Download or read book Growth and Characterization of InAs Quantum Dots Prepared by Low pressure Metal organic Vapor Phase Epitaxy Using N2 as Carrier Gas written by Hui Wang (Ph. D.) and published by . This book was released on 2004 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP Letters written by and published by . This book was released on 1995 with total page 846 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1992 with total page 1228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optimization and Characterization of Indium Arsenide Quantum Dots for Application in III V Material Solar Cells written by Adam M. Podell and published by . This book was released on 2014 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: "In this work, InAs quantum dots grown by organometallic vapor-phase epitaxy (OMVPE) are investigated for application in III-V material solar cells. The first focus is on the optimization of growth parameters to produce high densities of uniform defect-free quantum dots via growth on 2" vicinal GaAs substrates. Parameters studied are InAs coverage, V/III ratio and growth rate. QDs are grown by the Stranski-Krastanov (SK) growth mode on (100) GaAs substrates misoriented toward (110) or (111) planes with various degrees of misorientation from 0° to 6°. Atomic force microscopy results indicated that as misorientation angle increased toward (110), critical thickness for quantum dot formation increased with [theta][subscript c] = 1.8 ML, 1.9 ML and 2.0 ML corresponding to 0°, 2° and 6°, respectively. Results for quantum dots grown on (111) misoriented substrates indicated, on average, that higher densities of quantum dots were achieved, compared with similar growths on substrates misoriented toward (110). Most notably, a stable average number density of 8 x 1010 cm−2 was observed over a range of growth rates of 0.1 ML/s - 0.4 ML/s on (111) misoriented substrates compared with a decreasing number density as low as 2.85 x 1010 cm−2 corresponding to a growth rate of 0.4 ML/s grown on (110) misoriented substrates. p-i-n solar cell devices with a 10-layer quantum dot superlattice imbedded in the i-region were also grown on (100) GaAs substrates misoriented 0°, 2° and 6° toward (110) as well as a set of devices grown on substrates misoriented toward (111). Device results showed a 1.0mA/cm2 enhancement to the short-circuit current for a 2° misoriented device with 2.2 ML InAs coverage per quantum dot layer. Spectral response measurements were performed and integrated spectral response showed sub-GaAs bandgap short-circuit contribution which increased with increasing InAs coverage in the quantum dot layers from 0.04mA/cm2/ML and 0.19mA/cm2/ML corresponding to 0°, 2° and 6° misorientation, respectively.""--Abstract.
Download or read book Journal of Physics written by and published by . This book was released on 2005 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Self assembled Al GaInN Quantum Dots Grown by Metalorganic Vapor Phase Epitaxy written by Victoria Pérez-Solórzano Borragán and published by . This book was released on 2008 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Mechanisms Governing the Growth of Self assembled Quantum Dots written by Bruno J. Riel and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We produced self-assembled quantum dot (QD) samples of InAs on GaAs by molecular beam epitaxy (MBE). With these, we explored growth effects as a function of InAs coverage for three arsenic pressures, and as a function of arsenic pressure at a specific InAs coverage. During growth, the samples were studied using reflection high energy electron diffraction (RHEED). These RHEED measurements were compared to low energy electron diffraction (LEED) measurements. To perform this ex-situ LEED characterisation, some samples were covered with an amorphous arsenic cap. This cap was thermally evaporated producing a clean, non-oxidised surface that was studied using LEED. We obtained non-ambiguous identification of the GaAs (001) surface reconstructions as well as timing information for the 2D to 3D transition during the growth of InAs on GaAs. Post growth characterisation of two sets of self-assembled QD samples, twelve samples in all, revealed the following: As a function of increasing the arsenic pressure used in QD growth, the photoluminescence (PL) of capped QDs is first redshifted at low arsenic pressures, and then blueshifted at high arsenic pressures. Scanning electron microscopy and atomic force microscopy of uncapped QDs show that as the arsenic pressure increases, the QD density increases while the average QD width and height decrease monotonically; these trends are consistent with the shift in PL for the high arsenic pressure samples, but are inconsistent with the shift in PL for the low pressure samples. This leads us to proposing a mechanism by which QDs may be modified as they are overgrown with capping material. We discuss the effects of adjusting the arsenic pressure on the formation of QDs and the mechanism by which QDs may be modified during capping.
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Download or read book Growth and Characterization of Low Density InAs GaAs Quantum Dots for Quantum Information Processes written by and published by . This book was released on 2007 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
