Download or read book Growth and Characterization of GaAs Ge Epilayers Grown on Si Substrates by Molecular Beam Epitaxy written by Peter Sheldon and published by . This book was released on 1986 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 1398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Si Ge Structures Grown by Molecular Beam Epitaxy written by Robert Michael Ostrom and published by . This book was released on 1989 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solar Energy Update written by and published by . This book was released on 1986 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Download or read book Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs written by Ri-an Zhao and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Residual Strain in GaAs Epitaxial Layers Grown in Si Substrates by Molecular Beam Epitaxy written by Hyunchul Sohn and published by . This book was released on 1993 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxial Growth of GaAs on Ge Substrates for Future Photonic Device Application written by and published by . This book was released on 2010 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs is grown on Ge substrates by Molecular Beam Epitaxy (MBE) based on the fact that GaAs and Ge are lattice-matched materials. However, GaAs is a III-V compound semiconductor. When GaAs is grown on group IV Ge substrates, the anti-phase domain (APD) occurs due to randomness of group III and group V atoms grown as the first atomic layer at different seeding positions on Ge substrates. We investigate the growth conditions to obtain the large domains of GaAs epitaxial layer on Ge substrates. Migration-enhanced epitaxy (MEE) is used in our growth process. InAs QDs are grown on GaAs/Ge substrates having anti-phase domains (APDs). InAs QDs align in the specific crystallographic direction for each domain. The morphology of GaAs on Ge substrates is observed by atomic force microscopy (AFM). Large domain size of GaAs can be obtained by varying the GaAs thickness. TEM images of GaAs on Ge samples are also investigated. The defects at the domain interfaces are observed. The crystal quailty of GaAs is studied by X-ray diffraction (XRD) method. Ohmic contacts and Schottky contacts to GaAs on Ge samples are prepared by the thermal evaporation. The I-V characteristics of the samples are measured showing resistive combined materials while another samples act as a photodetector. Photoconductivity measurements of GaAs on Ge samples are conducted to study their spectral responses. Photoluminescence (PL) of GaAs grown on Ge substrates is investigated. PL result does not show any emission peaks from InAs QDs.

Download or read book Successful Molecular Beam Epitaxy Growth and Characterization of 110 GaAs GaAs and 110 AlGaAs GaAs written by Lisa Parechanian Allen and published by . This book was released on 1987 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy written by Henry Po-Heng Lee and published by . This book was released on 1989 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two Dimensional Nanostructures for Energy Related Applications written by Kuan Yew Cheong and published by CRC Press. This book was released on 2017-03-27 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edited book focuses on the latest advances and development of utilizing two-dimensional nanostructures for energy and its related applications. Traditionally, the geometry of this material refers to "thin film" or "coating." The book covers three main parts, beginning with synthesis, processing, and property of two-dimensional nanostructures for active and passive layers followed by topics on characterization of the materials. It concludes with topics relating to utilization of the materials for usage in devises for energy and its related applications.

Download or read book Growth and Characterization of In 1 x Ga x As y P 1 y and GaAs Using Molecular Beam Epitaxy written by D. W. Covington and published by . This book was released on 1980 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the technical work accomplished during the first year of a two-year study of binary and quaternary semiconductors grown by molecular beam epitaxy. Research on GaAs materials demonstrated doping profiles for peeled film, mixer diodes and low-high-low, millimeter wave IMPATT diodes. Iron has been investigated as a potential MBE dopant for FET buffer layer applications. Although compensated layers exhibiting the Fe(2+) line at 0.371 eV were obtained for doping oven temperatures less than but close to 1013 C at GaAs growth rates of 1.0 micron per hr. there was unintentional accumulation of iron at the outer surface reserved for the active layer in conventional FET structures. Before initiating the study of quaternary materials, the MBE growth conditions were established for the ternary In(x)Ga(1-x)As. Layers of the latter semiconductor grown on GaAs substrates held at 510 C showed significant changes in surface morphology and electrical properties for x greater than but close to 0.3. A cryopumped MBE system containing six oven positions has been developed for growing the quaternary In(1-x)Ga(x)As(y)P(1-y) which requires relatively intense beams of P molecules. Lattice-matched In(1-x)Ga(x)As(y)P(1-y) layers have been deposited in this system on (001) GaAs substrates using ovens loaded with Ga, In, As, and GaP. Epitaxy was achieved.

Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Physics and Applications of Semiconductor Quantum Structures written by T. Yao and published by CRC Press. This book was released on 2001-01-01 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by international experts, Physics and Applications of Semiconductor Quantum Structures covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication and characterization techniques, transport, optical, and spin-depende

Download or read book Microstructural Investigation of Defects in Epitaxial GaAs Grown on Mismatched Ge and SiGe Si Substrates written by Boeckl John J. and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback from these characterizations, optimized growth methods are established, demonstrating the ability to grow defect-free epitaxial GaAs films on Ge substrates. We also present data on the electrical activity associated with defects that result if the growth is not fully controlled. In theses studies we exploit a novel use of an electron beam induced current (EBIC) technique to show the electrical activity associated with anti-phase domains and inter-diffusion from regions as small as 100 nm. Integrating this GaAs MBE nucleation methodology on the SiGe graded substrates we show that the GaAs stoichiometry and material properties transfer without degradation from the higher threading dislocation density of the SiGe substrates. In these studies we show that fundamental defects such as; threading dislocation, anti-phase domains, and atomic inter-diffusion are controlled to a level that enables growth of extremely high quality GaAs device layers. Combined with the low TDD enabled by the SiGe graded buffer, record GaAs/Si minority carrier lifetimes in excess of 10 ns have been achieved. However, other larger scale defects are shown to have a limiting effect on large area device performance. One such morphological surface defect, known as the "bat", is generated during the UHVCVD SiGe growth. The defect was comprehensively studied and results indicate that the impact on GaAs device performance was due to dislocation clusters in MBE device layers. Comparison analysis with GaAs overgrowth via metal organic chemical vapor deposition (MOCVD) demonstrated this growth method produced fully-operational large-area device structure. A model relating surface growth rates to an incomplete lattice-mismatch relaxation predicts the formation of these clusters. While challenges remain for monolithic III/V optoelectronic integration on Si, it is clear that the demonstration of successful GaAs nucleation on the SiGe substrate represents a significant milestone on the path to the final goal of truly integrated III-V devices with Si integrated circuits.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt: