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Book Metalorganic Vapor Phase Epitaxy MOVPE

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer

Download or read book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer written by Martin Heilmann and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy

Download or read book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy written by Darren Brent Thomson and published by . This book was released on 2001 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy

Download or read book Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy written by Wui Hean Goh and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The motivation is to overcome the limit of the conventional growth method, which yield a high density of dislocation in the epitaxial layer. A low dislocation density in the epitaxial layer is crucial for high performance and high efficiency devices. This project focuses on growth and material characterization of GaN based nanostructures (nanodots and nanostripes) grown using the NSAG method that we developed. NSAG, with a precise control of diameter and position of nanostructures opens the door to new applications such as: 1) single photon source, 2) photonic crystal, 3) coalescence of high quality GaN template, and 4) novel nanodevices.

Book Growth Doping and Characterization of GaN and AlGaN Deposited on 6H SiC 0001 Substrates Via Metalorganic Vapor Phase Epitaxy for Microelectronic Applications

Download or read book Growth Doping and Characterization of GaN and AlGaN Deposited on 6H SiC 0001 Substrates Via Metalorganic Vapor Phase Epitaxy for Microelectronic Applications written by Michael D. Bremser and published by . This book was released on 1997 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III nitride Growth

Download or read book Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III nitride Growth written by Alaa Ahmad Kawagy and published by . This book was released on 2019 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been grown using hydride vapor phase epitaxy (HVPE). GaN substrates are the best choice for optoelectronic applications because of their physical and electrical properties. Even though HVPE GaN substrates are available at low-cost and create the opportunities for growth and production, these substrates suffer from large macro-scale defects on the surface of the substrate. In this research, four GaN on sapphire substrates were investigated in order to characterize the surface defects and, subsequently, understand their influence on homoepitaxial GaN growth. Two substrates were unintentionally doped (UID) GaN on sapphire, and the other two were semi-insulating (SI) GaN on sapphire which were doped with iron (Fe) in order to compensate the background doping inherent in GaN. Several characterization techniques were performed. Atomic force microscopy, scanning electron microscopy, and optical microscopy were performed to characterize the surface morphology. X-ray diffraction, cathodoluminescence, transmission measurements, and optical transmission electron microscopy were applied to study the bulk structural and optical properties. The investigation of the surface of GaN substrates exposed various defects that are associated with defects in the structure such as dislocations, as well as vacancies and point defects. The UID GaN substrates suffered from hexagonal V-shape pits with pits densities of approximately 107 and 108 cm-2, whereas, the SI GaN substrates exhibited much larger macro-scale pits with areal densities of about 102 cm-2. X-ray diffraction results were deconvoluted in order to characterize the screw and mixed (edge and screw) dislocation densities for the studied substrates. The UID substrates exhibited screw dislocation densities of 107 and 108 cm-2 and mixed dislocation densities of 109 and 1010 cm-2. The SI substrates, however, exhibit generally lower densities of dislocations of 109 and 108 cm-2 for screw and mixed, respectively. Cathodoluminescence measurements demonstrated interesting results for the UID and SI substrates with energies of 4 and 3.5 eV, respectively. The transmission measurements for the UID substrates showed that the bandgap energy was 3.39 eV.

Book Growth of Silicon doped Al0 6Ga0 4N with Low Carbon Concentration at High Growth Rate Using High flow rate Metal Organic Vapor Phase Epitaxy Reactor

Download or read book Growth of Silicon doped Al0 6Ga0 4N with Low Carbon Concentration at High Growth Rate Using High flow rate Metal Organic Vapor Phase Epitaxy Reactor written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metalorganic Vapor Phase Epitaxy of III V Heteroepitaxial Systems

Download or read book Metalorganic Vapor Phase Epitaxy of III V Heteroepitaxial Systems written by Anish Arun Khandekar and published by . This book was released on 2006 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Download or read book High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy written by Jana Hartmann and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-dimensional GaN micro- and nanorods with high aspect ratio have recently gained substantial interest in LED research, due to their reduced defect density, their non-polar sidewalls and their increased active area. Here, we present an alternative geometry for high aspect ratio 3D nanostructures: vertically standing GaN “walls”, so called GaN fins. With high aspect ratios, these GaN fins exhibit the same interesting characteristics as their rod counterparts mentioned above. Beyond that, due to their geometry, the respective material analysis and device processing can be expected to be less complex. We are able to demonstrate the highly reproducible selective area growth of these fins by continuous mode MOVPE. Fin heights of more than 50 μm (aspect ratios of nearly 14) could be achieved and growth rates are as high as 22.8 μm/h in the beginning of the growth. The sidewalls are smooth non-polar 11-20 a-planes, suitable for optoelectronic devices due to the missing quantum-confined Stark effect and less edge effects compared to rods. We investigate the influence of pattern orientation and geometry on the fin morphology. Moreover, the influence of silane flow, which is known to enhance the vertical growth rate, and other growth parameters are systematically explored.