355 nm third harmonic with a conversion efficiency of 33% in LBO crystals. The wide range of high-power systems demonstrated in this work illustrate the benefits of the optimized pumping of Nd:YVO4 at 888 nm, maintaining its highly-desirable characteristics such as a high gain and a polarized output while extending its power capabilities far beyond regular 808 nm pumped systems. This improvement should allow Nd:YVO4 systems to compete with high-power technologies such as disks and fibers, which often struggle in the generation of short pulses because of their low gain and strong non-linear effects, respectively.

Download or read book The Physics and Engineering of Solid State Lasers written by Yehoshua Y. Kalisky and published by SPIE Press. This book was released on 2006 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explains the mutual influences between the physical and dynamic processes in solids and their lasing properties. This book provides insight into the physics and engineering of solid state lasers by integrating information from several disciplines, including solid state physics, materials science, photophysics, and dynamic processes in solids.

Download or read book High Speed Diode Lasers written by Sergei A Gurevich and published by World Scientific. This book was released on 1998-01-15 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth. Attention is centered on the challenges in creation of high speed and low chirp single mode DFB lasers. Recent progress in mode-locked diode lasers is covered, specifically by the examples of 160 fs pulse generation and appearance of microwave pulse repetition rates. Future trends in increasing of high speed laser performance are also examined.

Download or read book High Power GaAs Based Diode Lasers with Novel Lateral Designs for Enhanced Brightness Threshold and Efficiency written by Mohamed Elattar and published by Cuvillier Verlag. This book was released on 2024-07-26 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs-based 9xx-nm broad-area diode lasers (BALs) offer the highest optical power (Popt) among diode lasers and the highest conversion efficiency (ηE) among all light sources. Therefore, they are widely used in material processing applications (e.g. metal cutting), which additionally require high beam quality (i.e. low beam parameter product BPP), typically limited in BALs along the lateral axis (BPPlat). Enhancing BAL performance is dependent on identifying the thermal and non-thermal limiting mechanisms, and implementing design changes to minimize their effects. In this work, two novel approaches based on lateral structuring are developed, aiming to overcome different limiting mechanisms acting along the lateral axis. First, the enhanced self-aligned lateral structure (eSAS) is based on integrating structured current-blocking layers outside the BAL stripe to centrally confine current and charge carriers, thereby suppressing lateral current spreading and lateral carrier accumulation. Two eSAS variants are optimized using simulation tools, then realized in multiple wafer processes, followed by characterization of mounted BALs. eSAS BALs exhibit state-of-the-art Popt and lateral brightness (Popt/BPPlat), with clear benefits over standard gain-guided BALs in terms of threshold, BPPlat and peak ηE. The second approach is chip-internal thermal path engineering, based on structured epitaxial layers replaced outside the stripe by heat-blocking materials to centrally confine heat flow. This flattens the lateral temperature profile (i.e. reduces thermal lensing) around the active zone, which is associated with enhanced brightness. Finite-element thermal simulations are used to estimate the benefits of this approach, thereby motivating its practical realization in future studies.