Download or read book Growth and Characterization of GaInAsP on GaAs Using Flow Modulation Epitaxy written by Bobby Lee Pitts and published by . This book was released on 1994 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth and Characterization of GaAs AlGaAs and Their Heterostructures by Organometallic Vapor Phase Epitaxy written by James Richard Shealy and published by . This book was released on 1983 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide phosphide Interfaces written by David Todd Emerson and published by . This book was released on 1997 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in the OMVPE Growth of InGaP GaAs P Heterostructures for Optical and Electronic Devices written by Keith Laurence Whittingham and published by . This book was released on 1995 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of GaAs based Type II GaIn As Ga AsSb GaIn As W quantum Well Heterostructures and Lasers written by Christian Fuchs and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The MOCVD Challenge written by Manijeh Razeghi and published by CRC Press. This book was released on 1995-01-01 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Download or read book Growth and Characterization of GaAs Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy written by Peter Sheldon and published by . This book was released on 1986 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Successful Molecular Beam Epitaxy Growth and Characterization of 110 GaAs GaAs and 110 AlGaAs GaAs written by Lisa Parechanian Allen and published by . This book was released on 1987 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of GaAs Al Ga As and GaAs Al Ga as Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy on the 211 Orientation of GaAs written by Seshadri Subbanna and published by . This book was released on 1985 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy written by Joseph Allen Smart and published by . This book was released on 2006 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strain Relief Misfit Dislocation Propagation and Passivation of Misfit Dislocation Traps in Lattice Mismatched Compound Semiconductor Epitaxial Layers written by Michael Joseph Matragrano and published by . This book was released on 1995 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of GaAs on Spinel written by Chih-Chun Wang and published by . This book was released on 1971 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on the epitaxial growth and characterization of GaAs on magnesium aluminate spinel has been carried out. Single crystal GaAs films (unintentionally doped) with thicknesses up to 70 micrometers have been grown on a spinel substrate using the vapor phase reaction between (CH3)3Ga and AsH3. The effect of growth conditions on the layer characteristics has been studied in order to achieve optimization of the film properties. Growth parameters studied include substrate orientation, substrate surface preparation, growth temperature, gas flow conditions, reactor geometry, and source material purification. The purity of the source material has been found to play a critically important role in determining both the crystallinity and the electrical properties of the films. Films with electron and hold mobilities up to, respectively, 4000 and 300 sq cm/V-sec have been prepared. Epitaxial growth of GaAs on GaAs/spinel composite using vapor phase and liquid phase techniques was explored with encouraging results. The epitaxial GaAs-spinel composites have been characterized by x-ray diffraction, electron diffraction, electron microscopy, and optical techniques. Information on the crystalline perfection, epitaxial orientation relationships, surface structures, and optical constants has been obtained. The overall single crystalline GaAs deposits are composed of crystallites which are misoriented by plus or minus 0.1 degree from the nominal orientation of the layer. The stress in the epitaxial GaAs was determined to be 1x10 to the 9th power dyne/sq cm. (Author).
Download or read book Growth and Characterization of Epitaxial Metastable GaAs 1 X Si2 X Alloys and GaAs 1 x Si2 X written by Din-How Mei and published by . This book was released on 1991 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Liquid Phase Epitaxial LPE GaAs Layers written by Robindra Dat and published by . This book was released on 1979 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of In 1 x Ga x As y P 1 y and GaAs Using Molecular Beam Epitaxy written by G. D. Holah and published by . This book was released on 1982 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the technical accomplishments of a two-year basic research program directed towards a study of GaAs and the quaternary III-V alloy system, In(1-x)Ga(x)As(y)P(1-y), grown by molecular beam epitaxy (MBE). Layers suitable for application of these materials, together with related binary and ternary systems, to microwave, millimeter and optical devices were targeted. Doping profiles in GaAs which are difficult to produce by techniques other than MBE and which potentially offer enhanced characteristics for specific GaAs microwave and millimeter wave devices have been produced. InAs layers grown on InGaAs buffer layers have exhibited electron mobilities exceeding 30,000 cm(2)V( -1)s( -1) at 77 deg K. InP layers have been grown and analyzed using photoluminescence which demonstrated the existence of iron out-diffusion from the Fe-doped InP substrate. InGaAs layers grown in a heterostructure FET system showed an improvement in electron mobilities over those of GaAs FETs grown under similar conditions.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1994 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of the Epitaxial CoGa Metal Contact on GaAs by Molecular Beam Epitaxy written by Tsung-Chia Kuo and published by . This book was released on 1993 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
