Download or read book GaN HEMT Modeling and Design for Millimeter and Sub millimeter Wave Power Amplifiers Through Monte Carlo Particle based Device Simulations written by Diego Guerra and published by . This book was released on 2011 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.

Download or read book Gan Hemt Modeling and Design for Mm and Sub Mm Wave Power Amplifiers written by Diego Guerra and published by LAP Lambert Academic Publishing. This book was released on 2012-02 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.

Download or read book Millimeter Wave Power Amplifiers written by Jaco du Preez and published by Springer. This book was released on 2017-10-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

Download or read book mm Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.

Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

Download or read book Millimeter Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Download or read book Design of Millimeter Wave Power Amplifiers in Gallium Nitride High Electron Mobility Transistor Technology written by Maciej Cwiklinski and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of High Efficiency Millimeter Wave Power Amplifiers and Simulation and Measurement of Digitally Modulated Signal written by 林容麟 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Download or read book Physical Foundations of the Millimeter and Submillimeter Waves Technique V 2 written by V. P. Ščestopalov and published by VSP. This book was released on 1997-08 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The developments in physics, biology and astronomy, as well as radar and communication technology, remote sensing and spectroscopy have led to a sharp increase in the investigations of electromagnetic millimeter and submillimeter waves with the lengths 10--1 and 1--0.1 mm. These volumes reflect the results of extensive research in this field and attempt to destroy stereotypes established during the long years of large-scale modeling in the millimeter and submillimeter wavelength ranges and to develop new concepts. The first volume (Open Structures) deals with the results of theoretical and experimental studies of open electrodynamic structures (open waveguides, open resonators, diffractional gratings) allowing the determination of the characteristics of various devices used in millimeter and submillimeter technology. The second volume (Sources. Element Base. Radio Systems: Novel Scientific Trends) presents the problems of creating independent units and radiosystems of the millimeter and submillimeter wavelength ranges and the justification of their physical operating principles. This includes the mechanism of generating volume waves by electron flows moving close to a grating, excitation of fields in open resonators and waveguides with inclusion, and other phenomena.

Download or read book Design of Silicon Power Ampliers and Arrays for Millimeter Wave Applications written by Bassel Hanafi and published by . This book was released on 2014 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: With emerging millimeter wave applications including automotive radars, wireless transmission of high-definition content, and possibly 5G mobile communications, low cost and high performance power amplifiers are key for enabling a commercial mass market. Silicon technologies offer cost advantages but typically suffer from low breakdown voltage and low Q passive elements yielding low power density and low efficiency. This thesis presents millimeter wave power amplifiers implemented in main stream silicon technologies. The task of obtaining large output power from low breakdown silicon devices is addressed by the use of stacking and power combining techniques. The design of a Q-band amplifier implemented in IBM 0.13um SiGe HBT process featuring on-chip corporate combining is first described. Stacking of bipolar transistors is introduced, together with novel low impedance biasing circuits to enable high breakdown voltage while extending the output swings. The fabricated amplifier delivered 24.7 dBm of maximum output power at 39 GHz, and 6.5% efficiency at 5.2 V without degradation. Alternatively, free-space combining can eliminate lossy on-chip combiners allowing for higher power and efficiency. A chip of 8 unit amplifiers implemented in 45nm CMOS SOI feeding a 2x2 array of differentially-fed patch antennas is demonstrated. With this chip, using CMOS stacking techniques, high output power (28 dBm) was achieved from a 3-stage amplifier operating at 45 GHz. When coupled to the antennas, the array provided an equivalent isotropic radiated power (EIRP) of 40 dBm (10 W), and a larger system comprising 4 chips feeding a 2x8 array was shown to deliver an EIRP of 50 dBm (100 W) at 45 GHz, while demonstrating, for the first time, a total RF power of 33 dBm which is a record in silicon at this frequency. The estimated peak PAE for both arrays are 13.5% and 10.7%, respectively. Finally, power amplifiers implemented in SOI technology can suffer from severe self-heating. The thermal behavior of CMOS SOI PAs is evaluated using 3D thermal simulations, and the effects of the back-end interconnect as well as the layout on the overall thermal resistance are discussed. The models were verified against measurements for an individual FET using the output conductance method. For a stacked-FET PA fabricated in 45nm CMOS SOI, the models reveal an excessive temperature rise of 150C for the FETs at maximum power, hence simple ideas were proposed to improve the thermal resistance of SOI circuits, with limited impact on electrical performance.

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book CMOS 60 GHz and E band Power Amplifiers and Transmitters written by Dixian Zhao and published by Springer. This book was released on 2015-07-09 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Download or read book Monte Carlo Analysis of Millimeter wave GaN Based Gunn Effect Oscillators written by Sridhara Viswanadham and published by . This book was released on 2003 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers written by Jingchang Nan and published by CRC Press. This book was released on 2021-07-30 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a summary of a series of achievements made by the authors and colleagues in the areas of radio frequency power amplifier modeling (including neural Volterra series modeling, neural network modeling, X-parameter modeling), nonlinear analysis methods, and power amplifier predistortion technology over the past 10 years. The book is organized into ten chapters, which respectively describe an overview of research of power amplifier behavioral models and predistortion technology, nonlinear characteristics of power amplifiers, power amplifier behavioral models and the basis of nonlinear analysis, an overview of power amplifier predistortion, Volterra series modeling of power amplifiers, power amplifier modeling based on neural networks, power amplifier modeling with X-parameters, the modeling of other power amplifiers, nonlinear circuit analysis methods, and predistortion algorithms and applications. Blending theory with analysis, this book will provide researchers and RF/microwave engineering students with a valuable resource.

Download or read book Monte Carlo Simulation of Millimeter wave Gunn Effect Oscillators written by Ramani Vaidyanathan and published by . This book was released on 1991 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Broadband Microwave Amplifiers written by Bal S. Virdee and published by Artech House. This book was released on 2004 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This authoritative resource offers a complete understanding of state-of-the-art and cutting-edge techniques for designing and fabricating broadband microwave amplifiers. The book covers the complete design cycle, detailing each stage in a practical, hands-on manner." "This comprehensive reference illustrates the formulation of small- and large-signal device models to help professionals accurately simulate amplifier performance, and covers all the practical aspects and circuit components used in fabrication. Engineers find design examples of various types of amplifiers that are applicable in broadband systems such as optical communications, satellite communications, spread-spectrum communications, wireless local area networks, electronic warfare, instrumentation, and phased array radar. The book also provides an in-depth treatment of ultra-broadband microwave amplifiers." --Book Jacket.