Download or read book Hafnium doped Tantalum Oxide High k Gate Dielectric Films for Future CMOS Technology written by Jiang Lu and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-dopedTaOx), has been studied for the application of the future generation metal-oxide semiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Å tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 Å TaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.
Download or read book Zirconium Doped Tantalum Oxide High k Dielectric Films for MOS Devices written by S.V. Jagadeesh Chandra and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Zirconium doped Tantalum Oxide High k Gate Dielectric Films written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaO[subscript]x doped with Zr, was deposited and studied. The film's electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaN[subscript]x) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.
Download or read book Physics and Technology of High k Gate Dielectrics I written by Samares Kar and published by . This book was released on 2003 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doped Tantalum Oxide High K Dielectric Thin Films written by Joseph Patrick Donnelly and published by . This book was released on 2000 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 924 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-11-21 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Download or read book Electrical and Material Characteristics of Hafnium based Multi metal High k Gate Dielectrics for Future Scaled CMOS Technology written by Se Jong Rhee and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Sputtered Hafnium Oxides for Gate Dielectric Applications in Integrated Circuits written by Daniel J. Jaeger and published by . This book was released on 2006 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This work investigated high permittivity hafnium based dielectric films for use in future generation metal oxide semiconductor field-effect transistor (MOSFET) technologies. For the sub-100 nm MOS structure, the conventional SiO2 gate dielectric required is becoming too thin (
Download or read book Charge Trapping Characterization Methodology for the Evaluation of Hafnium based Gate Dielectric Film Systems written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Scaling of advanced CMOS device dimensions, as set forth for future technology nodes by the International Technology Roadmap for Semiconductors (ITRS), will require reduction of the equivalent oxide thickness (EOT) of gate dielectrics below a point that can be physically realized using silicon dioxide. In order to continue EOT scaling below ~1.5 nm and reduce gate leakage current, higher dielectric constant materials will be needed to replace SiO2. Hafnium-based dielectrics are being widely investigated as potential candidates for the gate dielectric application. Their charge trapping characteristics were identified as a primary issue preventing the introduction of Hf-based materials into CMOS technology, potentially causing threshold voltage instability and mobility degradation. Several measurement techniques can be used to study and quantify charge trapping: Capacitance-Voltage (C-V) hysteresis, alternating stress and sense Vfb/Vt instability, charge pumping, and fast transient Id-Vg measurement. While each of these techniques can provide information on specific aspects of the charge trapping phenomenon, some measurements are more convenient (e.g., less time consuming), and some may be more sensitive for resolving subtle differences between the experimental samples. In particular, C-V hysteresis measurements can be used to monitor Vfb shifts for evaluation of hysteresis. A more quantifiable technique that uses a constant voltage gate dielectric stress (CVS) with interspersed limited-voltage-range C-V measurements around flatband can be used. Although systematic, this technique results in the de-trapping of some of the charge between the stress and sense sequence. A more useful approach is the charge pumping (CP) technique. Fixed-amplitude charge pumping (FA CP) measures interface state densities, whereas variable-amplitude (VA CP) measures trap densities in the high-k bulk. However, interpretation of the data can be complicated due to the gate and source/drain lea.
Download or read book Manufacturable Process Tool for High k Metal Gate written by Aarthi Venkateshan and published by VDM Publishing. This book was released on 2008-11-01 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: Off state leakage current related power dominates the CMOS heat dissipation problem of state of the art silicon integrated circuits. In this study, this issue has been addressed in terms of a low-cost single wafer processing (SWP) technique using a single tool for the fabrication of high- dielectric gate stacks for sub-45 nm CMOS. A system for monolayer photoassisted deposition was modified to deposit high-quality HfO2 films with in-situ clean, in-situ oxide film deposition, and in-situ anneal capability. The system was automated with Labview 8.2 for gas/precursor delivery, substrate temperature and UV lamp. The gold-hafnium oxide-aluminum (Au-HfO2-Al) stacks processed in this system had superior quality oxide characteristics with gate leakage current density on the order of 1 x 10-12 A/cm2 @ 1V and maximum capacitance on the order of 75 nF for EOT=0.39 nm. Achieving low leakage current density along with high capacitance demonstrated the excellent performance of the process developed. Detailed study of the deposition characteristics such as linearity, saturation behavior, film thickness and temperature dependence was performed for tight control on process parameters. Using Box-Behnken design of experiments, process optimization was performed for an optimal recipe for HfO2 films. UV treatment with in-situ processing of metal/high- dielectric stacks was studied to provide reduced variation in gate leakage current and capacitance. High-resolution transmission electron microscopy (TEM) was performed to calculate the equivalent oxide thickness (EOT) and dielectric constant of the films. Overall, this study shows that the in-situ fabrication of MIS gate stacks allows for lower processingcosts, high throughput, and superior device performance.
Download or read book Rapid Thermal and Other Short time Processing Technologies written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2000 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Download or read book Tantalum Oxide Thin Films for High k Dielectric Applications written by Kyunghoon Min and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Dielectric Constant Oxide and Metal Gate Materials for Future CMOS Integrated Circuits written by Lin Wang and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of High K Gate Dielectrics Based on HfO2 and TiO2 for CMOs Application written by Sanghyun Lee and published by . This book was released on 2007 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Hafnium Oxide, Titanium Oxide, Hafnium Silicon Oxynitride, CMOs, High K, Gate Dielectrics.
