Download or read book GaP Heteroepitaxy on Si 100 written by Henning Döscher and published by Springer Science & Business Media. This book was released on 2013-11-29 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Download or read book Gap Heteroepitaxy on Si 100 written by Henning Doscher and published by . This book was released on 2013-12-31 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Controlling Si 111 and Si 100 Surfaces for Subsequent GaP Heteroepitaxy in CVD Ambient written by Agnieszka Paszuk and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Die Integration von III-V-Unterzellen auf einem kostengünstigen aktiven Si-Substrat hat das Potential, Mehrfach-Solarzellen mit einem hohen Konversionswirkungsgrad zu ermöglichen. Das Wachstum von III-V-Materialien mit niedriger Defektdichte auf Si ist schwierig aufgrund der unterschiedlichen Kristallstrukturen. Dank der geringen Gitterfehlanpassung kann eine GaP Nukleationsschicht, die auf dem Si Substrat aufgewachsen wird, den Übergang von Si zu anderen III-V Materialien erleichtern. Solche pseudomorphen GaP/Si-Quasisubstrate ermöglichen die anschließende Integration planarer oder Nanodraht (ND)-basierter III-V-Strukturen. Die planaren Strukturen werden für gewöhnlich in [100]-Orientierung gewachsen, wohingegen ND-Strukturen bevorzugt entlang der [111]-Richtung wachsen. Die vorliegende Arbeit untersucht die Präparation der Si Unterzelle und der pseudomorphen GaP/Si Quasisubstrate mittels metallorganischer chemischer Gasphasenabscheidung (MOCVD). Auf der Si(100) Oberfläche verursachen Einfachstufen beim heteroepitaktischen Wachstum von III-V-Schichten die Entstehung von Antiphasendomänen, wohingegen bei Si(111)-Substraten die Kontrolle der Polarität der GaP-Schichten entscheidend ist, um das senkrechte Wachstum von ND zu erreichen. MOCVD-Wachstumsprozesse sind sehr komplex aufgrund der Anwesenheit von metallorganischen Ausgangsstoffen, des Prozessgases (H2), welches einen starken Einfluss auf die Stufenformation des Si hat, und wegen des allgegenwertigen Wechselspiels zwischen energetischen und kinetischen Prozessen. Um die präzise Präparation der Si-Oberfläche kontrollieren zu können verwenden wir in situ Reflexions-Anisotropie-Spektroskopie (RAS) und korrelieren Signale, welche an entscheidenden Prozessschritten auftreten, mit Ultrahochvakuum (UHV)-basierten Oberflächen-empfindlichen Methoden. Beide Si-Oberflächen wechselwirken stark mit dem H2-Prozessgas, was zu einer Terminierung der Oberflächen mit Monohydrid führt. Der Kollektor in Si(100) und Si(111) wird durch Tempern unter TBP oder TBAs Precursor gebildet, welches zu einer Diffusion von P oder As in Si führt. Nach der Kollektor-Bildung weiteres Tempern in H2 ist notwendig, um für die GaP Nukleation wieder eine glatte Oberfläche (epiready) zu generieren. Um GaP(111) mit B-Typ-Polarität zu erzielen, was für vertikales III-V ND-Wachstum notwendig ist, ist eine Modifizierung der H-terminierten Si-Oberfläche nötig. Durch eine gezielte Terminierung der Si-Oberfläche mit As oder H2 lässt sich die Polarität des GaP-Films kontrollieren. Im Falle von Si(100) 6° kann mittels in situ RAS die Dimer-Ausrichtung der Majoritätsdomäne auf der Oberfläche in Abhängigkeit der As-Quelle (Asx oder TBAs) und der Abkühlprozedur kontrolliert werden. Dies erlaubt die gezielte Einstellung der Untergitterausrichtung der nachfolgend gewachsenen, eindomänigen GaP/Si(100)-Schicht. Somit können sowohl für planare als auch für ND-basierte photovoltaische Mehrfachabsorber-Strukturen geeignete GaP/Si Quasisubstrate mit wohldefinierten Grenzflächen und einem p-n-Übergang im Si kontrolliert in der MOCVD präpariert werden.

Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty Eighth State of the Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heteroepitaxial Semiconductors for Electronic Devices written by G.W. Cullen and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

Download or read book Proceedings of the Sixth International Conference on Chemical Vapor Deposition 1977 written by Lee F. Donaghey and published by . This book was released on 1977 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Download or read book In Situ Real Time Characterization of Thin Films written by Orlando Auciello and published by John Wiley & Sons. This book was released on 2001 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application

Download or read book Nanoscale Semiconductor Lasers written by Cunzhu Tong and published by Elsevier. This book was released on 2019-08-06 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies. Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications Demonstrates how to connect different classes of material to specific applications Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.

Download or read book Thin Films written by W. K. Liu and published by World Scientific. This book was released on 1999 with total page 708 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

Download or read book Semiconductor Nanodevices written by David Ritchie and published by Elsevier. This book was released on 2021-10-24 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanodevices: Physics, Technology and Applications explores recent advances in the field. The behaviour of these devices is controlled by regions of nanoscale dimensions which typically determine the local density of electronic states and lead to the observation of a range of quantum effects with significant potential for exploitation. The book opens with an introduction describing the development of this research field over the past few decades which contrasts quantum-controlled devices to conventional nanoscale electronic devices where an emphasis has often been placed on minimising quantum effects. This introduction is followed by seven chapters describing electrical nanodevices and five chapters describing opto-electronic nanodevices; individual chapters review important recent advances. These chapters include specific fabrication details for the structures and devices described as well as a discussion of the physics made accessible. It is an important reference source for physicists, materials scientists and engineers who want to learn more about how semiconductor-based nanodevices are being developed for both science and potential industrial applications. The section on electrical devices includes chapters describing the study of electron correlation effects using transport in quantum point contacts and tunnelling between one-dimensional wires; the high-frequency pumping of single electrons; thermal effects in quantum dots; the use of silicon quantum dot devices for qubits and quantum computing; transport in topological insulator nanoribbons and a comprehensive discussion of noise in electrical nanodevices. The optical device section describes the use of self-assembled III-V semiconductor nanostructures embedded in devices for a range of applications, including quantum dots for single and entangled photon sources, quantum dots and nanowires in lasers and quantum dots in solar cells. Explores the major industrial applications of semiconductor nanodevices Explains fabrication techniques for the production of semiconductor nanodevices Assesses the challenges for the mass production of semiconductor nanodevices

Download or read book Heterostructures on Silicon One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Download or read book Wide Band Gap Semiconductors Volume 242 written by T. D. Moustakas and published by . This book was released on 1992-07-15 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book III Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer. This book was released on 2017-05-18 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.

Download or read book Heavy Metals Advances in Research and Application 2012 Edition written by and published by ScholarlyEditions. This book was released on 2012-12-26 with total page 1112 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heavy Metals—Advances in Research and Application: 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Heavy Metals. The editors have built Heavy Metals—Advances in Research and Application: 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Heavy Metals in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Heavy Metals—Advances in Research and Application: 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.