Download or read book Growth of GaN on Pre patterned Substrates by Vapor Phase Epitaxy for Optoelectronic Applications written by Kyung-Jun Nam and published by . This book was released on 1998 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Third Symposium on III V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III nitride Growth written by Alaa Ahmad Kawagy and published by . This book was released on 2019 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been grown using hydride vapor phase epitaxy (HVPE). GaN substrates are the best choice for optoelectronic applications because of their physical and electrical properties. Even though HVPE GaN substrates are available at low-cost and create the opportunities for growth and production, these substrates suffer from large macro-scale defects on the surface of the substrate. In this research, four GaN on sapphire substrates were investigated in order to characterize the surface defects and, subsequently, understand their influence on homoepitaxial GaN growth. Two substrates were unintentionally doped (UID) GaN on sapphire, and the other two were semi-insulating (SI) GaN on sapphire which were doped with iron (Fe) in order to compensate the background doping inherent in GaN. Several characterization techniques were performed. Atomic force microscopy, scanning electron microscopy, and optical microscopy were performed to characterize the surface morphology. X-ray diffraction, cathodoluminescence, transmission measurements, and optical transmission electron microscopy were applied to study the bulk structural and optical properties. The investigation of the surface of GaN substrates exposed various defects that are associated with defects in the structure such as dislocations, as well as vacancies and point defects. The UID GaN substrates suffered from hexagonal V-shape pits with pits densities of approximately 107 and 108 cm-2, whereas, the SI GaN substrates exhibited much larger macro-scale pits with areal densities of about 102 cm-2. X-ray diffraction results were deconvoluted in order to characterize the screw and mixed (edge and screw) dislocation densities for the studied substrates. The UID substrates exhibited screw dislocation densities of 107 and 108 cm-2 and mixed dislocation densities of 109 and 1010 cm-2. The SI substrates, however, exhibit generally lower densities of dislocations of 109 and 108 cm-2 for screw and mixed, respectively. Cathodoluminescence measurements demonstrated interesting results for the UID and SI substrates with energies of 4 and 3.5 eV, respectively. The transmission measurements for the UID substrates showed that the bandgap energy was 3.39 eV.
Download or read book Epitaxial Growth of GaN with Graded AlGaN on Patterned Silicon 111 Substrates by Metal organic Chemical Vapor Deposition written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Doping and Characterization of GaN and AlGaN Deposited on 6H SiC 0001 Substrates Via Metalorganic Vapor Phase Epitaxy for Microelectronic Applications written by Michael D. Bremser and published by . This book was released on 1997 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Morphology of Er Doped GaN on Sapphire and Hydride Vapor Phase Epitaxy Substrates written by and published by . This book was released on 1999 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. The emission spectrum of the GaN:Er films consists of two unique narrow green lines at 537 and 558 nm along with typical Er31 emission in the infrared at 1.5 micrometers. The narrow lines have been identified as Er31 transitions from the 2H(sub 11/2) and 4S(sub 3/2) levels to the 4I(sub 15/2) ground state. The morphology of the GaN:Er films showed that the growth resulted in either a columnar or more compact structure with no effect on green light emission intensity.
Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Download or read book Investigation of Nonpolar GaN based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique written by 徐曉秋 and published by . This book was released on 2011 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields
Download or read book Cracking in GaN Films Grown by Hydride Vapor Phase Epitaxy written by Edward V. Etzkorn and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride and its alloys have found increasingly widespread application in optical and electronic devices. Device performance can be substantially improved by homoepitaxial growth on GaN thick films or substrates produced by hydride vapor phase epitaxy (HVPE). To optimize these films, the extended defect and impurity densities must be minimized and the film cracking resulting from the intrinsic growth stress must be prevented. The implications of reactor design and procedure and of the mechanics of cracking for attaining these goals are elucidated in this work.
Download or read book Growth on Patterned Substrates for Optoelectronic Device Applications written by Vinod Kumar Guptah and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of GaN Vapor Phase Epitaxial Layers and Devices written by Sheau-ming Samuel Liu and published by . This book was released on 1976 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-01-30 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Download or read book Hydride Vapor Phase Epitaxy Growth of GaN InGaN ScN and ScAIN written by and published by . This book was released on 2010 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer written by Martin Heilmann and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
