Download or read book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process written by James E. Stangel (CAPT, USAF.) and published by . This book was released on 1972 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process written by James E. Stangel and published by . This book was released on 1972 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt: The vapor phase process was used to grow n-type epitaxial gallium arsenide. The system was an open flow type, using the reagents gallium, arsenic trichloride, and hydrogen. The importance of initiating growth after saturating the gallium source with arsenic was demonstrated. The growth rate was shown to be highly dependent on both substrate temperature and total flow rate. It was shown that a higher arsenic trichloride concentration resulted in a lower net donor concentration within the epitaxial layer. (Author).

Download or read book Vapor Phase Epitaxy of Gallium Arsenide written by Arrigo Addamiano and published by . This book was released on 1973 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs epitaxial layers of good semiconductor quality (comparable to bulk GaAs) have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. (Author).

Download or read book The Growth of Gallium Arsenide by Organometallic Vapor Phase Epitaxy Using Diethylgallium Chloride and Arsine written by Thomas W. Krygowski and published by . This book was released on 1993 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vapor Phase Epitaxial Growth of Gallium Arsenide Indium Phosphide and Indium Gallium Arsenide by the Hydride Technique written by Lawrence Martin Zinkiewicz and published by . This book was released on 1981 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Growth Processes on Different Gallium Arsenide Surfaces in Metal Organic Vapor Phase Epitaxy written by Markus Pristovsek and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Studies of the Organometallic Vapour Phase Epitaxial Growth of Gallium Arsenide written by R. D. Hoare and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Recent Advances in the Growth of Epitaxial Gallium Arsenide written by Kenneth L. Klohn and published by . This book was released on 1971 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).

Download or read book Feedback Control of Organometallic Vapor phase Epitaxial Growth of Aluminum Gallium Arsenide Devices written by Sean Charles Warnick and published by . This book was released on 1995 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Materials Growth and Processing written by D. W. Shaw and published by . This book was released on 1978 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous, in situ rate measurements were employed to evaluate the influence of gas phase supersaturation on the gallium arsenide epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. The resulting kinetic data permit establishment of the optimum conditions for selective epitaxial growth of gallium arsenide at subnormal temperatures using the classic gallium/arsenic trichloride/hydrogen chemical vapor deposition process. Specifically, the extent of extraneous deposition is minimized through the use of low arsenic partial pressures entering the source region or through the use of small source surface areas.

Download or read book The Organometallic Vapor Phase Epitaxial Growth of III V Metastable Alloys written by Meng-Jaw Cherng and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vapor Phase Epitaxial Growth of GaAs written by William Marlin Evey and published by . This book was released on 1978 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Organic Vapor Phase Epitaxy Growth Mechanisms of Gallium Antimonide and Compositional Grading in Pseudomorphic Gallium Arsenide Antimonide Films written by Brian Edmund Hawkins and published by . This book was released on 2004 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vapor Phase Epitaxial Growth and Etching of GaAs written by Hong Gyu Han and published by . This book was released on 1988 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: