Download or read book Growth and Characterization of III V Semiconductor Materials for MOCVD Reactor Qualification and Process Control written by Kevin P. Bassett and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
Download or read book III V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Download or read book The Growth and Characterization of III V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition written by Pamela Kay York and published by . This book was released on 1990 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of III V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices written by Donald W. Schulte and published by . This book was released on 1995 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterisation of III V Semiconductor Materials Grown Primarily by AME and PA MBE written by Lucy Elizabeth Goff and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of III V Compound Semiconductors written by Jeremy M. Milikow and published by . This book was released on 1997 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of III V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors written by Michael Patrick Mack and published by . This book was released on 1993 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Novel III V Semiconductor Heterostructures written by Douglas Collins and published by . This book was released on 1994 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Structural Characterisation of Novel III V Semiconductor Materials written by Jacqueline Lesley Hall and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes the growth and characterisation of four different III-V semiconductor materials. Growth was primarily performed by molecular beam epitaxy, while characterisation, which was largely structural, was carried out mainly using X-ray difraction and atomic force microscopy. Growth of low temperature(LT)GaAs was undertaken to investigate whether a phase transition accompanies the structural transition which occurs when GaAs is grown at temperatures below ~ 150C. It was found however, that LT GaAs remains zinc-blende, albeit with a signicant degree of disorder. Migration enhanced epitaxy was subsequently used to grow LT GaAs, resulting in single crystalline GaAs at growth temperatures down to 115C. The possibility of using AlN as a source for nitrogen, in the growth of GaAs based dilute nitrides was explored. No conclusive evidence has been presented to suggest that small amounts of nitrogen were incorporated into the GaAs lattice. The potential for ScN to be used as a buffer layer/interlayer to reduce the defect density in cubic GaN (c-GaN) was investigated. It was found that ScN grows on c-GaN(0 0 1)/GaAs(0 0 1) in a (1 1 1) orientation, leading to overgrowth of GaN occurring in the hexagonal phase. If the ScN interlayer was sufficiently thin (3nm), then overgrowth of GaN was cubic, but no evidence of a reduction in stacking fault density was observed. Growth of ScN on GaAs(0 0 1) was also found to result mainly in a (1 1 1) orientation, but films were of poor quality. Growth of ScN on ScAs(0 0 1) was subsequently explored. ScN was found to grow in a (0 0 1) orientation, with both smoother surfaces and improved material quality than ScN(1 1 1). Growth of GaN atop ScN(0 0 1) was found to be c-GaN(0 0 1), but insuffcient studies have been carried out to determine the effect on material quality. During the growth of InGaN, it was found that unmounted substrates lead to large temperatures rises (100C) for In rich compositions. Modelling heat absorption due to bandgap, phonon and plasmon absorption showed that this is due primarily to the large number of free carriers and not to the narrow bandgap (wrt substrate). The preliminary doping of In0.8Ga0.2N with Mn was investigated. The amount of Mn that can be incorporated without causing a signicant reduction in film quality was found to increase with decreasing growth temperature.
Download or read book III V Semiconductors written by Herbert C. Freyhardt and published by Springer. This book was released on 2011-11-15 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Download or read book Growth and Characterization of III V Semiconductors with Rare Earth Impurities for Optoelectronic Devices written by and published by . This book was released on 1993 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOCVD Growth and Characterisation of III nitride Semiconductors Heterostructures and Devices written by Sergei Stepanov and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOCVD Growth and Characterisation of III nitride Semiconductors Heterostructures and Devices written by Sergei Stepanov and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOVPE Growth and Characterization of Low dimensional III V Semiconductor Structures written by Niclas Carlsson and published by . This book was released on 1998 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of III V Compound Semiconductor Device Materials written by D. C. Reynolds and published by . This book was released on 1980 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this task has been the electrical, optical, and magneto-optical characterization of the intrinsic and extrinsic properties of compound semiconductors, primarily from the III-V group of materials. Photoluminescent techniques were used to identify both the intrinsic and extrinsic properties of the materials. Intrinsic properties such as energy band gaps, effective mass parameters, refractive indices, dielectric functions, exciton binding energies and lattice vibration frequencies were determined. Extrinsic properties including activation energies of foreign impurities, binding energy of excitons to foreign impurities and the energies of complexes were established. Transport measurements were used to measure carrier mobilities and electrical conductivity as well as carrier concentrations. These measurements as a function of temperature make it possible to determine the number of donors (N sub D) and the number of acceptors (N sub A) and therefore the compensation ratio in the material. Local vibrational mode spectroscopy was used as a characterization tool to identify specific impurities such as C and Si in GaAs. From the vibrational energy the site location of the impurity can be determined. These characterization techniques have been very successful in evaluating the quality of materials and have been very helpful to the crystal growing program which has been successful in growing very high quality materials. (Author).
Download or read book Compound Semiconductor written by and published by . This book was released on 2004 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
