Download or read book High power GaAs FET Amplifiers written by John L. B. Walker and published by Artech House Microwave Library. This book was released on 1993 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.

Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

Download or read book Solid state Microwave High power Amplifiers written by Franco Sechi and published by Artech House. This book was released on 2009 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.

Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book High Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Download or read book Gallium Arsenide IC Applications Handbook written by and published by Elsevier. This book was released on 1995-09-27 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list

Download or read book Theory of Power Matching written by János Ladvánszky and published by Springer. This book was released on 2019-05-13 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the development of the power matching problem. It starts with the derivative-free proof of conjugate matching, goes through the nonlinear, resistive maximum power theorem and its reversal, extension of the concept of equivalence in the case of nonlinear circuits, application of the nonlinear, and resistive maximum power theorem for diode measurement. The author treats practically important special cases of nonlinear, dynamic power matching with applications, and the most general solution that is not realizable.

Download or read book Scientific Bulletin written by and published by . This book was released on 1979 with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Innovations in Telecommunications Part A written by Jamal Manassah and published by Elsevier. This book was released on 2012-12-02 with total page 575 pages. Available in PDF, EPUB and Kindle. Book excerpt: Innovations in Telecommunications, Part A contains the proceedings of the symposium on "Innovations in Telecommunications" of the International Symposium Series held in Kuwait in April 1981 and sponsored by the Kuwait Foundation for the Advancement of Science. The symposium provided a forum for reviewing advances in research, development, demonstration, design, manufacture, field testing, and application in the field of telecommunications. Both the state of the art and the cutting edge of technology in telecommunications are given emphasis. Comprised of 17 chapters, this book is arranged in five major sections: signal processing; devices and microfabrication techniques; terrestrial communications; satellite communication; and applications. The discussion begins with an assessment of trends in electronic information transfer, followed by a description of a bandwidth- and power-efficient modulation system that combines convolutional encoding and phase modulation. Subsequent chapters deal with voice processing techniques; image processing for communication; developments in switching; and devices such as those for transmission and delta modulation. The final section is devoted to terrestrial communications and covers microwave systems, mobile and lightwave communications, and coaxial cable systems for land and sea. This monograph will be of interest to those in the telecommunications industry.

Download or read book Microwave Active Devices and Circuits for Communication written by Subhash Chandra Bera and published by Springer. This book was released on 2018-12-11 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering.