Download or read book High Energy Electron Radiation Degradation of Gallium Arsenide Solar Cells written by Don William Gold and published by . This book was released on 1986 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: A need existed to perform high energy electron irradiation experiments on gallium arsenide solar cells. To support this research, an automated solar cell test facility was constructed, gallium arsenide solar cells were obtained, and the Naval Postgraduate School LINAC facility was utilized to irradiate the cells to selected fluence levels at 20 MEV energies. Equivalent damage coefficients were calculated, and it was found that the average maximum power output decreased by 50% following a cumulative irradiation by electrons to a total fluence of 1 X 10 to the 15th power sq. cm.
Download or read book High Energy Electron Radiation Degradation of Gallium Arsenide Solar Cells written by Don W. Gold and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A need existed to perform high energy electron irradiation experiments on gallium arsenide solar cells. To support this research, an automated solar cell test facility was constructed, gallium arsenide solar cells were obtained, and the Naval Postgraduate School LINAC facility was utilized to irradiate the cells to selected fluence levels at 20 MEV energies. Equivalent damage coefficients were calculated, and it was found that the average maximum power output decreased by 50% following a cumulative irradiation by electrons to a total fluence of 1 X 10 to the 15th power sq. cm.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by Joseph A. Bruening and published by . This book was released on 1993 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book A Simple Model of Space Radiation Damage in GaAs Solar Cells written by John William Wilson and published by . This book was released on 1983 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Solar Cell Radiation Handbook written by B. E. Anspaugh and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Simple Model of Space Radiation Damage in GaAs Solar Cells written by John William Wilson and published by . This book was released on 1983 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book Medium Energy Proton Radiation Damage to AlGa As GaAs Solar Cells written by and published by . This book was released on 1982 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Cell High Efficiency and Radiation Damage written by and published by . This book was released on 1977 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Experimental Investigation of the Effects of High Energy Electron Radiation Damage to Single Crystal N type Gallium Arsenide Using Hall Measurement Techniques written by Michael Patrick Healy and published by . This book was released on 1973 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annealing of Radiation Damaged Gallium Arsenide Solar Cells by Laser Illumination written by Richard Dillon Kramer and published by . This book was released on 1994 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research, preliminary results of a new approach for annealing previously irradiated Gallium Arsenide solar cells is reported. This technique examines the use of laser illumination to induce Forward-Biased current annealing. Five GaAs solar cells were irradiated with 65 MeV electrons at varying fluence levels. Visible laser light produced a 0.5 A/sq cm forward-biased current density and raised the solar cell temperature by 30 deg C. Ten to fifteen percent recovery of degraded parameters was achieved in four of the five tested cells. The results show that a laser can produce some annealing in radiation damaged GaAs solar cells. Further investigation into the results also indicate that the 65 MeV energy level of the electron irradiation could have caused unrecoverable permanent damage to the solar cells. Follow up research of this annealing technique should be conducted on GaAs cells that are being irradiated at a lower energy level as well as lower fluence level. Repetitive annealing of lightly damaged cells in previous research has provided appreciative recovery using forward bias current techniques. One can expect similar results using the laser induced annealing technique proposed in this research.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy Techniques written by and published by . This book was released on 1991 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E14 and 1E15 electrons/sq cm. The process of annealing included thermal annealing at 90 C with forward bias current and thermal annealing alone (for GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.
Download or read book Annealing of Radiation Damaged Gallium Arsenide Solar Cells by Laser Illumination written by Richard Dillon Kramer and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research, preliminary results of a new approach for annealing previously irradiated Gallium Arsenide solar cells is reported. This technique examines the use of laser illumination to induce Forward-Biased current annealing. Five GaAs solar cells were irradiated with 65 MeV electrons at varying fluence levels. Visible laser light produced a 0.5 A/sq cm forward-biased current density and raised the solar cell temperature by 30 deg C. Ten to fifteen percent recovery of degraded parameters was achieved in four of the five tested cells. The results show that a laser can produce some annealing in radiation damaged GaAs solar cells. Further investigation into the results also indicate that the 65 MeV energy level of the electron irradiation could have caused unrecoverable permanent damage to the solar cells. Follow up research of this annealing technique should be conducted on GaAs cells that are being irradiated at a lower energy level as well as lower fluence level. Repetitive annealing of lightly damaged cells in previous research has provided appreciative recovery using forward bias current techniques. One can expect similar results using the laser induced annealing technique proposed in this research.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Changes in Minority carrier Lifetime in Silicon and Gallium Arsenide Resulting from Irradiation with 22 and 40 MeV Protons written by Marvin Eddleman Beatty and published by . This book was released on 1969 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy Update written by and published by . This book was released on 1982 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Cell High Efficiency and Radiation Damage 1979 written by and published by . This book was released on 1979 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
