Download or read book High Performance Low Temperature Polysilicon Thin Film Transistors with Nano wire Structure written by 黃柏鈞 and published by . This book was released on 2007 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Polysilicon Thin Film Transistors in Advanced Display Technologies written by and published by . This book was released on 2000 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this final project report, we detail the work completed in developing a polysilicon thin film transistor (TFT) technology that was successfully applied in fabricating a working VGA Active Matrix Organic Light Emitting Diode (AMOLED) display prototype. Using the high throughput, low cost method of Rapid Thermal Processing (RTP), we achieved glass compatible crystallization temperatures of polysilicon. We identify that RTP results in superior TFT performance uniformity, which is critical for fabrication of AMOLEDs. We successfully developed and integrated novel microelectronic processes and techniques while fabricating AMOLED displays, culminating in the demonstration of a VGA AMOLED prototype display operated at a brightness of 101 nits. Using our high throughput, low cost process polysilicon TFT technology, we fabricated display driver circuits, including low temperature shift registers that run at clock frequencies as high as 20 MHz. Finally, several processing issues that were investigated in order to improve the performance of AMOLED displays are described. This includes work on low temperature silicides for TFTs, a novel hillock-free aluminum metallization, and the ability of this aluminum metallization to form ohmic contacts to indium tin oxide.
Download or read book Modeling of Low Temperature Polysilicon Thin Film Transistors written by 邱柏倫 and published by . This book was released on 2019 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors 10 TFT 10 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2010-10 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This special issue of ECS Transactions is for the 20th anniversary of the Thin Film Transistor (TFT) symposium series. Renowned TFT experts in related materials, processes, devices, and applications from the world serve as invited speakers to review the technology and science progress in the past two decades. Selected contributed papers are also included in this issue.
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Nanoelectronic Device Applications Handbook written by James E. Morris and published by CRC Press. This book was released on 2017-11-22 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
Download or read book Thin Film Transistor Technology 8 written by Yue Kuo and published by The Electrochemical Society. This book was released on 2006 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue includes funadmental and applied topics on materials, processes, devices, circuits, and new and novel applicaitons related to TFTs.
Download or read book Polycrystalline Silicon Thin film Transistor Technology for Flexible Large area Electronics written by Yeh-Jiun Tung and published by . This book was released on 2001 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanomaterials for Flexible Technologies written by Yugang Sun and published by William Andrew. This book was released on 2010-05-20 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an overview of the strategies to generate high-quality films of one-dimensional semiconductor nanostructures on flexible substrates (e.g., plastics) and the use of them as building blocks to fabricating flexible devices (including electronics, optoelectronics, sensors, power systems). In addition to engineering aspects, the physics and chemistry behind the fabrication and device operation will also be discussed as well. Internationally recognized scientists from academia, national laboratories, and industries, who are the leading researchers in the emerging areas, are contributing exceptional chapters according to their cutting-edge research results and expertise. This book will be an on-time addition to the literature in nanoscience and engineering. It will be suitable for graduate students and researchers as a useful reference to stimulate their research interest as well as facilitate their research in nanoscience and engineering. - Considers the physics and chemistry behind fabrication and device operation - Discusses applications to electronics, optoelectronics, sensors and power systems - Examines existing technologies and investigates emerging trends
Download or read book High speed Thin film Transistors on Single crystalline Unstrained and Strained Si based Nanomembranes written by Hao-Chih Yuan and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation on High Performance of Poly Si and AP PECVD Fabricated In Ga Zn O Thin Film Transistors with Low Temperature Technology written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Novel Device Structure for Low Temperature Polysilicon TFTs With Controlled Gain Growth in Channel Regions written by Li-Jung Cheng and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs electrical characteristics. During excimer laser irradiation this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller/thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm(2)/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
Download or read book Toward Quantum FinFET written by Weihua Han and published by Springer Science & Business Media. This book was released on 2013-11-23 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
Download or read book Novel Low Temperature Polysilicon Thin film Transistors for System on glass Large area Microelectronic Applications written by Chunxiang Zhu and published by . This book was released on 2000 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transparent Electronics written by Antonio Facchetti and published by John Wiley & Sons. This book was released on 2010-03-25 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.
Download or read book Thin Film Transistor Technologies 14 TFTT 14 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2018-09-21 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Performance Thin Film Transistors Using Ni Silicide for Liquid Crystal Displays written by Jin Jang and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ni-silicide of a sheet resistance of 7 Omega/square can be formed at 230 deg C on n(+) a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi2 precipitates can be formed on a-Si:H at around 350 deg C and needlelike Si crystallites are grown as a result of the migration of the NiSi2 precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 deg C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 sq cm/Vs has been demonstrated using the low temperature poly-Si.
