Download or read book Growth of Gallium Nitride and Indium Gallium Nitride Nano Microstructures Via Metal Organic Chemical Vapor Deposition written by David Wood and published by . This book was released on 2014 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium gallium nitride nanostructures were grown at a temperature of 600oC and a total V/III ratio of 10,000. Below an indium fraction of 0.20 nanostructures were observed with diameters between 200 and 350 nanometers. The diameters were found to decrease with increasing indium fraction. Texturing in the (0001) c-plane direction was also enhanced as the indium fraction was increased. At indium fractions above 0.20 the formation of metal droplets within a porous indium gallium nitride film were observed. There are several untried deposition recipes that can yet be attempted to grow the nanostructures over the entire compositional range of the indium gallium nitride alloy.
Download or read book Metal organic Chemical Vapor Deposition Growth and Characterization of Gallium Nitride Nanostructures written by Jie Su and published by . This book was released on 2005 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Chemical Vapor Depositon sic of Indium Nitride and Indium Gallium Nitride Thin Films and Nanostructures for Electronic and Photovoltaic Applications written by Joshua L. Mangum and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A VLS growth mechanism is proposed, however, a VS growth mechanism can be achieved at high N/In ratios. SEM and TEM analysis revealed a core-shell nanowire structure with a single crystal InN core and a poly-crystalline In2O3 shell. Nanowire growth occurs along the [0002] direction with diameters and lengths ranging from 100 to 300 nm and 10 to 40 microns, respectively for a 1 hr growth. H-MOCVD growth of InN nano- and microrods occurred on different substrates and the nanorod structure was studied by TEM. The polarity of the substrate directly affected the nanorod tip shape and prismatic stacking faults are suggested as the cause for the flower-like growth habit. Variation of growth parameters, such as temperature, N/In ratio, and Cl/In ratio proved to be ineffective at changing the aspect ratio of the nanorods. Increased growth duration produces microrod size dimensions regardless of the chosen growth conditions.
Download or read book Growth of Gallium Nitride on Porous Templates by Metalorganic Chemical Vapor Deposition written by Yi Fu and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, GaN growth on porous templates by metalorganic chemical vapor deposition (MOCVD) was studied. The motivation of this research is pursuing an effective reduction of defects in GaN by its submicron-scale and nano-scale epitaxial lateral overgrowth (ELO) on these porous templates, which included porous TiN/GaN (P-TiN), imprint lithography patterned Ti/GaN (IL-Ti), carbon-face nano-porous SiC (C-PSC), and silicon-face nano-porous SiC (Si-PSC). The porous TiN/GaN was formed in situ in MOCVD reactor by annealing a Ti-covered GaN seed layer. This simplicity makes the GaN ELO on the P-TiN more cost-efficient than the conventional ELO which requires ex situ photolithography and/or etching. Both the GaN nano-ELO and the GaN micron-ELO could be realized on P-TiN by controlling the GaN nucleation scheme. The reduction efficacy of edge threading dislocation (TD) was ~15 times. The optical characterization indicated that the non-radiative point-defects in GaN grown were reduced significantly on the P-TiN. The imprint lithography patterned Ti/GaN had uniformly distributed submicron Ti pads on GaN seed layer. These Ti pads acted as GaN ELO masks. The TD reduction efficacy of the IL-Ti was only ~2 due to the low coverage of Ti (~25%) on the GaN seed layer and the low pressure (30 Torr) employed during GaN ELO. Even with a small reduction of TDs, the point-defects in GaN were effectively lowered by the IL-Ti. Hydrogen polishing, sacrificial oxidation, and chemical mechanical polishing were employed to remove surface damage on the PSC substrates. Nitrogen-polarity GaN grown on the C-PSC was highly dislocated because the rough surface of C-PSC induced strong misorientation between GaN nucleation islands. The efficacy of Si-PSC on defect reduction primarily depended on the GaN nucleation schemes. A high density of GaN nano-nucleation-islands was required to realize the GaN nano-ELO extensively. With such a nucleation scheme, the GaN grown on Si-PSC had a ~20 times reduction on the density of the mixed and screw TDs compared with control sample. This growth method is promising for effective defect reduction within a small GaN thickness. Reducing the GaN nucleation density further lowered the TD density but also diminished the efficacy of Si-PSC. These results were explained by a growth model based on the mosaic structure of GaN.
