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Book Growth and Characterization of Epitaxially Aligned Titanium Nitride Thin Films on Silicon by Orthogonally Crossed beam Pulsed Laser Deposition

Download or read book Growth and Characterization of Epitaxially Aligned Titanium Nitride Thin Films on Silicon by Orthogonally Crossed beam Pulsed Laser Deposition written by Sukill Kang and published by . This book was released on 2001 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Pulsed Laser Deposition and Characterization of Gallium Nitride Thin Films

Download or read book Pulsed Laser Deposition and Characterization of Gallium Nitride Thin Films written by Massimo Cazzanelli and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films

Download or read book Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films written by Jermaine Maurice Bradley and published by . This book was released on 2005 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigates the structural and mechanical properties of pulsed laser deposited (PLD) titania (TiO2) thin films. Uses nano-indentation to determine the mechanical properties of the films as a function of the growth parameters.

Book Plasma Assisted Atomic Layer Deposition of III Nitride Thin Films

Download or read book Plasma Assisted Atomic Layer Deposition of III Nitride Thin Films written by Çağla Özgit-Akgün and published by LAP Lambert Academic Publishing. This book was released on 2014-03 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."

Book Characterization of the Growth of Aluminum Nitride and Gallium Nitride Thin Films on Hydrogen Etched And or Cleaned 6H SiC 0001  Surfaces

Download or read book Characterization of the Growth of Aluminum Nitride and Gallium Nitride Thin Films on Hydrogen Etched And or Cleaned 6H SiC 0001 Surfaces written by Jeffrey David Hartman and published by . This book was released on 2000 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: 6H-SiC, Hydrogen etching, Aluminum nitride, Gallium nitride, Photo-electron emission microscopy, Chemical vapor deposition, Molecular beam epitaxy.

Book Growth and Characterization of Barium Strontium Titanate Thin Films with Enhanced Electrical Properties Using Pulsed Laser Deposition

Download or read book Growth and Characterization of Barium Strontium Titanate Thin Films with Enhanced Electrical Properties Using Pulsed Laser Deposition written by Anuranjan Srivastava and published by . This book was released on 1999 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Pulsed Laser Deposition of Thin Films

Download or read book Pulsed Laser Deposition of Thin Films written by Robert Eason and published by John Wiley & Sons. This book was released on 2007-12-14 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.

Book Epitaxial Growth and Characterization of Gallium Nitride Films on SI 111

Download or read book Epitaxial Growth and Characterization of Gallium Nitride Films on SI 111 written by Biemann Alexander Martin and published by . This book was released on 2005 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-nitrides, and in particular, aluminum nitride (AIN), gallium nitride (GaN), and indium nitride (InN) make up a class of compound semiconductors with direct bandgaps ranging from 1.2 electron volts to 6.2 electron volts (eV). They afford a broad range of applications including light emitting diodes (LED's) and laser diodes (LD's) emitting from the visible to the ultraviolet (UV) portions of the electromagnetic spectrum, radiation detectors, and high power, high frequency electronic devices capable of operating at high temperatures, and in hostile chemical environments. Materials studied in this work were grown on silicon substrates, Si(111) by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters and characterized using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), Photoluminescence (PL), and four-point probe resistivity measurements. Growth began with deposition of 0.3 monolayer (ML) of Al on the Si(111)7x7 surface leading to fully passivated Si(111) [root of]3x[root of]3-Al surface. Next, an AIN buffer layer and then the GaN layers were deposited. X-ray measurements indicated growth of single-crystalline hexagonal GaN(001) while PL measurement demonstrated a peak position corresponding to bulk hexagonal-GaN. Sample morphology and resistivity showed a strong dependence on growth conditions. The layer RMS roughness increased with increasing thickness for samples grown with low atomic-nitrogen (N) to molecular N ratio while smoother layers were obtained at the highest atomic N concentrations. Un-intentionally doped layers were n-type. P-type doping was achieved by doping with Mg.

Book Growth and Characterization of Gallium Nitride on  0001  Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition

Download or read book Growth and Characterization of Gallium Nitride on 0001 Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition written by Chiao-Yi Hwang and published by . This book was released on 1996 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition

Download or read book Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition written by Chih-Hsun Wei and published by . This book was released on 1999 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth and Characterization of III V Nitride Thin Films

Download or read book Growth and Characterization of III V Nitride Thin Films written by Zlatko Sitar and published by . This book was released on 1990 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth and Characterization of Thin and Thick Gallium Nitride

Download or read book Growth and Characterization of Thin and Thick Gallium Nitride written by Michael A. Mastro and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: