Download or read book Mercury Cadmium Telluride written by Peter Capper and published by John Wiley & Sons. This book was released on 2011-06-20 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors

Download or read book Growth of Mercury Cadmium Telluride on Cadmium Telluride Substrates Using Organometallic Vapor Phase Expitaxy written by Ishwara B. Bhat and published by . This book was released on 1985 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mercury Cadmium Telluride written by Peter Capper and published by Wiley. This book was released on 2010-11-03 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors

Download or read book Isothermal Vapor Phase Epitaxy of Mercury Cadmium Telluride written by J. G. Fleming and published by . This book was released on 1986 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: A model is presented for the thermodynamic and kinetic basis of isothermal vapor phase epitaxy (ISOVPE) of mercury cadmium telluride. Growth is the result of a combination of transport of Te2 and Hg from the source to the substrate and interdiffusion between Hg and Cd in the growing layer. Using a Te-rich mercury cadmium telluride source, it is possible to fix the surface composition of the growing layer. The observed effects of time, source to substrate spacing, temperature, and mercury overpressure are explained using the model.

Download or read book The Effect of Substrate Misorientation on the Homoepitaxial Growth of Cadmium Telluride by Organometallic Vapor Phase Epitaxy written by Kijung Yong and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of Mercury Cadmium Telluride by Current Controlled Liquid Phase Epitaxy written by Fred H. Pollak and published by . This book was released on 1979 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have grown crystalline epitaxial layers of mercury cadmium telluride from a mercury-rich melt by the method of constant temperature current controlled liquid phase epitaxy (CCLPE). CCLPE is an attractive method of crystal growth for mercury cadmium telluride because it has the potential for achieving better uniformity than bulk crystal techniques. In addition it can be used for direct growth of p-n junctions by addition of suitable dopants. The lower growth temperature compared to bulk growth methods is expected to result in fewer vancancies. Growth was achieved under conditions where the substrate was hotter than the source as well as circumstances where the substrate was colder than the source. This indicated that the mass transport was driven by electromigration rather than the Peltier effect. Several layers were grown to a thickness of 30-100 microns. Best results were obtained on (111) oriented substrates. These layers were studied micrographically and with the use of X-ray diffraction methods. One 500 micron thick layer was also investigated by the electrolyte electroreflectance method in order to determine composition and homogeneity. This piece was found to have a mole fraction of cadmium telluride equal to 0.1. This represented a considerable mercury enrichment over the substrate and source. The variation in mole fraction of cadmium telluride over the surface of the sample (approx. 1 sq cm) was approximately 0.03.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Research on Mercury Cadmium Telluride written by Sorab K. Ghandhi and published by . This book was released on 1986 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accomplishment during this reporting period include the design of a new epitaxial reactor, the growth of high quality cadmium telluride and HgCdTe on both gallium arsenide and CdTe substrates, and the development of a comprehensive theory for the growth of CdTe in OMCVD systems. Keywords: Epitaxy; Vapor deposition; OMCVD(Organometallic Chemical Vapor Deposition).

Download or read book Growth and Characterization of Mercury Cadmium Telluride Investigated Using Isothermal and Temperature Graded Vapor Phase Epitaxial Techniques written by Seung Bae Lee and published by . This book was released on 1991 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Orientation on the Surface Morphology of Mercury Cadmium Telluride Grown by LPE Liquid Phase Epitaxy and VPE written by J. G. Fleming and published by . This book was released on 1986 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of substrate orientation on the morphology of liquid phase and vapor phase epitaxial films of mercury cadmium telluride was studied using spherically shaped (111) CdTe and CdZnTe substrates. A smooth terrace-free central region was observed, with terrace formation occurring for misorientations of greater than 0.2 + or - 0.1 from the (111) orientation. The interpretation of these results and the practical implications are discussed.

Download or read book Mercury Cadmium Telluride and Related Materials written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Vapor Phase Epitaxial Growth of 211 B Cadmium Telluride written by Sunil Rao and published by . This book was released on 2009 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Chemistry of Cadmium Telluride Organometallic Vapor phase Epitaxy written by Anthony Harrison McDaniel and published by . This book was released on 1995 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Isothermal Liquid Phase Epitaxial Growth of Mercury Cadmium Telluride written by J. G. Fleming and published by . This book was released on 1984 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: A method is presented for the isothermal growth of mercury cadmium telluride from a mercury or tellurium-rich melt. In accord with a proposed model, growth proceeds by HgTe deposition from the melt onto the substrate and interdiffusion between the Hg and Cd within the growing layer. Mercury-rich interdiffusion coefficients are determined from an analysis of experimental composition profiles.

Download or read book Growth and Characterization of Vapor phase Epitaxial Cadmium Telluride and Cadmium Sulpho telluride on Gallium Arsenide Substrates written by Peter D. Dreiske and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials written by David G. Seiler and published by American Institute of Physics. This book was released on 1991 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Vapor Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.