Download or read book Growth and Structural Characterization of Novel Semiconductor Heterostructures written by Jane Guizhen Zhu and published by . This book was released on 1991 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Download or read book Growth and Characterization of Novel III V Semiconductor Heterostructures written by Douglas Collins and published by . This book was released on 1994 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural Characterization of II VI and III V Compound Semiconductor Heterostructures and Superlattices written by Lu Ouyang and published by . This book was released on 2012 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research described in this dissertation has involved the use of transmission electron microcopy (TEM) to characterize the structural properties of II-VI and III-V compound semiconductor heterostructures and superlattices. The microstructure of thick ZnTe epilayers (~2.4 m) grown by molecular beam epitaxy (MBE) under virtually identical conditions on GaSb, InAs, InP and GaAs (100) substrates were compared using TEM. High-resolution electron micrographs revealed a highly coherent interface for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations and 60o dislocations were commonly observed at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. The amount of residual strain at the interfaces was estimated to be 0.01% for the ZnTe/InP sample and -0.09% for the ZnTe/GaAs sample. Strong PL spectra for all ZnTe samples were observed from 80 to 300 K. High quality GaSb grown by MBE on ZnTe/GaSb (001) virtual substrates with a temperature ramp at the beginning of the GaSb growth has been demonstrated. High-resolution X-ray diffraction (XRD) showed clear Pendellösung thickness fringes from both GaSb and ZnTe epilayers. Cross-section TEM images showed excellent crystallinity and smooth morphology for both ZnTe/GaSb and GaSb/ZnTe interfaces. Plan-view TEM image revealed the presence of Lomer dislocations at the interfaces and threading dislocations in the top GaSb layer. The defect density was estimated to be ~1 x107/cm2. The PL spectra showed improved optical properties when using the GaSb transition layer grown on ZnTe with a temperature ramp. The structural properties of strain-balanced InAs/InAs1-xSbx SLs grown on GaSb (001) substrates by metalorganic chemical vapor deposition (MOCVD) and MBE, have been studied using XRD and TEM. Excellent structural quality of the InAs/InAs1-xSbx SLs grown by MOCVD has been demonstrated. Well-defined ordered-alloy structures within individual InAs1-xSbx layers were observed for samples grown by modulated MBE. However, the ordering disappeared when defects propagating through the SL layers appeared during growth. For samples grown by conventional MBE, high-resolution images revealed that interfaces for InAs1-xSbx grown on InAs layers were sharper than for InAs grown on InAs1-xSbx layers, most likely due to a Sb surfactant segregation effect.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by S. Sanguinetti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular beam Epitaxy Growth and Structural Characterization of Semiconductor ferromagnet Heterostructures by Grazing Incidence X ray Diffraction written by Dillip Kumar Satapathy and published by . This book was released on 2005 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by H. Renevier and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by F. Boscherini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Download or read book Growth and Characterization of Novel Vertical Emitting Semiconductor Structures written by Ursula Oesterle and published by . This book was released on 1994 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2007-01-31 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Emil S. Božin and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Characterization and Simulation of Novel Semiconductor Tunnel Structures written by David H. Chow and published by . This book was released on 1989 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of IV VI Semiconductor Heterostructures on 100 BaF2 written by I-Na Chao and published by . This book was released on 1996 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscale Structural Characterization of Oxide and Semiconductor Heterostructures written by Joonkyu Park and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to a recent report from International Technology Roadmap for Semiconductors (ITRS), semiconductor industry based on silicon Complementary metal-oxide-semiconductor (CMOS) technology is facing challenges in terms of making the device faster with higher density and lower power consumption. To overcome the challenges, various methodologies are attempted using different state variables instead of electric charges, for example, polarization, phase states, and electron spin information. Different materials can also be chosen instead of silicon, for example, carbon, complex metal oxides in 1D or 2D nanostructure formations. A different concept of operating devices is also another option, for example, single electron transistors, spintronics, and quantum electronics. A tremendous number of stages during microfabrication manufacturing for integrated circuits consist of a series of deposition and etching processes. During these processes, unknown problems can arise from the design of their structural geometry. For example, unwanted strain distribution from the electrode patterns can change the electric properties of underlying materials regarding the decrease in charge carrier mobility or increase in leakage current in dielectrics, which all occur in nanoscale. So, it is important to understand the effects of structural phenomena on the electronic properties of materials using nanoscale characterization. The first work shows the changes in electronic property in Si quantum dot devices fabricated on Si/SiGe heterostructure is discussed. The electrode deposition process on the heterostructure surface is necessary for the device operation, but the electrodes also induce external nanoscale strain fields. These strain fields are transferred to the substrate materials via electrode edges and change electronic band structure. The magnitudes of the strain and their impact on changing the band structure are studied. In the second project, the alignment of ferroelectric polarization nanodomains in PbTiO3/SrTiO3 (PTO/STO) superlattice heterostructures is discussed. The PTO/STO nanostructure was created using a focused-ion beam technique. The domain alignment was observed using the x-ray nanodiffraction. A thermodynamic theoretical approach calculates the free energy density of the system to understand the origin of domain alignment. In the final project, the origin of photoinduced domain transformation in PTO/STO superlattices is discussed. Charged carriers are excited by the above-bandgap optical illumination, and transported by the internal electric fields arising from depolarization fields. These photoexcited charge carriers eventually screen the depolarization fields, and the initial striped nanodomain patterns transform to a uniform polarization state. After the end of illumination, the striped nanodomains patterns recover for a period of seconds at room temperature. The transformation time depends on the optical intensity, and the recovery time depends on the temperature. A charge trapping model with a theoretical calculation reveals that the charge trapping is a dominant process for the domain transformation, and the de-trapping process is for the recovery. Simulated domain intensity changes are in good agreements with the X-ray diffraction data.
Download or read book Growth Processing and Characterization of Semiconductor Heterostructures Volume 326 written by Materials Research Society. Meeting Symposium M. and published by . This book was released on 1994-03-23 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
