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Book Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Antimonide Gallium Arsenide Superlattices

Download or read book Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Antimonide Gallium Arsenide Superlattices written by John Frederick Klem and published by . This book was released on 1987 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Arsenide Antimonide gallium Arsenide Superlattices

Download or read book Growth and Characterization of Molecular Beam Epitaxial Gallium Arsenide Antimonide and Gallium Arsenide Antimonide gallium Arsenide Superlattices written by and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Molecular Beam Epitaxial Growth and Characterization of Indium Antimonide on Gallium Arsenide

Download or read book Molecular Beam Epitaxial Growth and Characterization of Indium Antimonide on Gallium Arsenide written by Jen-Inn Chyi and published by . This book was released on 1990 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$spcirc$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers. Indium antimonide p$sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.

Book Molecular Beam Epitaxial Growth and Characterization of Gallium Antimonide  and Its Use in GaSb AlSb Heterostructures

Download or read book Molecular Beam Epitaxial Growth and Characterization of Gallium Antimonide and Its Use in GaSb AlSb Heterostructures written by Seshadri Subbanna and published by . This book was released on 1989 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon

Download or read book The Molecular Beam Epitaxial Growth and Characterization of Gallium Arsenide on Silicon written by David Andrew Woolf and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures

Download or read book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates

Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book ERDA Energy Research Abstracts

Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1989 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Molecular Beam Epitaxial Growth and Electrical Characterization of Germanium on gallium Arsenide and Gallium Arsenide on germanium Heterojunctions

Download or read book Molecular Beam Epitaxial Growth and Electrical Characterization of Germanium on gallium Arsenide and Gallium Arsenide on germanium Heterojunctions written by Gerard John Sullivan and published by . This book was released on 1983 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth  Characterization  and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy

Download or read book Growth Characterization and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dissertation Abstracts International

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF STRAINED INDIUM GALLIUM ARSENSIDE GALLIUM ARSENIDE HETEROSTRUCTURES  INDIUM GALLIUM ARSENIDE GALLIUM ARSENIDE  ARSENIDE

Download or read book MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF STRAINED INDIUM GALLIUM ARSENSIDE GALLIUM ARSENIDE HETEROSTRUCTURES INDIUM GALLIUM ARSENIDE GALLIUM ARSENIDE ARSENIDE written by KEVIN HANN CHANG and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: even other mismatched substrates.