Download or read book Growth of In Al GaN Alloys by RF plasma Assisted Molecular Beam Epitaxy for Application in High Electron Mobility Transistor Structures written by Christiane Poblenz and published by . This book was released on 2005 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: An all-MBE growth process for AlGaN/GaN HEMTs on SiC was also developed utilizing an AlN nucleation layer and a two-step growth process for the GaN to reduce and control threading dislocation density. The GaN growth process was structurally and electrically optimized to achieve semi-insulating HEMT buffers. Two methods were developed to reduce buffer leakage. The first was through implementation of carbon doping via CBr4, and the second was by optimization of the AlN nucleation layer growth conditions in unintentionally doped (carbon-free) structures. Optimization of the direct-growth process and elimination of buffer leakage led to record output power densities in MBE-grown AlGaN/GaN HEMTs and device performance which is on par with state-of-the art HEMTs grown by metalorganic chemical vapor deposition (MOCVD).
Download or read book Epitaxial Growth of AlGaN GaN Heterostructure by Plasma assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications written by 黃延儀 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applied Physics Express written by and published by . This book was released on 2008 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Growth of GaN Thin Film and AlGaN based Quantum Well Structure by Plasma assisted Molecular Beam Epitaxy for Optoelectronics Application written by 碩廷·尤 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP Letters written by and published by . This book was released on 2004 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Download or read book GaN and Related Alloys 1999 Volume 595 written by Thomas H. Myers and published by . This book was released on 2000-05-05 with total page 1070 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Characterization of Epitaxial Semiconductor Layers written by Günther Bauer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Download or read book GaN Growth by RF plasma Assisted Molecular Beam Epitaxy written by Brenda VanMil and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Assisted Molecular Beam Epitaxy Growth and Cathodoluminescence Study of GaN AlN Distributed Bragg Reflector Nanorod Structure written by 何承穎 and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
