Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 3 written by and published by . This book was released on 2013 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 7 written by M. Dudley and published by The Electrochemical Society. This book was released on with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 6 written by M. Dudley and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 8 written by M. Dudley and published by The Electrochemical Society. This book was released on 2018-09-21 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by Electrochemical Society (United States). Dielectric Science and Technology Division and published by ECS Transactions. This book was released on 2011-10 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers state-of-the-art of GaN and SiC material and device technologies for power switching and power amplification applications.

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 2 written by Electrochemical Society (United States). Electronics and Photonics Division and published by . This book was released on 2012 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 12 written by M. Dudley and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 11 written by M. Dudley and published by . This book was released on 2021 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 9 written by M. Dudley and published by . This book was released on 2019 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.