Download or read book Ge Photodetectors for Si Microphotonics written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: By Hsin-Chiao Luan.
Download or read book Ge Photodetectors for Si Microphotonics written by Luan Hsin-Chiao and published by . This book was released on 2001 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Alloys for Photovoltaic Applications written by Ammar Nayfeh and published by Elsevier. This book was released on 2023-03-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification. - Includes a summary of SiGe alloys material properties relevant for solar research, all compiled at one place - Presents various simulation models and analysis of SiGe material properties on solar cell performance - Includes a cost-analysis for III-V/Si solar cells via SiGe alloys
Download or read book Planar Ge Photodetectors on Si Substrates for Si Ge based Optical Receivers written by Jungwoo Oh and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon based Microphotonics from Basics to Applications written by Società italiana di fisica and published by IOS Press. This book was released on 1999 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of Si-based optoelectronics has been extremely fast in the last few years and it is predicted that this growth will still continue in the near future. The aim of the volume is to present different Si-based luminescing materials as porous silicon, rare-earth doped silicon, Si nanocrystals, silicides, Si-based multilayers and silicon-germanium alloy or superlattice structures. The different devices needed for an all-Si-based optoelectronics are treated, ranging from light sources to waveguides, from amplifiers and modulators to detectors. Both the very basic treatments as well as applications to real prototype devices and integration in an optical integrated circuit are presented. Several issues are highlighted: the problem of electrical transport in low-dimensional Si systems, the possibility of gain in Si-based systems, the low modulation speed of Si-based LEDs. The book gives a fascinating picture of the state-of-the-art in Si microphotonics and a perspective on what one can expect in the near future.
Download or read book Silicon Photonics written by Lorenzo Pavesi and published by Springer Science & Business Media. This book was released on 2004-03-04 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.
Download or read book Light Emitting Silicon for Microphotonics written by Stefano Ossicini and published by Springer Science & Business Media. This book was released on 2003-11-12 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: A fascinating insight into the state-of-the-art in silicon microphotonics and on what we can expect in the near future. The book presents an overview of the current understanding of getting light from silicon. It concentrates mainly on low dimensional silicon structures, like quantum dots, wires and wells, but covers also alternative approaches like porous silicon and the doping of silicon with rare-earths. The emphasis is on the experimental and theoretical achievements concerning the optoelectronic properties of confined silicon structures obtained during recent years. Silicon based photonic crystals are in particular considered. An in depth discussion of the route towards a silicon laser is presented.
Download or read book Microphotonics Materials Physics and Applications Volume 637 written by Kazumi Wada and published by . This book was released on 2001-09-20 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book SiGe Ge and Related Compounds 3 Materials Processing and Devices written by David Harame and published by The Electrochemical Society. This book was released on 2008 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Download or read book High performance Germanium Photodetectors on Silicon Reflecting Substrates for Long haul Optical Communications written by Olufemi Isiade Dosunmu and published by . This book was released on 2005 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this work we have designed and fabricated resonant cavity enhanced (RCE) germanium-on-silicon (Ge-on-Si) photodetectors, operating around the 1550 nm wavelength for applications in long-haul communications. Without sacrificing bandwidth, the spectral response of the Ge photodetector is enhanced by fabricating the Ge detector within a Fabry-Perot cavity, where the Ge active region is grown atop one or two-period silicon-on-insulator (SOI) substrates designed for maximum reflectivity (>80%) in the 1300 nm-1600 nm wavelength range. The responsivity of these Ge/SOI RCE photodetectors around 1550 nm is further enhanced by the increased absorption coefficient due to the tensile strain-induced bandgap narrowing effect within the Ge film. Detector bandwidths approaching 13 GHz and quantum efficiencies of nearly 60% have been measured around 1550 nm, which demonstrates the compatibility of these Ge/SOI photodetectors with 10 Gb/s data communication systems. In addition, the measured full-width at half-maximum (FWHM) of the spectral resonant peak is approximately 50 nm, encompassing the entire C-band wavelength range (1528 nm-1565 nm) used in long-haul optical communications, making these high-speed Ge detectors ideal for integration with WDM-based telecommunication systems. To the author's knowledge, these detectors are the fastest, most efficient Ge photodetectors fabricated directly on Si and optimized for 1550 nm operation.
Download or read book Design Optimization of Ge on Si Photodetector written by Himadri Sekhar Dutta and published by LAP Lambert Academic Publishing. This book was released on 2014-03 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But, the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD), given its smaller direct energy band-gap, and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branc
Download or read book Strain engineered Complementary Metal Oxide Semiconductor compatible Ge Photodetectors written by Douglas Dale Cannon and published by . This book was released on 2003 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of CMOS-compatible photodetectors capable of operating throughout the entire telecommunications wavelength spectrum will aid in the integration of photodetectors with Si microelectronics, thus offering a low cost platform for high performance photoreceivers. This thesis demonstrates the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 [mu]m wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6[mu]m. Design rules are given for high speed and high responsivity, and the advantages of waveguide integration for simultaneous achievement of high speed and high responsivity are illustrated. It is shown that waveguide integration has advantages to vertical illumination when optical saturation is considered. Optical saturation will become important as photodetector sizes shrink to the order of a few tens of microns in diameter. High Ge content SiGe could have applications for a SiGe electro-optic modulator utilizing the Franz-Keldysh effect. High Ge content SiGe films have been grown on Si substrates. The Franz-Keldysh effect has been observed in our pure Ge films as an increase in responsivity with increasing reverse bias for wavelengths longer than the bandgap energy.
Download or read book Optical Interconnects written by Lorenzo Pavesi and published by Springer. This book was released on 2007-05-17 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical Interconnects provides a fascinating picture of the state of the art in optical interconnects and a perspective on what can be expected in the near future. It is composed of selected reviews authored by world leaders in the field, and these reviews are written from either an academic or industrial viewpoint. An in-depth discussion of the path towards fully-integrated optical interconnects in microelectronics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microelectronics and optoelectronics.
Download or read book Silicon Germanium SiGe Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Download or read book Towards the First Silicon Laser written by Lorenzo Pavesi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.
Download or read book Optical Properties of Si and Ge Schottky Barrier Photodetectors and Light Waveguides written by Matti Leppihalme and published by . This book was released on 1978 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-05-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.
