Download or read book Growth and Characterization of Ru Films Deposited by Chemical Vapor Deposition written by Kelly Marriott Thom and published by . This book was released on 2009 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions in integrated circuits scale down, there is an increasing need to deposit ultra-thin, smooth, continuous films for use in applications such as the liner in back end processing. The liner must have good adhesion to both Cu and the dielectric, act as a Cu diffusion barrier, and be conductive enough to allow the electroplating of Cu. Ruthenium (Ru) has been considered as a possible material to be implemented into the liner due to its low electrical resistivity, high thermal and chemical stability, and negligible solubility with copper. Chemical vapor deposition (CVD) is an attractive growth technique for Ru films because it allows conformal deposition in high-aspect ratio features. However, there are some limitations that must be overcome in the deposition of Ru films. CVD Ru films suffer from poor nucleation on oxide and nitride substrates. Poor nucleation leads to rough, large-grained polycrystalline columnar films, which may not coalesce into a continuous film until the thickness greatly exceeds the requirements for the liner. This dissertation presents surface chemistry and film growth studies involving Ru CVD and focuses on improving the nucleation and properties of Ru films. In situ surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD) were used to study the fundamental adsorption behavior of the Ru precursor, (2,4- dimethylpentadienyl)(ethylcyclopentadienyl)Ru or DER, on polycrystalline Ta, both with and without iodine adsorbed on the Ta. Based upon these results, CVD films were grown using DER/O2, and it was shown that nucleation and film properties can be improved by the addition of methyl iodide. Ru films grown using DER/O2 show sparse nucleation, which leads to very rough surface topography and large polycrystalline columnar grains. The addition of methyl iodide during growth significantly improves nucleation and results in smoother, smaller-grained films. Iodine adsorbs on the initially-formed Ru islands and continuously segregates through the film to the surface during the entire deposition. In addition, CVD films grown with Ru3(CO)12 were studied. Use of the Ru3(CO)12 precursor results in thin, ultra-smooth films that show little to no columnar grain structure.
Download or read book Growth and Characterization of Diamond and Diamond like Films by Filament assisted Chemical Vapor Deposition written by Yijian Jin and published by . This book was released on 1993 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Amorphous Ultrathin Ruthenium Metal Films written by Daniel Edgar Bost and published by . This book was released on 2017 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper interconnect systems in modern microelectronics require the use of one or more liner layers and a capping layer in order to prevent copper diffusion into the other materials of the device. Ruthenium has been suggested as a replacement for the currently-standard Ta/TaN stack used for this purpose due to its low bulk diffusivity of copper and its good adhesion to both substrate materials and copper, but at very low thicknesses the polycrystalline nature of pure Ru allows for diffusion of copper along grain boundaries, resulting in the failure of the barrier. Because amorphous metal alloys do not form grains, amorphous Ru alloys have been examined as a way to eliminate the grain boundary diffusion of copper across the film. Early attempts to produce such films with phosphorus as an alloying element by chemical vapor deposition (CVD) using Ru3(CO)12 and organic phosphorus precursors such as trimethylphosphine have performed well relative to Ta/TaN as a barrier layer at 5 nm thickness. However, high concentrations of carbon were incorporated into the films during CVD by the P precursors. Carbon increases the resistivity of Ru(P) and adds an unnecessary element to the calculated structure of the amorphous alloy. To reduce resistivity, lower-carbon Ru(P) alloy films are grown at 250 °C using Ru3(CO)12 and a hydride gas (PH3) as the P precursor. Diborane (B2H6) is used to grow an alternate alloy, Ru(B). Ru(P) and Ru(B) alloys are predicted by first-principles calculations to be amorphous above 20 at.% P for Ru(P) and 10 at.% B for Ru(B). Growth studies revealed amorphous Ru(P) above 17 at.% P and amorphous Ru(B) above 10 at.% B, with polycrystalline films formed at lower concentrations. Both Ru(P) and Ru(B) are found to deposit as smooth, continuous films at the 3 nm thickness. Metal-insulator-semiconductor (MIS) capacitor structures consisting of copper / amorphous alloy / SiO2 / Si / Al stacks were used to test barrier performance under electrical stress. This testing confirms that the amorphous Ru films perform adequately as Cu diffusion barriers.
