Download or read book High Bias Studies on Metal Insulator Metal and Metal Insulator Semiconductor Tunnel Junctions written by Steven Wade Depp and published by . This book was released on 1972 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tunnel junctions were fabricated on the grown-oxides of both cleaved single-crystal silicon and evaporated aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and self-energy structure is observed, while at intermediate biases tunneling into interface states is identified in p-type silicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model' in particular, aluminum junctions with lead counterelectrodes show both anomalous structure and hysteresis in their I-V characteristics. To explain this behavior, a model is proposed in which (responant) tunneling proceeds via the energy levels of mobile impurities in the barrier. Using this model, the hysteresis data is analyzed in detail in order to extract parameters describing the position and energy distribution of the impurities. These parameters obtained from the hysteresis data are found to simultaneously predict the anomalous I-V structure, indicating the common origin of both effects. (Author).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1973 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book STAR written by and published by . This book was released on 1973 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Performance and Reliability of Insulator for Nanometer Metal insulator semiconductor Field Effects Transistors written by Hyeon-Seag Kim and published by . This book was released on 1998 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Minority Carrier Response in a Metal insulator semiconductor Structure written by Fariborz Ghoorkhanian and published by . This book was released on 1980 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Naval Research Reviews written by and published by . This book was released on 1986 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conductance in Tunnel Metal insulator semiconductor Structures written by Albert S. Waxman and published by . This book was released on 1967 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book THE METAL INSULATOR METAL JUNCTION written by GWYNN H. SUITS and published by . This book was released on 1954 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Micro and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Download or read book Characteristics of Metal oxide metal Devices written by Mordehai Heiblum and published by . This book was released on 1978 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Solid State Electronics written by Chih-Tang Sah and published by World Scientific Publishing Company. This book was released on 1991-10-30 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is perhaps the most comprehensive undergraduate textbook on the fundamental aspects of solid state electronics. It presents basic and state-of-the-art topics on materials physics, device physics, and basic circuit building blocks not covered by existing textbooks on the subject. Each topic is introduced with a historical background and motivations of device invention and circuit evolution. Fundamental physics is rigorously discussed with minimum need of tedious algebra and advanced mathematics. Another special feature is a systematic classification of fundamental mechanisms not found even in advanced texts. It bridges the gap between solid state device physics covered here with what students have learnt in their first two years of study. Used very successfully in a one-semester introductory core course for electrical and other engineering, materials science and physics junior students, the second part of each chapter is also used in an advanced undergraduate course on solid state devices. The inclusion of previously unavailable analyses of the basic transistor digital circuit building blocks and cells makes this an excellent reference for engineers to look up fundamental concepts and data, design formulae, and latest devices such as the GeSi heterostructure bipolar transistors. This book is also available as a set with Fundamentals of Solid-State Electronics — Study Guide and Fundamentals of Solid-State Electronics — Solution Manual.
Download or read book A Study of Thin Film Metal Insulator semiconductor Structures written by Steven David Mittleman and published by . This book was released on 1966 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics of Semiconductor Devices written by Dilip K Roy and published by Universities Press. This book was released on 2004 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Studies of Metal insulator semiconductor Structures written by Fey Lin and published by . This book was released on 1988 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Best of Soviet Semiconductor Physics and Technology written by Mikhail Levinshtein and published by Springer Science & Business Media. This book was released on 1991-02 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Culled from the thousands of papers published in American Institute of
Download or read book Photon assisted Electron Tunneling in Metal insulator metal Rectenna Structures written by Shuo Sun and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum physics has had a remarkable development since the last century. We study novel metal-insulator-metal structure configurations for finding broadband and ultrafast response photodetectors and alternative choices to conventional solar cells. If two dissimilar electrodes are separated by an insulator that is sufficiently thin, electrons can tunnel through the gap region by means of quantum tunneling. Electron tunneling through the insulating gap is driven by a bias voltage or an electromagnetic field. The resulting electrical current is described using the photon-perturbation tunneling model. For the right choice of materials, the tunneling current can be asymmetric and there is a net rectified current through the insulator junction. Due to this property, the devices have been called rectennas and many experiments have been performed in the radio frequency regime. More recently rectenna experiments have been extended in the near-infrared regime. Semiconductor diodes have many imperfections such as heat problems and relatively slow response, while metal-insulator-metal devices have less heat problem issues and have response time of carriers in the order of femtoseconds, which can be faster than the period of oscillation of the electromagnetic field. We have applied the transfer matrix method and the Wentzel, Kramers, Brillouin approximation to solve the SchroÌ8dinger equation to find the electron tunneling probability and to predict the current-voltage characteristics of a metal-insulator-metal structure. This, along with the density of states, the Fermi occupation probability, and the quantum confinement effect is used to derive the dark current density for the metal-insulator-metal diode. The illuminated current-voltage characteristics is described by the photon-perturbation theory at high optical frequencies. Upon combining classical and semiclassical pictures of photodetection, a photon-perturbation tunneling model is presented, to fully uncover the interaction between electron and photon field. The electrons are excited and quantized as quasi-particles, this phenomenon is the so-called quantum effect. We validate the theory for dark current and illuminated current with experiments with the goal of calculating the current responsivities. Metal-insulator-metal Au-TiO2-Ti diodes are designed and fabricated in-house using photolithography, along with electron beam evaporation and sputter depositions. Further research is needed to develop metal-insulator-metal devices into practical solar energy harvesters.
