Download or read book Growth Kinetics of Gan During Molecular Beam Epitaxy written by 鄭聯喜 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growth Kinetics of GaN During Molecular Beam Epitaxy" by 鄭聯喜, Lianxi, Zheng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124274 Subjects: Surfaces (Physics) Gallium nitride Molecular beam epitaxy Scanning tunneling microscopy

Download or read book Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg Doped GaN Films Grown by PAMABE written by Jae-Min Myoung and published by . This book was released on 1998 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Growth Kinetics and Thermodynamics on the Properties of GaN Grown by Molecular Beam Epitaxy written by Devin Earl Crawford and published by . This book was released on 1996 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth Kinetics of GaN Grown by Molecular Beam Epitaxy Using Ga and Ammonia written by Ruediger Held and published by . This book was released on 1999 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Impact of the Growth Kinetics on Deep Level Defect Production in GaN Films Grown by Molecular Beam Epitaxy written by Hsing-Long Liu and published by . This book was released on 1996 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transport Growth Mechanisms and Material Quality in GaN Epitaxial Lateral Overgrowth written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1[micro]m nucleation zones. Although emission is comprised of both UV ([approximately]365nm) and yellow ([approximately]550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

Download or read book MBE Growth and Initial Nucleation Kinetics of GaN on GaAs 100 Substrates written by Mark Lee O'Steen and published by . This book was released on 1995 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Controlled Growth of GaN Columns and 3D Core Shell LEDs by MOVPE written by Xue Wang and published by Cuvillier Verlag. This book was released on 2015-06-11 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantages. For instance, in a columnar GaN coreshell LED structure the InGaN/GaN MQW wraps around the column, therefore the light emitting area can be enormously increased. This is the main driving force behind the intense investigation of nanowire and micro-columnar LEDs. In addition, because of the increased area of the MQW, the internal quantum efficiency may be improved by a reduction of the local carrier density, mitigating the efficiency droop. Besides, due to the reduced influence of thermal and lattice mismatch between the substrate and columns, dislocation-free GaN column arrays can be achieved on large area substrates. The main contribution of the present work is the controlled growth of GaN columns and core-shell LEDs by metal-organic vapor-phase expitaxy. The growth conditions which lead to vertical growth of N-polar and Ga-polar GaN columns are systematically investigated. The causes of the vertical growth are explained by surface processes under appropriate conditions for both polarities. Quantitative discussions of growth kinetics of GaN columns are an important feature in this work. The difficulties and the strategies of the MQW and p-GaN shell growth on high aspect ratio GaN columns are presented in detail.

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Download or read book Growth and Characterization of GaN Bulk Crystals Via Vapor Phase Transport written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Free-standing single crystals of bulk GaN were grown via unseeded vapor phase transport at 1130C on hexagonal BN surfaces via direct reaction of Ga with ammonia. The temperature and stability of the Ga source were critical in terms of uniform nucleation and growth. The source temperature was maintained at 1260C to minimize a rapid reaction leading to the formation of GaN and the subsequent decomposition beneath the surface and consequent spattering of Ga. A maximum crystal growth temperature of 1130C was determined in which the GaN growth kinetics were much greater than decomposition. The number of nucleation events was reduced and the crystal size increased by a novel nucleation technique wherein ammonia was introduced at high temperatures. The resulting crystals were either needles or platelets depending on the process variables employed. Low V/III ratios achieved via ammonia flow rates 75sccm and/or ammonia total pressures 430Torr favored lateral growth. The average lateral growth rate for the platelets was ~50micron/hr; the average vertical growth rate for the needles was ~500micron/hr. Growth rates in all other directions for each of these two morphologies were very low. Seeded growth of both needle and platelet crystals was also achieved; however, the growth rate decreased at longer times and higher pressures due to reaction with hydrogen from the increased decomposition of ammonia. Nitrogen dilution of ammonia reduced the amount of hydrogen generated as a result of ammonia decomposition and increased the kinetic barrier to desorption of reactants from the GaN surface and then alleviated the enhanced decomposition of GaN crystals. A 2mm x 1.5mm needle and a 2.3mm x 1.8mm x 0.3mm platelet of GaN were grown with minimal decomposition in a 66.7% ammonia + 33.3% nitrogen gas mixture. Excellent crystalline quality was confirmed by Raman spectroscopy and Photoluminescence. Crystal growth using a Ga- 5at%Al source was conducted in an attempt to increase growth rate an.

Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in Crystal Growth Research written by Y. Furukawa and published by Elsevier. This book was released on 2001-07-12 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is to provide a timely collection that highlights advances in current research of crystal growth ranging from fundamental aspects to current applications involving a wide range of materials. This book is published on the basis of lecture texts of the 11th International Summer School on Crystal Growth (ISSCG-11) to be held at Doshisha Retreat Center in Shiga Prefecture Japan, on July 24-29, 2001. This school is always associated with the International Conference of Crystal Growth (ICCG) series that have been held every three years since 1973; thus this school continues the tradition of the past 10 schools of crystal growth.

Download or read book Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states which have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in areas important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students. Finally, a nationally competitive program was established as evidenced by the award of a regular ONR grant, "An Investigation of the Effects of Hydrogen on Growth Kinetics and Defect Formation in Group III-Nitride Semiconductors", (ONR-N00014-96-1-1008) as a direct offshoot of research performed on this grant.

Download or read book Gallium Nitride GaN II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Download or read book Handbook of Nitride Semiconductors and Devices Materials Properties Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.