Download or read book Growth and Characterization of CVD Ru and Amorphous Ru P Alloy Films for Liner Application in Cu Interconnect written by Jinhong Shin and published by . This book was released on 2007 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper interconnect requires liner materials that function as a diffusion barrier, a seed layer for electroplating, and an adhesion promoting layer. Ruthenium has been considered as a promising liner material, however it has been reported that Ru itself is not an effective Cu diffusion barrier due to its microstructure, which is polycrystalline with columnar grains. The screening study of Ru precursors revealed that all Ru films were polycrystalline with columnar structure, and, due to its strong 3D growth mode, a conformal and ultrathin Ru film was difficult to form, especially on high aspect ratio features. The microstructure of Ru films can be modified by incorporating P. Amorphous Ru(P) films are formed by chemical vapor deposition at 575 K using a single source precursor, cis-RuH2(P(CH3)3)4, or dual sources, Ru3(CO)12 and P(CH3)3 or P(C6H5)3 The films contain Ru and P, which are in zero-valent states, and C as an impurity. Phosphorus dominantly affects the film microstructure, and incorporating> 13% P resulted in amorphous Ru(P) films. Metastable Ru(P) remains amorphous after annealing at 675 K for 3 hr, and starts recrystallization at ~775 K. The density of states analysis of the amorphous Ru(P) alloy illustrates metallic character of the films, and hybridization between Ru 4d and P 3p orbitals, which contributes to stabilizing the amorphous structure. Co-dosing P(CH)3 with Ru3(CO)12 improves film step coverage, and the most conformal Ru(P) film is obtained with cis-RuH2(P(CH3)3)4; a fully continuous 5 nm Ru(P) film is formed within 1 æm deep, 8:1 aspect ratio trenches. First principles density functional theory calculations illustrate degraded Cu/Ru adhesion by the presence of P at the interface, however, due to the strong Ru-Cu bonds, amorphous Ru(P) forms a stronger interface with Cu than Ta and TaN do. Cu diffusion studies at 575 K suggests improved barrier property of amorphous Ru(P) films over polycrystalline PVD Ru.
Download or read book Nucleation Epitaxial Growth and Characterization of beta SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Novel Route to the Growth of Porous Thin Films by Chemical Vapor Deposition and Their Characterization written by Prahalad Madhavan Parthangal and published by . This book was released on 2004 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition for Nanotechnology written by Pietro Mandracci and published by BoD – Books on Demand. This book was released on 2019-01-10 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposition (CVD) techniques have played a major role in the development of modern technology, and the rise of nanotechnology has further increased their importance, thanks to techniques such as atomic layer deposition (ALD) and vapor liquid solid growth, which are able to control the growth process at the nanoscale. This book aims to contribute to the knowledge of recent developments in CVD technology and its applications. To this aim, important process innovations, such as spatial ALD, direct liquid injection CVD, and electron cyclotron resonance CVD, are presented. Moreover, some of the most recent applications of CVD techniques for the growth of nanomaterials, including graphene, nanofibers, and diamond-like carbon, are described in the book.
Download or read book Deposition and Properties of Co and Ru based Ultra thin Films written by Lucas Benjamin Henderson and published by . This book was released on 2009 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the times-to-failure at accelerated temperature and field conditions implies that ruthenium-phosphorus performs acceptably as a diffusion barrier for temperatures above 165 °C. The future problems associated with the copper capping layer are primarily due to the poor adhesion between copper and the current Si-based capping layers. Cobalt, which adheres well to copper, has been widely proposed to replace the Si-based materials, but its ability to prevent copper diffusion must be improved if it is to be successfully implemented in the interconnect. Using a dual-source chemistry of dicobaltoctacarbonyl and trimethylphosphine at temperatures from 250-350 °C, amorphous cobalt-phosphorus can be deposited by chemical vapor deposition. The films contain elemental cobalt and phosphorus, plus some carbon impurity, which is incorporated in the film as both graphitic and carbidic (bonded to cobalt) carbon. When deposited on copper, the adhesion between the two materials remains strong despite the presence of phosphorus and carbon at the interface, but the selectivity for growth on copper compared to silicon dioxide is poor and must be improved prior to consideration for application in interconnect systems. A single molecule precursor containing both cobalt and phosphorus atoms, tetrakis(trimethylphosphine)cobalt(0), yields cobalt-phosphorus films without any co-reactant. However, the molecule does not contain sufficient amounts of amorphizing agents to fully eliminate grain boundaries, and the resulting film is nanocrystalline.
Download or read book Characterization of Growth and Thermal Behaviors of Thin Films for the Advanced Gate Stack Grown by Chemical Vapor Deposition written by Taek Soo Jeon and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Ru based Thin Films Grown by Chemical Vapor Deposition CVD and Atomic Layer Deposition ALD Methods for Future Complementary Metal Oxide Semiconductor CMOS Gate Electrode Applications written by Filippos Papadatos and published by . This book was released on 2006 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Controlling Nucleation and Growth of Ultra thin Ruthenium Films in Chemical Vapor Deposition written by Wen Liao (Ph. D.) and published by . This book was released on 2016 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature sizes in microelectronic devices decrease, ultra-thin (
Download or read book Growth and Optoelectronic Properties of Diamond Films Prepared by Chemical Vapor Deposition written by Shu Jin and published by . This book was released on 1994 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Download or read book TMS 2021 150th Annual Meeting Exhibition Supplemental Proceedings written by The Minerals, Metals & Materials Society and published by Springer Nature. This book was released on 2021-02-23 with total page 1062 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection presents papers from the 150th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society.
Download or read book Growth and Characterization of Diamond Films Fabricated Using Hot Filament Chemical Vapor Desposition written by Ramakrishnan Bashyam and published by . This book was released on 1996 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP written by and published by . This book was released on 2002 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
