Download or read book Heavily Carbon Doped Gallium Arsenide Grown by Chemical Beam Epitaxy written by Simon Phillip Westwater and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth and Doping of Indium Gallium Arsenide and Gallium Arsenide with Carbon Tetrachloride and Silane Using Metalorganic Chemical Vapor Deposition written by Brian T. Hemmelman and published by . This book was released on 1996 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Download or read book Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy written by Susan C. Palmateer and published by . This book was released on 1982 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Carbon Doping in Gallium Arsenide Grown by Metalorganic Chemical Vapor Deposition written by Hyukju Jay Moon and published by . This book was released on 1990 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth Characterization and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Beam Epitaxy CBE and Laser enhanced CBE of GaAs and InGaAs Using Novel Gas Sources written by Haike Dong and published by . This book was released on 1995 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical Cavity Surface Emitting Lasers written by Carl W. Wilmsen and published by Cambridge University Press. This book was released on 2001-11-12 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 1999, provides a comprehensive description of the physics, design, fabrication, characterization, and applications of vertical-cavity surface-emitting lasers.

Download or read book Proceedings of the Symposium on High Speed III V Electronics for Wireless Applications and the Twenty Fifth State of the Art Program on Compound Semiconductors SOTAPOCS XXV written by F. Ren and published by The Electrochemical Society. This book was released on 1996 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Beam Epitaxial Regrowth Etching and Doping of III V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors written by Nein-Yi Li and published by . This book was released on 1997 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1992 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book JJAP written by and published by . This book was released on 1998 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Solid State Engineering written by Manijeh Razeghi and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Solid State Engineering is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.

Download or read book Fundamentals of Solid State Engineering written by M. Razeghi and published by Springer Science & Business Media. This book was released on 2002 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers."--Publisher's website.

Download or read book Ii Vi Semiconductor Blue Green Light Emitters written by and published by Academic Press. This book was released on 1997-03-13 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides one of the first comprehensive reviews combining recent breakthroughs in blue/green semiconductor lasers based on II-VI materials and fundamentally important issues about the development and extension of these lasers to commercial applications. These lasers are on the cutting-edge of technology and could revolutionize areas such as optical information storage and color displays in the next few years.An important focus of this book is on the recent laboratory development of an entirely new class of diode lasers, based on a different family of semiconductor materials, which emit at much shorter wavelengths in the green and blue portion of the spectrum.These new and exciting developments in optoelectronics, which are still undergoing laboratory testing, have the potential of providing a major increase in storage capacity over current CD technology.Besides applications in high-density digital optical storage, other possible aplications for the compact blue-green lasers will be in areas ranging from flat panel displays to multicolor printing to medical diagnostics. - Details practical issues of the growth of laser structures by molecular beam epitaxy by pioneers in the industry - Explains how the barriers of doping and electrical contact were overcome by using wide bandgap II-VI semiconductors - Documents thirty years of research