Download or read book High Growth Rate Epitaxial Silicon and Silicon germanium Alloys on Silicon by Plasma Enhanced Chemical Vapor Deposition PECVD written by Tien H. Nguyen and published by . This book was released on 1999 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys written by and published by . This book was released on 1995 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Download or read book Silicon Germanium Alloys for Photovoltaic Applications written by Ammar Nayfeh and published by Elsevier. This book was released on 2023-03-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification. Includes a summary of SiGe alloys material properties relevant for solar research, all compiled at one place Presents various simulation models and analysis of SiGe material properties on solar cell performance Includes a cost-analysis for III-V/Si solar cells via SiGe alloys
Download or read book Epitaxial Growth of Si Ge Sn Alloys for Optoelectronic Device Application written by Aboozar Mosleh and published by . This book was released on 2015 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore's law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been built. However, due to the indirect bandgap nature of Si, its optical characteristics fall short compared to similar III-IV semiconductors. The efforts in III-V incorporation on Si substrate have not been successful due to the incompatibility of the growth with complementary metal oxide semiconductor processing. Germanium has been studied in order to develop a Si compatible technology and it has been shown that a direct bandgap material is achievable by alloying Sn in Ge. Further investigations on Si-Ge-Sn material system showed its viability as a technology that can be used for fabrication of Si-compatible light source and detectors. The work presented in this dissertation is focused on the low temperature growth of Si-Ge-Sn alloys. High quality crystalline homoepitaxial silicon films were deposited at 250 °C using a plasma-enhanced chemical vapor deposition (PECVD) system. Strain-relaxed Ge and SiGe films were also grown on Si substrate at 350-550 °C in a reduced pressure CVD system. Commercial precursors of silane and germane were used to grow the films at different chamber pressures. Germanium-tin and silicon-germanium-tin alloys were grown by a cold-wall chemical vapor deposition system at low temperatures (300-450 °C) directly on Si substrates. Two different delivery systems were adopted for the delivery of stannic chloride and deuterated stannane as Sn precursors along with silane and germane. Crystallinity and growth quality of the films were investigated through material characterization methods including X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Elemental characterization of the films was done using Rutherford backscattering measurement and energy-dispersive X-ray spectroscopy. Moreover, optical characterizations were performed using Raman spectroscopy and photoluminescence on the samples to investigate Sn incorporation in the films. Additionally, compressively strained (
Download or read book Chemical Vapor Deposition of Epitaxial Silicon germanium carbon Alloys Using Cyclopropane as a Carbon Source Gas written by James R. Dekker and published by . This book was released on 1998 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Download or read book Epitaxial Growth of Silicon and Erbium Doped Silicon by Plasma Enhanced Chemical Vapor Deposition written by Matthew W. Deming and published by . This book was released on 1998 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Download or read book Silicon germanium Alloy Layers Formed by Solid Phase Epitaxial Growth of Germanium Ion Implanted Silicon written by Prayoon Songsiriritthigul and published by . This book was released on 1997 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Strain Metrology written by Terence K. S. Wong and published by Bentham Science Publishers. This book was released on 2012 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book Microscopy of Semiconducting Materials written by A.G Cullis and published by CRC Press. This book was released on 2000-01-01 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots. This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