Download or read book Growth of InGaN Nanorings Via Metal Organic Chemical Vapor Deposition written by Zohair Zaidi and published by . This book was released on 2012 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride nanostructures have been an active area of research.
Download or read book Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy written by Vaibhav Uday Chaudhari and published by . This book was released on 2012 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was also found that the polycrystalline nature is as a result of polycrystalline nature of LT-GaN grown on the InN template. It was also shown that formation of completely enclosed uniformly distributed nanovoids were very essential to grow crack free thick GaN which is highly textured in 0002 orientation. It was also shown that GaN grown was very high quality crystal free of Indium. GaN growth on Indium metal deposited on Silicon was also studied. Depending on growth mode and conditions GaN 40 micron thick film and 100nm x 5000nm GaN wafers were successfully grown in same reactor.
Download or read book Growth of Gallium Nitride and Indium Nitride Films and Nanostructured Materials by Hydride metalorganic Vapor Phase Epitaxy written by Hyun Jong Park and published by . This book was released on 2006 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crack-free, 3 mum GaN films were grown on GaN/AlGaN/Si template at 850°C although cracks developed when the thickness exceeded 7 mum. It was possible, however, to grow crack-free polycrystalline 40 mum thick GaN on Si using InN NRs as a buffer material.
Download or read book Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition written by Chih-Hsun Wei and published by . This book was released on 1999 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Critical Layer Thickness Determination of Indium Gallium Nitride Films Grown on Gallium Nitride written by Christopher Arlen Parker and published by . This book was released on 2001 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: netal organic chemical vapor deposition, gallium phosphide, photodetectors, bowing parameter, band gap dependence on composition, indium gallium nitride, critical layer thickness.
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Download or read book Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-08-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.
Download or read book Laser assisted Metal Organic Chemical Vapor Deposition of Gallium Nitride written by Hossein Rabiee Golgir and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The m-plane-oriented gallium nitride nanoplates were successfully grown on silicon substrates at 450 °C, using CO2 laser-assisted metal organic chemical vapor deposition with perpendicular geometries.
Download or read book Gallium Nitride Indium Nitride and Heterostructure Development Using the MEAglow Growth System written by Peter William Binsted and published by . This book was released on 2014 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research Lab. Thin films of gallium nitride and indium nitride are produced as well as heterostructures comprised of these two films and their ternary alloy InGaN. MEAglow is a form of plasma enhanced chemical vapour deposition (PECVD) employing migration enhanced epitaxy (MEE). The heterostructure is being developed for a novel field effect transistor (FET) based on the tunnelling of charge carriers which alter the channel conductivity. The configuration of this unique III-Nitride device should allow the FET to function as normally off in either n-type or p-type operation. Due to the difficulties in growing low temperature GaN, test devices of this abstract design were not previously possible. Further details on the device operation and growth parameters are included. Samples produced by the research reactor were characterised through x-ray diffraction (XRD), ultraviolet-near infrared-visible spectroscopy (UV-Vis-NIR), Auger spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Film growth is accomplished by an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD). The reactor features a scalable hollow cathode type plasma source. Data obtained through characterisation is subjected to theoretical treatment which explains much not previously understood behaviour of the GaN films. Many challenges in III-Nitride film growth have been overcome during this research project. A method of developing structures consisting of InN and GaN within the same system has been proven."-- from abstract.
Download or read book Growth and Characterization of Gallium Nitride on 0001 Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition written by Chiao-Yi Hwang and published by . This book was released on 1996 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Chemical Vapor Deposition of Gallium Nitride Using Ammonia and Dimethylhydrazine written by Sten J. Heikman and published by . This book was released on 1998 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Homo and Hetero epitaxial Growth of Gallium Nitride by Metalorganic Chemical Vapour Deposition written by Andreas Rudolf Antonius Zauner and published by . This book was released on 2001 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Chemical Vapor Deposition of Gallium Nitride on Sacrificial Substrates written by William Edward Fenwick and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO, because of its similar lattice constant and thermal expansion coefficient, is a promising substrate for growth of low defect-density GaN. The major hurdles for GaN growth on ZnO are the instability of ZnO in a hydrogen atmosphere and out-diffusion of zinc and oxygen from the substrate. A process was developed for the MOCVD growth of wurtzite GaN and InxGa1-xN on ZnO, and the structural and optical properties of these films were studied. High zinc and oxygen concentrations remained an issue, however, and the diffusion of zinc and oxygen into the subsequent GaN layer was studied more closely.
