Download or read book High Efficiency LOW AM PM 6W C band MMIC Power Amplifier for a Space Radar Program written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper describes the design of a compact C-band MMIC power amplifier. Intensive non-linear and electro-magnetic simulations with accurate table-based models allowed the chips to achieve very good performance. A linear gain of 28 dB, an output power greater than 6 W with 50 % of power added efficiency and 3°/dB of AM/PM conversion at 2.5 dB gain compression have been measured over production at ambient temperature in the useful bandwidth.

Download or read book 30th European Microwave Conference written by and published by . This book was released on 2000 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conference Proceedings written by and published by . This book was released on 2000 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book X band High PAE MMIC HPA for Space Radar Applications written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A MMIC 2-Watt 5-stage amplifier (HPA) has been successfully designed in one foundry run. This HPA, developed for a space Radar application at X band, has a 40dB linear gain, an output power of 34dBm with a 32% associated Power Added Efficiency (with a maximum of 39%) and uses the THOMSON TCS HP07 technology (Lg=0.7um) which is on the way to be qualified for Space Application. The tests have been performed both on wafer and in package.

Download or read book A Revolutionary High Efficiency Class F MMIC Amplifier at Ka band written by Michel Ann Reece and published by . This book was released on 2003 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highly efficient, compact solid-state power amplifier (SSPA) MMICs are required for today's expanding satellite communication applications at Ka-band frequencies. The need for higher data rates, reduced cost, and submicron sizes makes SSPA technologies at Ka-band very attractive. A technique that can be employed to realize high efficiency operation of power amplifiers at microwave frequencies is to employ a Class F amplifier configuration. In order to obtain Class F performance, the output circuit is tuned to pass the fundamental, short (suppress) the second (even) harmonics, and provide an open to the third (odd) harmonics. Thus, providing theoretically an efficiency of 100%. However, at microwave frequencies, transistors are far from ideal. Accurate models are needed to predict the transistor's exotic performance in a circuit. Artificial neural network (ANN) models are a choice alternative for MMIC circuit designers to implement. ANNs have the capability to learn generalize patterns in data and model high linearities. Recently, research has been done that has proved that Knowledge-based Neural Networks (KBNN) are capable of modeling a transistor's small-signal and large-signal characteristics and are quite attractive for implementation in CAD packages. This research employs the use of Class F matching techniques in several prototype single-stage amplifier designs in order to achieve improved efficiency performance at Ka-band frequencies. In addition, Class F MMIC amplifier designs at C-band are also discussed to verify the feasibility of approach. Advanced knowledge-based neural network modeling techniques are implemented for a 300um device in a .25um GaAs PHEMT technology. A KBNN model extraction methodology is derived and integration into a commercial computer-aided (CAD) tool is discussed. A design methodology is developed and utilized to achieve record measured performance of 62% Power-Added-Efficiency at 31 GHz with a gain of 8.7dB and an output power of 18.3dBm. A secondary purpose of this research discusses the impact of the implementation of knowledge-based neural network modeling technique to the design process. -- Abstract.

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book Solid state Microwave High power Amplifiers written by Franco Sechi and published by Artech House. This book was released on 2009 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.

Download or read book Ku band High Efficiency GaAs MMIC Power Amplifiers written by and published by . This book was released on 1988 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Journal written by and published by . This book was released on 2007 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ka Band GAAS Fet Monolithic Power Amplifier Development written by National Aeronautics and Space Adm Nasa and published by . This book was released on 2018-10-28 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract. Saunier, Paul and Tserng, Hua Quen Glenn Research Center...

Download or read book A Ka Band Wide Bandgap Solid State Power Amplifier written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-24 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss 30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss

Download or read book A Compact Broadband High Efficient X Band 9 Watt PHEMT MMIC High power Amplifier for Phased Array Radar Applications written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper the development and measurement results of a compact broadband 9-Watt high-efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the-art performance: an average output power of 9 Watt, a gain of 20 dB and an average Power Added Efficiency of 35% over a relative bandwidth of 40% at X-band. The amplifier is realised in a pseudomorphic HEMT GaAs MMIC technology developed by the Fraunhofer Institute for Applied Solid State Physics (FhG-IAF) in the scope of the WEAG/TA1/CTP8.1 program.

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1995 with total page 1476 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Efficiency Class F MMIC Power Amplifiers at Ku Band written by and published by . This book was released on 2005 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.

Download or read book Fabrication of Very High Efficiency 5 8 Ghz Power Amplifiers Using Algan Hfets on Sic Substrates for Wireless Power Transmission written by National Aeronautics and Space Adm Nasa and published by Independently Published. This book was released on 2018-09-19 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.Sullivan, GerryMarshall Space Flight CenterMICROWAVE AMPLIFIERS; SEMICONDUCTORS (MATERIALS); GALLIUM ARSENIDES; GALLIUM NITRIDES; RADIO FREQUENCIES; SILICON CARBIDES; TRANSISTORS; COOLING; ENERGY GAPS (SOLID STATE); FABRICATION; HETEROJUNCTIONS

Download or read book MMIC Applications to Space Equipment written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We demonstrated high power and low noise GaAs MMIC amplifiers for K- to Ka-band space equipment. For high power application, two different approaches were adopted. A SIV(Source Island Via-hole) FET high power amplifier achieved a saturation output power of 33 dBm with a power added efficiency of 26% at 21 GHz, which also provided an output power as high as 32 W when 16 chips of them were power-combined in an SSPA for an on-board transponder. On the other hand, a p-HEMT high power amplifier using lumped element matching circuits provided a P1dB of 31 dBm with a linear gain of 11.5 dB at 19 GHz. For low noise application, p-HEMT low noise amplifier delivered a super low noise Figure of 1.0 dB with an associated gain of 18 dB at 32 GHz. Gamma ray irradiation hardness of mm-wave MMIC LNAs was also investigated, up to 1E7 rad, which indicated that the p-HEMT MMIC LNA has sufficient gamma ray hardness in the space environment.

Download or read book 10W C BAND highly efficient HYBRID MMIC amplifier written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A very high efficient, low distortion C-band Hybrid-MMIC Amplifier using linear and non-linear models of the PHEMT devices has been developed. Double stage Hybrid-MMIC amplifier fabricated with 2x3.6mm gate width PHEMT and 2x12mm gate width PHEMT exhibits a power output of 40.2 dBm at 2dB of gain compression, a linear gain of 26dB and an associated PAE of greater than 46% in the frequency range of 3.8-4.2GHz. These excellent results are obtaineded by developing an accurate non-linear model of the PHEMT device and optimizing the output-matching network of the amplifier by using a high dielectric substrate with low insertion loss.