Download or read book Growth of Silicon 1 x Germanium x from Disilane and Digermane by Gas source Molecular Beam Epitaxy written by Thomas Richard Bramblett and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2 $\times$ 1 substrates from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\sb{\rm s}$(300-950$\sp\circ$C) and impingement flux J (0.3-$7.7\times10\sp{16}$ cm$\sp{-2}$ s$\sp{-1}$). R(T$\sb{\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6,$ respectively. The growth rate of SiGe alloys R$\sb{\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\sb{\rm SiGe}$ increased with Ge surface coverage $\theta\sb{\rm Ge}$ due to the lower activation energy of H$\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\sb{\rm SiGe}$ decreases with $\theta\sb{\rm Ge}$ due to the lower reactive sticking probability of $\rm Si\sb2H\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\sb{\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\sb{\rm s}$ and incident flux ratios $\rm J\sb{Ge2H6}/J\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\rm Si\sb2H\sb6$ with Si surface sites, $\rm Si\sb2H\sb6$ with Ge sites, $\rm Ge\sb2H\sb6$ with Si sites, and $\rm Ge\sb2H\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\rm S\sbsp{Ge2H6}{Si}$ and $\rm S\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\times10\sp{-3}$ respectively.
Download or read book Silicon 011 and Silicon Germanium 011 Gas Source Molecular Beam Epitaxy Surface Reconstructions Growth Kinetics and Germanium Segregation written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book B incorporation Kinetics and Charge Transport Property of Silicon Germanide 001 Layer Grown by GS MBE from Silicon Hydride Germanium Hydride and Boron Hydride written by Qing Lu and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036\ (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052).$ The growth rate of $\rm Si\sb{1-x}Ge\sb{x}$ alloys R$\sb{\rm SiGe}$ decreases somewhat with increasing $\rm G\sb2H\sb6$ in the flux-limited growth mode while dramatically increasing $\rm R\sb{SiGe}$ in the surface-reaction-limited regime.
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Morphological Evolution During Molecular Beam Epitaxy of Germanium germanium 001 and Silicon germanium 111 written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metallization and Solid Phase Epitaxy of Germanium silicon Alloys written by Qi-Zhong Hong and published by . This book was released on 1991 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas Source Molecular Beam Epitaxy of Si SiGe and Selective Area Epitaxy for Investigation of Facet Growth in Group IV Heterostructures written by Gregory David U'Ren and published by . This book was released on 1998 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films Gas surface Reactivity Germanium Surface Segregation and the Effect of Coincident Atomic Hydrogen written by Yongjun Zheng and published by . This book was released on 2000 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the kinetic studies presented in this thesis, a novel process was proposed to achieve selective epitaxial growth of Si and Si1-x Gex. Preliminary results show that up to 300 nm epitaxial silicon has been grown while with no sign of polycrystalline silicon growth.
Download or read book Selective Molecular Beam Epitaxy of Germanium on Oxide covered Silicon written by Qiming Li and published by . This book was released on 2005 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Fabrication of MOS gated Ge x Si 1 x Si High Hole Mobility Transistors written by Peter Michael Garone and published by . This book was released on 1992 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evolution of the Surface Morphology of Homoepitaxial Germanium 001 and Heteropitaxial Silicon 0 5 Germanium 0 5 germanium 001 Deposited by Molecular Beam Epitaxy at Reduced Temperatures written by Joseph Edward Van Nostrand and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $rm Esb{ES}approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by ${105}$ facets. Thin $rm Sisb{0.5}Gesb{0.5}/Ge(001)$ films deposited in the presence of tensile strain result in the formation of Shockley partial misfit dislocations and a subsequent stacking fault. The stacking faults extend to the film surface, where they impede step flow. This results in step bunching and the formation of rectangular mounds on the surface. Annealing these films results in an inversion of the mounds into pits.
Download or read book Growth of III nitride Thin Films and Heterostructures by Gas source Molecular Beam Epitaxy written by Li-Kang Li and published by . This book was released on 2000 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Megaelectron Volt Ion Beam Induced Epitaxy of Deposited Silicon and Germanium silicon Alloys on 100 Silicon Substrates written by Anthony J. Yu and published by . This book was released on 1989 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
